PACKAGE PANASONIC Search Results

PACKAGE PANASONIC

Abstract: TRANSISTORS SELECTION GUIDE
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors for T V and Monitor Display A Tentative (Package Symbol) TOP-3F =TO P-3 Type Full Package, TOP-3 Type Large Package. TO-22Q(F) =TO-22Q Type Full Pack Package. Panasonic

MIP0122SY

Abstract: MIP0123SY MIP0222 MIP0222SY MIP0125SY TOP224Y TOP222Y top223y mip0223sy mip0223
Contextual Info: Panasonic Provides several enhancements over the first generation THE SECOND GENERATION THREE TERMINAL PACKAGE INTELLIGENT POWER DEVICE SERIES FOR PWM CONVERTER Package photograph Feature • Integrated PWM controller and 700Y high voltage MOSFET in three terminal.

AN32155

Abstract: UBGA024-W-2525AEL
Contextual Info: Package Standards Total pages Page 6 2 1. Outline Drawing Unit:mm Package Code : UBGA024-W-2525AEL Body Material Br / Sb Free : Epoxy Resin Reroute Material : Cu Bump - - Established Revised : SnAgCu Exclusive use for AN32155A Semiconductor Company, Panasonic Corporation

Pressure Sensors

Contextual Info: Circuit Components Catalog Pressure sensor Built-in amplifier and compensating circuit S Package M Package New L Package P Package RoHS compliant PS-A PRESSURE SENSOR FEATURES TYPICAL APPLICATIONS 1. Contains built-in amplification and temperature compensation circuit.

AN30259A

Abstract: XBGA012-W-1316AEL RESIN molding epoxy resin BGA OUTLINE DRAWING AN3025
Contextual Info: Package Standards 1. Outline Drawing Total pages Page 6 2 Unit:mm Package Code : XBGA012-W-1316AEL Body Materia l : Br/Sb Free Epoxy resin Reroute Material : Cu Bump - - Established Revised : SnAgCu Exclusive use for AN30259A Semiconductor Company, Panasonic Corporation

Contextual Info: PS-A ADP5 Pressure sensor Built-in amplifier and compensating circuit S Package M Package L Package P Package PS-A PRESSURE SENSOR FEATURES TYPICAL APPLICATIONS 1. Contains built-in amplification and temperature compensation circuit. Circuit design and adjustment of

top224y

Abstract: MIP0222 MIP0223SY MIP0223 MIP0222SY TOP122Y MIP0122SY MIP0226SY TOP226Y MIP0225SY
Contextual Info: Panasonic Provides several enhancements over the first generation THE SECOND GENERATION THREE TERMINAL PACKAGE INTELLIGENT POWER DEVICE SERIES FOR PWM CONVERTER • ■ ■ Feature ■ Package photograph •Integrated PWM controller and 700V high voltage MOSFET in three terminal.

UN211H

Abstract: UN2211
Contextual Info: Transistors Selection Guide by Applications and Functions # Transistors with built-in Resistor (XN: 5- and 6-Pin Mini Type Package, XP: 5- and 6-Pin S-Mini Type Package) 136 Panasonic Transistors (Selection Guide by Applications and Functions) Main Characteristics

hologram unit

Abstract: HUH7801 795-820 253c
Contextual Info: Panasonic Hologram Unit HUH7801 Unit : mm Laser Unit For optical information processing • Features • Package size 4.8 X 8.2 X 2.55 mm • Package integrating laser and photodetector • No holograms ■ Application • PD ■ Absolute Maximum Ratings

Contextual Info: Panasonic Small Package Reflective Photo-interrupter Series 0N2170/2270,CNB1001/1002/2001 ,CNB2003 • ■ Features Package photograph •M iniature and thin type:2.7x3.4mm Height 1.5mm •P lastic resin to cut-off visible light is used •E asy interface to control circuit

ON2170

Abstract: optical interrupter darlington phototransistor 3 pin "Photo Interrupter" Application Note 3 pin phototransistor ic 1001 1002 phototransistor visible light CNB2003 ON2270 CNB1002
Contextual Info: Panasonic Small Package Reflective Photo-interrupter Series ON2170/2270,CNB1001/1002/2001 ,CNB2003 • ■ Features Package photograph •M iniature and thin type:2.7x3.4mm Height 1.5mm •P lastic resin to cut-off visible light is used •E asy interface to control circuit

Contextual Info: Panasonic G aAs M M ICs GN4002 GaAs N-Channel IC Unit : mm For high-frequency small-power SPDT switch • Features • Low insertion loss : LOSS= 0.6dB • High isolation : ISO= 30dB • Small package : Mini-type 6-pin package ■ Absolute Maximum Ratings

