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    PACKAGE MARKING IRFL9014 Search Results

    PACKAGE MARKING IRFL9014 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH1R306PL
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Datasheet
    TPH9R00CQH
    Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Datasheet
    TPHR8504PL
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Datasheet
    TPH9R00CQ5
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Datasheet
    XPH2R106NC
    Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Datasheet

    PACKAGE MARKING IRFL9014 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FL014

    Abstract: MARKING 67A marking code 67A 67a code marking TO-261AA Package code 67a IRFL014
    Contextual Info: IRFL9014PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Min. Typ. Max. Units Conditions -60 ––– ––– V VGS = 0V, ID = 250µA


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    irfl9014pbfeia-481eia-541eia-418-1+7fl014marking 67amarking code 67a67a code markingto-261aa packagecode 67airfl014 PDF

    IRFL9014PBF

    Abstract: FL014 IRF 100A AN-994 irf* p-channel sot-223 95153 TO-261AA DSS 1630
    Contextual Info: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A


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    irfl9014pbfot-223eia-481eia-541+8eia-418-1fl014irf 100aan-994irf* p-channel sot-22395153to-261aadss 1630 PDF

    FL014

    Abstract: FL014 Example AN-994 IRFL9014 IRFL4310
    Contextual Info: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier


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    0863airfl9014ot-223irfl014+4fl014fl014 examplean-994irfl4310 PDF

    FL014

    Abstract: IRFL9014PBF AN-994
    Contextual Info: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A


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    irfl9014pbfot-22312-mar-07fl014+1an-994 PDF

    91195

    Abstract: AN-994 VISHAY SOT LOT CODE International Rectifier TO-261AA
    Contextual Info: PD - 95153 IRFL9014PbF HEXFET Power MOSFET l l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling Lead-Free D VDSS = -60V RDS on = 0.50Ω G Description ID = -1.8A


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    irfl9014pbfot-22308-mar-0791195+3an-994vishay sot lot codeinternational rectifier to-261aa PDF

    Contextual Info: IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • -60 RDS(on) () VGS = -10 V Qg (Max.) (nC) 0.50 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S SOT-223 DESCRIPTION G D


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    irfl9014sihfl9014ot-2232002/95/ec+32011/65/eujs709a02-oct-12 PDF

    LD67

    Abstract: 1D11A AN-994 IRFL9014 package marking IRFL9014
    Contextual Info: PD-9.863 International Ie Rectifier IRFL9014 HEXFET® Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling ^ dss - "6 0 V ^DS on = 0-50É2


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    irfl9014ot-223it13tld67+31d11aan-994package marking irfl9014 PDF

    Contextual Info: PD 9.863A International k ?r Rectifier IRFL9014 HEXFET Power MOSFET • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling V d s s = -6 0 V R DS on = 0 -5 0 Q


    OCR Scan
    irfl9014ot-223gd2b44cj PDF

    Contextual Info: IRFL9014 MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A S Description S O T -2 2 3 The SOT-223 package is designed for surface-mount using


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    irfl9014ot-223 PDF

    IRFL9014

    Abstract: sot-223 MOSFET AN-994
    Contextual Info: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier


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    0863airfl9014ot-223performanc10+2sot-223 mosfetan-994 PDF

    irfl9014

    Contextual Info: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier


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    0863airfl9014ot-22308-mar-07 PDF

    IRFL9014

    Abstract: AN-994
    Contextual Info: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier


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    0863airfl9014ot-22312-mar-07+1an-994 PDF

    IRFL9014

    Abstract: SiHFL9014 SiHFL9014-E3 IRFL9014TR
    Contextual Info: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 • Dynamic dV/dt Rating Qgs (nC) 3.8 • Repetitive Avalanche Rated 5.1 • P-Channel Qgd (nC) Configuration


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    irfl9014sihfl9014ot-22318-jul-08+2sihfl9014-e3irfl9014tr PDF

    IRFL9014PBF

    Abstract: package marking IRFL9014
    Contextual Info: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 • Dynamic dV/dt Rating Qgs (nC) 3.8 • Repetitive Avalanche Rated 5.1 • P-Channel Qgd (nC) Configuration


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    irfl9014sihfl9014ot-22312-mar-07+2irfl9014pbfpackage marking irfl9014 PDF

    IRFL9014

    Abstract: SiHFL9014 SiHFL9014-E3 IRFL9014PBF
    Contextual Info: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 • Dynamic dV/dt Rating Qgs (nC) 3.8 • Repetitive Avalanche Rated 5.1 • P-Channel Qgd (nC) Configuration


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    irfl9014sihfl90142002/95/ecot-223+318-jul-08sihfl9014-e3irfl9014pbf PDF

    IRFL9014

    Abstract: SiHFL9014 SiHFL9014-GE3 SiHFL9014-E3 irfl9014trpbf IRFL9014PBF
    Contextual Info: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) (Ω) VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 G D G • Halogen-free According to IEC 61249-2-21


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    irfl9014sihfl9014ot-2232002/95/ec+511-mar-11sihfl9014-ge3sihfl9014-e3irfl9014trpbfirfl9014pbf PDF

    mosfet 10d

    Abstract: P-CHANNEL 90A POWER MOSFET AN-994 IRFL9014 1D11A sot-223 body marking A G Q E
    Contextual Info: PD-9.863 International Bgg Rectifier IRFL9014 HEXFET P o w e r M O S F E T • • • • • • • Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling VDSS = -60 V F * D S o n -


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    irfl9014ot-223mosfet 10dp-channel 90a power mosfet+3an-9941d11asot-223 body marking a g q e PDF

    siliconix sot-223 marking

    Contextual Info: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21


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    irfl9014sihfl90142002/95/ecot-223+211-mar-11siliconix sot-223 marking PDF

    Contextual Info: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21


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    irfl9014sihfl9014ot-2232002/95/ec+22011/65/eu12-mar-12 PDF

    irfl9014trpbf

    Abstract: IRFL9014TR SiHFL9014TR-GE3
    Contextual Info: IRFL9014, SiHFL9014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S DESCRIPTION SOT-223 D G G D • Halogen-free According to IEC 61249-2-21


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    irfl9014sihfl90142002/95/ecot-223+52011/65/eu12-mar-12irfl9014trpbfirfl9014trsihfl9014tr-ge3 PDF

    Contextual Info: IRFL9014, SiHFL9014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • - 60 RDS(on) () VGS = - 10 V 0.50 Qg (Max.) (nC) 12 Qgs (nC) 3.8 Qgd (nC) 5.1 Configuration Single S SOT-223 Surface Mount


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    irfl9014sihfl9014ot-2232002/95/ec+32011/65/eujs709a02-oct-12 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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    element-14f155-6af155-10af165-15a+11f175-25airfb4115bty79 equivalentdiode skn 21-04marking code w04 sot-23bbc 598 479 diodemw 137 600gtfk 401 s 673vishay telefunken tfk transistorinfineon transistor marking w31jys marking transistor PDF

    1N4148

    Abstract: 2SJ326-Z BSP170P DAC7551 DFN-10 IRFL9014 NTF2955 TP2510 XTR111
    Contextual Info: XTR111 XRT1 11 SBOS375 − NOVEMBER 2006 Precision Voltage-to-Current Converter/Transmitter FEATURES DESCRIPTION D EASY-TO-DESIGN INPUT/OUTPUT RANGES: The XTR111 is a precision voltage-to-current converter designed for the standard 0mA−20mA or 4mA−20mA


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    xtr111sbos3750ma-20ma4ma-20ma+95ma-25ma1n41482sj326-zbsp170pdac7551dfn-10irfl9014ntf2955tp2510 PDF

    xtr111

    Abstract: 5mA-25mA P-MOSFET transistor NEC dfn10
    Contextual Info: XTR111 XRT1 11 SBOS375 − NOVEMBER 2006 Precision Voltage-to-Current Converter/Transmitter FEATURES DESCRIPTION D EASY-TO-DESIGN INPUT/OUTPUT RANGES: The XTR111 is a precision voltage-to-current converter designed for the standard 0mA−20mA or 4mA−20mA


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    xtr111sbos3750ma-20ma4ma-20ma+35ma-25map-mosfet transistornec dfn10 PDF