PARALLEL MOSFET P CHANNEL Search Results
PARALLEL MOSFET P CHANNEL Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TK065U65Z | Toshiba Electronic Devices & Storage Corporation | MOSFET, N-ch, 650 V, 38 A, 0.065 Ohm@10V, TOLL | Datasheet | ||
| TK5R1P08QM | Toshiba Electronic Devices & Storage Corporation | MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK | Datasheet | ||
| TK190E65Z | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 650 V, 0.19 Ω@10V, TO-220, DTMOSⅥ | Datasheet | ||
| TK5R1A08QM | Toshiba Electronic Devices & Storage Corporation | MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS | Datasheet | ||
| TK155E65Z | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ | Datasheet |
PARALLEL MOSFET P CHANNEL Datasheets Context Search
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Contextual Info: Data Sheet 4V Drive Pch MOSFET RSD080P05 Structure Silicon P-channel MOSFET Dimensions Unit : mm CPT3 6.5 5.1 (SC-63) <SOT-428> 2.3 2.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. |
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rsd080p05sc-63ot-428r1120a | |
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Contextual Info: Data Sheet 4V Drive Pch MOSFET RSD080P05 Structure Silicon P-channel MOSFET Dimensions Unit : mm CPT3 6.5 5.1 (SC-63) <SOT-428> 2.3 2.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. |
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rsd080p05sc-63ot-428r1120a | |
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Contextual Info: Data Sheet 4V Drive Pch MOSFET RSD140P06 Structure Silicon P-channel MOSFET Dimensions Unit : mm CPT3 6.5 5.1 (SC-63) <SOT-428> 2.3 2.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. |
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rsd140p06sc-63ot-428r1120a | |
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Contextual Info: Data Sheet 4V Drive Pch MOSFET RSD140P06 Dimensions Unit : mm Structure Silicon P-channel MOSFET CPT3 6.5 5.1 (SC-63) <SOT-428> 2.3 2.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. |
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rsd140p06sc-63ot-428r1120a | |
RSD080P05Contextual Info: Data Sheet 4V Drive Pch MOSFET RSD080P05 Dimensions Unit : mm Structure Silicon P-channel MOSFET CPT3 6.5 5.1 (SC-63) <SOT-428> 2.3 2.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. |
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rsd080p05sc-63ot-428r1120a | |
rsd160p05Contextual Info: Data Sheet 4V Drive Pch MOSFET RSD160P05 Dimensions Unit : mm Structure Silicon P-channel MOSFET CPT3 6.5 5.1 (SC-63) <SOT-428> 2.3 2.5 0.9 1.5 5.5 Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 4) Parallel use is easy. |
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rsd160p05sc-63ot-428r1120a | |
2N7002K
Abstract: RGs sot23 MOSFET P channel SOT-23 SOT-23 MARKING PW RGS-10
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2n7002kot-2302-mar-10rgs sot23+3 | |
EIGHT p-channel MOSFET ARRAYContextual Info: AP0332 8 P-Channel Latchable Power MOSFET Array Ordering Information VDD RO ON IO(ON) IO(OFF) Order Number/Package (max) (max) (min) (max) SO-16 -320V 700Ω -15mA -1.0nA AP0332CG *Average current per channel, measured with all eight channels connected in parallel. |
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ap0332-320v-15maso-16+2 | |
EIGHT MOSFET ARRAY
Abstract: ns-1a AP0332CG AP0332 high voltage piezoelectric transducer EIGHT p-channel MOSFET ARRAY
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ap0332so-16-320v-15ma+6 | |
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Contextual Info: 2SK3019T N-Channel MOSFET P b Lead Pb -Free 3 1 2 FEATURES: 1. GATE * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75) |
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2sk3019tot-523sc-7503-jun-2011 | |
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Contextual Info: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEX8P50A Features • • • • • • • • 500 Volts 8 Amps 1.2 Ω High voltage p-channel power mosfet with parallel fast switching, soft recovery fred; complements MSAFX24N50A |
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msaex8p50amsafx24n50amsc0307a | |
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Contextual Info: 2SK3019 N-Channel MOSFET P b Lead Pb -Free 3 1 2 1. GATE FEATURES: * Low on-resistance * Fast switching speed * Low voltage drive makes this device ideal for portable equipment * Easily designed drive circuits * Easy to parallel 2. SOURCE 3. DRAIN SOT-523(SC-75) |
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2sk3019ot-523sc-7503-jun-2011 | |
ID100
Abstract: MSAEX8P50A MSAFX24N50A
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msaex8p50amsafx24n50amsc0307aid100 | |
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Contextual Info: Su pertex inc. AP0332 8 P-Channel Latchable Power MOSFET Array Ordering Information Order Number/Package VDd ^O ON (max) (max) (min) (max) SO-16 Die -320V 700Q -15mA -1.0nA AP0332CG AP0332ND *0(0«) ^O(OFF) 'A verage cu rre nt p e r channel, m easured with all eigh t channels connected in parallel. |
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-320vap0332-15maso-16+2 | |
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high voltage piezoelectric transducer
Abstract: AP0332 AP0332CG AP0332ND EIGHT MOSFET ARRAY bare Die mosfet
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ap0332so-16-320v-15ma+5 | |
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Contextual Info: 2SK3541M Surface Mount N-Channel MOSFET P b Lead Pb -Free 3 1 1. Gate 2. Source 3. Drain 2 Features: * Low on-resistance * Fast switching speed * Low voltage drive(2.5V) makes this ideal for portable euqipment * Drive &ircuits &an %e 6imple * Parallel 8se ,s (asy |
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2sk3541mot-723100ma22-feb-2012 | |
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Contextual Info: Micnosemi H m m Santa Ana, CA m Progress Pow ered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEX8P50A Features • 500 Volts 8 Amps High voltage p-channel power mosfet with parallel fast switching, soft |
OCR Scan |
msaex8p50amsafx24n50amsc0307a | |
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Contextual Info: Microsemi r n m m Santa Ana, CA m Progress Powered b y Technology 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAEX8P50A Features • 500 Volts 8 Amps High voltage p-channel power mosfet with parallel fast switching, soft |
OCR Scan |
msaex8p50amsafx24n50abreak0020voc | |
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Contextual Info: Su pertex inc. AP0332 8 P-Channel Latchable Power MOSFET Array < Ordering Information Order Num ber/Package ^O ON b(OFF) (max) (max) (min) (max) SO-16 -320V 700Í2 -15mA -1 .OnA AP0332CG o o ^O(ON) *Average current per channel, measured with all eight channels connected in parallel |
OCR Scan |
ap0332so-16-320v-15ma+1 | |
EIGHT p-channel MOSFET ARRAY
Abstract: EIGHT MOSFET ARRAY AP0332 AP0332CG AP0332ND high voltage piezoelectric transducer
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ap0332so-16-320v-15ma+5 | |
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Contextual Info: AN0332 O i Supertex inc. 8 N-Channel Latchable Power MOSFET Array Ordering Information v DD Ro on> ^O(ON 1O(OFF) * (max) (max) (min) (max) SO-16 Die 320V 350 ohms 25mA 1,875nA AN0332CG AN0332ND Order Number/Package •A verage current p e r channel, m easured with all eight channels connected in parallel. |
OCR Scan |
an0332so-16875naan0332cg+2 | |
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Contextual Info: Supertexinc. AP0332 8 P-Channel Latchable Power MOSFET Array Ordering Information < o o Order Number/Package ^O ON ^O(ON) ^O(OFF) (max) (max) (min) (max) SO-16 -320V 70 0Q -15m A -1.0nA A P 0 332 C G * A ve rag e cu rre n t per chan n e l, m easured w ith all e ig h t ch an n e ls co nn e cte d in parallel. |
OCR Scan |
ap0332so-16-320v | |
48V SMPS
Abstract: smps 10w 5V ISL6144 ISL6144IR ISL6144IV ISL6144IVZA MO-220 48vdc smps circuit diagram 48v smps led driver ISL6144IVZ
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isl6144fn913148v smpssmps 10w 5v+7 | |
circuit diagram of 24V 20A SMPS
Abstract: Charge Pumps
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isl6144fn9131circuit diagram of 24v 20a smpscharge pumps | |