Contextual Info: Panasonic GaAs MMICs GN2012 GaAs N-Channel IC Unit : mm For UHF band mixer • Features • Large-capacitance capacitor built-in external bypass capacitor not necessary • Low distortion (IP3=12dBm) • High conversion gain (CG=12dB) • Small package : S-mini type 5-pin package

SSMini

Contextual Info: Panasonic S w itc h in g Diodes MA137 Silicon epitaxial planer type Unit : mm For high-speed switching circuits 0.80 0 .8 0 ± 0.05 I Features Small SS-Mini type package with two incorporated elements, en­ abling high-density mounting Series connection in package

LE79271

Abstract: Le79238 LE79124 ATIS-0600016 dpdt mechanical relays 3v GR-909 MMBTA92 vtds fxs interface integrated circuit AGN200A
Contextual Info: Le79234-SW TM VoiceEdge Control Processor Software Package Next Generation Carrier Chipset NGCC Data Sheet Applications • Call Control Package • • • • Document ID#:133545 Version 1 July 2009 Ordering Information Call Control Functions Basic Test Package

thermistor 100k

Abstract: ECJ-2YB1H104K ecj2yb1h104k smd transistor ne c2 transistor SMD DK ERJ3GSY0R00V philips thermistor 250 ohm RK73ZETTP 600S0R5BT250XT 600s3r3bt250xt
Contextual Info: SLD-1026Z 3 Watt Discrete LDMOS Device Plastic Surface Mount Package SLD-1026Z Preliminary 3 WATT DISCRETE LDMOS DEVICE PLASTIC SURFACE MOUNT PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Z Part Number Package: SOF-26 Product Description

Contextual Info: Automation Controls Catalog Highly efficient reflection package for proximity sensor Package AAM11 Series for IR LED Module FEATURES 1. Realization of small, low-profile reflector package through application of our unique MID* technology MIPTEC Individual piece: 2.3 x 1.95 × 0.9 mm

Contextual Info: Composite Transistors UP0187BG Silicon N-channel MOSFET For switching circuits • Package  High-speed switching  Incorporating a built-in gate protection-diode  Two elements incorporated into one package  SSMini type package, reduction of the mounting area and assembly cost

UP0187BG

Abstract: 2SK3938 UP0187B
Contextual Info: Composite Transistors UP0187BG Silicon N-channel MOSFET For switching circuits • Package  High-speed switching  Incorporating a built-in gate protection-diode  Two elements incorporated into one package  SSMini type package, reduction of the mounting area and assembly cost

2SK3938

Abstract: UP0187B UP0187BG
Contextual Info: Composite Transistors UP0187BG Silicon N-channel MOSFET For switching circuits • Package  High-speed switching  Incorporating a built-in gate protection-diode  Two elements incorporated into one package  SSMini type package, reduction of the mounting area and assembly cost

FK3F0301

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FK3F0301 Silicon N-channel MOS FET For switching circuits FK330301 in Lead-less type package • Overview  Package FK3F0301 is N-channel small signal MOS FET employed small size surface mounting package.

CU-106A

Abstract: 0.4mm pitch BGA IPC-6012A beagleboard 0.4mm pitch BGA routing IPC-6012 IPC-D-317 NAND FLASH LGA reflow profile CU-106A shelf life CBB Capacitor Selection Guide
Contextual Info: Application Report SPRAAV1B – May 2009 PCB Design Guidelines for 0.4mm Package-On-Package PoP Packages, Part I Keith Gutierrez and Gerald Coley . ABSTRACT

SLD-3091FZ

Abstract: SLD3091FZ GaN Bias 25 watt InP transistor HEMT 915 MHz RFID 27PF A191 22UF
Contextual Info: SLD-3091FZ 30 Watt Discrete LDMOS FET in Ceramic Flanged Package SLD-3091FZ Preliminary 30 WATT DISCRETE LDMOS FET IN CERAMIC FLANGED PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: A191 Product Description Features „ „ „ 30 Watt Output P1dB

SLD-2083CZ

Abstract: 915 MHz RFID SLD2083CZ GaN Bias 25 watt j20 Schematic InP transistor HEMT transistor BJT Driver smd transistor ne c2
Contextual Info: SLD-2083CZ SLD-2083CZ 12 Watt Discrete LDMOS FET in Ceramic Package 12 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS Package: RF083 Product Description Features „ „ „ 12 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz