PARAMETER VALUES 8200 Search Results

5SDD 54N4000

Abstract: D150 Rectifier A150 B150 C150 D150 VF150 VF25
Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85x103 0.8 0.086 Rectifier Diode V A A A V mΩ Ω 5SDD 54N4000 Doc. No. 5SYA1171-00 Dec. 03 • Patented free-floating silicon technology • Very low on-state losses • Optimum power handling capability

Contextual Info: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85x103 0.8 0.086 Rectifier Diode V A A A V 5SDD 54N4000 mW Doc. No. 5SYA1171-01 Apr. 13 • Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability

i8042

Abstract: IAM-81028 IAM-81008 I8082 i40220 I40420 AN-S013 IAM-82008 I80220 I80820
Contextual Info: AB-0013: SPICE Models for the IAM- 81 and IAM-82 Active Mixers Revised February, 1999 Introduction The IAM81 and IAM82 mixers are offered in a number of packages. IAM-81000 and IAM-82000 are chip form; IAM-81008 and IAM-82008 are SO-8 plastic packaged versions, and IAM-81028 and IAM-82028

1337GDVGI

Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 Errata Notification EN #: UEN-12-13 Issue Date: November 7, 2012 Product Affected: Contact: E-mail: Errata Revision #: N/A Effective Date: November 7, 2012

parameter values 8200

Contextual Info: SIEMENS 6-Bit A/D Converter, 300 MHz SDA 8200 Bipolar 1C Features • • • • • • • • • 300 MHz strobe frequency 5.4 effective bits /anaiog = 100 MHz ± 0.25 LSB max. linearity error ± 1 V input voltage range 12 pF input capacitance Optionally 2:1 demultiplexed output data

Contextual Info: 47E » SIEMENS • Ô B 3 5 b 0 5 QQBMTMfi b ■ SIEG S I E M EN S A K T I E N G E S E L L S C H A F T 6-Bit A/D Converter, 300 MHz SDA 8200 Bipolar 1C Features • • • • • • • • • ^ t - io - c a 300 MHz strobe frequency 5.4 effective bits fanaiog = 100 MHz

Contextual Info: DC-DC Converter Module VE-820005B Mini – 300 Vin / 28 Vout / 200 Watts Features • • • • • • • • • • • • DC input range: 180 - 450 V Input surge withstand: 525 V for 100 ms DC output: 28 V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load

of 4-pin DIP switch

Abstract: CNY64
Contextual Info: 4 PIN DIP VERY HIGH ISOLATION VOLTAGE PHOTOCOUPLER CNY64 series CNY65 series Features • High Voltage BVCEO=80V min. • Operating temperature up to +85°C • High isolation voltage between input and output Viso = 8200 Vrms • Rated recurring peak voltage (repetitive)

T3441N

Contextual Info: Technische Information / technical information Netz-Thyristor Phase Control Thyristor T3441N Key Parameters enndaten VDRM / VRRM 4800V … 5200V ITAVM 3200A TC=85°C ITSM vT0 82000A 3570A (TC=55°C) 0,764V rT 0,234mΩ RthJC 4,5K/kW Clamping Force 63 … 91kN

Contextual Info: Technische Information / technical information Netz-Thyristor Phase Control Thyristor T2851N Key Parameters enndaten VDRM / VRRM 4800V … 5200V ITAVM 2980A TC=85°C ITSM vT0 82000A 3570A (TC=55°C) 0,765V rT 0,234mΩ RthJC 5,0K/kW Clamping Force 63 … 91kN

BXL4004

Contextual Info: BXL4004 Ordering number : EN9050A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BXL4004 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=3mΩ (typ.) 4.5V drive • Input capacitance Ciss=8200pF (typ.) Specifications

Contextual Info: BXL4004 Ordering number : EN9050A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BXL4004 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=3mΩ (typ.) 4.5V drive • Input capacitance Ciss=8200pF (typ.) Specifications

XL4004

Abstract: XL400
Contextual Info: BXL4004 Ordering number : EN9050 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BXL4004 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=3mΩ (typ.) 4.5V drive • Input capacitance Ciss=8200pF (typ.) Specifications

LWQ38E

Abstract: LW Q38E
Contextual Info: 2012-09-26 CHIPLED 0603 Datasheet Version 1.0 LW Q38E Features: Besondere Merkmale: • Package: SMT package 0603, colored diffused resin • Viewing angle at 50 % IV: 150° horizontal ; 130° (vertical) • Color: Cx = 0.30, Cy = 0.28 acc. to CIE 1931 (white); CRI (typ.) = 80; CTR = 8200 K

AN005

Abstract: F010 F018 registered buffer parity
Contextual Info: Using ECC Memory Configuration and Error Injection and Detection with the Tsi107 80C2000_AN005_03 November 3, 2009 6024 Silver Creek Valley Road San Jose, California 95138 Telephone: 408 284-8200 • FAX: (408) 284-3572 Printed in U.S.A. 2009 Integrated Device Technology, Inc.

tsi108

Abstract: TSI109-200IL Tsi109 130c cap Tsi109 Device Errata JESD22-A104B BGA 1023 tsi108-200cly Tsi109-200ILY 32x32 DDR2 SDRAM circuit diagram
Contextual Info: Tsi108/Tsi109 Hardware Manual 80B5000_MA002_09 October 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc. GENERAL DISCLAIMER

DDR2 Unbuffered SO-DIMM Reference Design

Abstract: DDR2 layout guidelines TSI110 JESD22-A104B JESD22-A118 JESD22 REQ64 DDR2 sdram pcb layout guidelines DDR2 sodimm pcb layout
Contextual Info: Tsi110 Hardware Manual 80E5000_MA002_04 October 2009 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: 800 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2009 Integrated Device Technology, Inc. GENERAL DISCLAIMER

Tsi107D-100JE

Abstract: Tsi107C-100JE Tsi107D-100JEY pic 636 Tsi107 XPC107APX100LD 18ARS10534D001 Tsi107D-133LEY IDT TOP SIDE 640 PBGA package marking G38-87
Contextual Info: Tsi107 Hardware Manual 80C2000_MA002_07 November 3, 2009 6024 Silver Creek Valley Road San Jose, California 95138 Telephone: 408 284-8200 • FAX: (408) 284-3572 Printed in U.S.A. 2009 Integrated Device Technology, Inc. Titlepage GENERAL DISCLAIMER

winpath

Abstract: Wintegra wintegra winpath AN005 M66EN REQ64 WinPATH 4
Contextual Info: Interfacing the PowerSpan IITM with the Wintegra WinpathTM 80A1010_AN005_05 November 4, 2009 6024 Silver Creek Valley Road San Jose, California 95138 Telephone: 408 284-8200 • FAX: (408) 284-3572 Printed in U.S.A. 2009 Integrated Device Technology, Inc.

DM 0565

Abstract: transistor a6f
Contextual Info: IC41C82002 IC41LV82002 2M x 8 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE FEATURES DESCRIPTION • Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs • Refresh Interval: - 2,048 cycles/32 ms The 1+51 82002 Series is a 2,097,152 x 8-bit high-performance

BPW-20R

Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200

lenze d-31855 manual

Abstract: lenze EMZ8201BB manual LENZE 9300 drive manual lenze inverter manual EVF8201-E lenze inverter manual EVF8202-E LENZE 8200 vector parameters lenze EVF8202-E manual LENZE 8200 parameter list emz8201bb D-31855
Contextual Info: 490 826 Lenze Global Drive Frequency inverters 8200/9300 vector 0.37 … 90 kW Lenze Drive Systems GmbH, Postfach 10 13 52, D-31763 Hameln Site: Hans-Lenze-Straße 1, D-31855 Aerzen, Tel. +49 0 5154 82-0, Fax +49 (0) 5154 82-21 11 E-mail: Lenze@Lenze.de • Internet: http://www.Lenze.com

MT5634ZBA

Abstract: SB2400 4 digit duplex disply transistor t18 FET UPS APC 800 CIRCUIT fci dh 22 12 FMR 140 DSP BASED ONLINE UPS design TO 521 MH apc 1400 hyperterminal disable beep
Contextual Info: SocketModem MT5634SMI V.34 & V.92 AT Commands Fax Class 1 Commands Fax Class 2 Commands Voice Commands Reference Guide Copyright and Technical Support SocketModem Reference Guide Serial: MT5634SMI-34, MT5634SMI-92 Parallel: MT5634SMI-P-92 Medical Device: MT5634SMI-HV-92, MT5634SMI-P-HV-92

ch 8500

Abstract: ABB 5STP 12 press pack thyristor 8000 VDRM press pack thyristor 9000 VDRM ABB thyristor 5 5SYA2020
Contextual Info: VDRM VDSM IT AV M IT(RMS) ITSM V(T0) rT = = = = = = = 8000 8500 1200 1880 35x103 1.25 0.48 V V A A A V mΩ Phase Control Thyristor 5STP 12N8500 Doc. No. 5SYA1044-02 Nov. 04 • Patented free-floating silicon technology • Low on-state and switching losses