PACKAGE M604 Search Results

Contextual Info: PACKAGE DIMENSIONS mm M604 88 6 78 17 — e 75 7 7 7,7,7 3.5 , 3.5 3.5 Tfl j[ + Ei 16.5 2*^5 4 35 / U / t t *•-BO to lì Ls X BXt by 1 B2 EC 'A * —eo| ^ - s — j-x> 60 Collmer Semiconductor, Inc. • Phone: (972) 733-1700 • FAX: (972) 381-9991

Contextual Info: BIPOLAR TRANSISTOR MODULES Ratings and Specifications 3 1400 volts class power transistor modules • Power transistors and free wheel diodes are built into one package. • Terminal layout in which drive wiring and power wiring do not come accross. Device type

M607

Abstract: 6MBI50L-120
Contextual Info: /\°7 — y / W ^ / Power Devices 3 ft 1200 1200 volts class/High speed switching m £ V ces V ges Device type Ic Cont. Pc VCE sat (VQE-15V) (Min.) to (- ton Amps. ^sec. V o te Switching tíme (Max.) tf toff K ft Package Net mass Gram s Votts Volts Amps Watte

IF8A

Abstract: 6MBI8F-120 M604 Diode 1200V 8A igbt 1200v 8A
Contextual Info: 6MBI8F-120 8A IGBT Module 1200V / 8A 6 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 低飽和電圧 Low Saturation Voltage 電圧駆動(MOSｹﾞｰﾄ構造）Voltage Drive 豊富な容量系列 Variety of Power Capacity Series

igbt 300V 10A

Abstract: 10A motor drive 6MBI10F-060 M604 AC Motor Servo Schematic 6mbi
Contextual Info: 6MBI10F-060 10A IGBT Module 600V / 10A 6 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 低飽和電圧 Low Saturation Voltage 電圧駆動(MOSｹﾞｰﾄ構造）Voltage Drive 豊富な容量系列 Variety of Power Capacity Series

OF IGBT 600V 15A

Abstract: ac servo amplifier schematic 6MBI15F-060 M604 power diode 600V 15A
Contextual Info: 6MBI15F-060 15A IGBT Module 600V / 15A 6 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 低飽和電圧 Low Saturation Voltage 電圧駆動(MOSｹﾞｰﾄ構造）Voltage Drive 豊富な容量系列 Variety of Power Capacity Series

6MBI15L-060

Abstract: M604 6MBI15L060
Contextual Info: 6MBI15L-060 15A IGBT Module 600V / 15A 6 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 高速ｽｲｯﾁﾝｸﾞ High speed switching 低飽和電圧 Low Saturation Voltage 高入力ｹﾞｰﾄ抵抗(MOS 構造） High Input Impedance

20A igbt

Abstract: 600v 20a IGBT M604 6MBI20L-060
Contextual Info: 6MBI20L-060 20A IGBT Module 600V / 20A 6 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 高速ｽｲｯﾁﾝｸﾞ High speed switching 低飽和電圧 Low Saturation Voltage 高入力ｹﾞｰﾄ抵抗(MOS 構造） High Input Impedance

6MBI10L-060

Abstract: M604
Contextual Info: 6MBI10L-060 10A IGBT Module 600V / 10A 6 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 高速ｽｲｯﾁﾝｸﾞ High speed switching 低飽和電圧 Low Saturation Voltage 高入力ｹﾞｰﾄ抵抗(MOS 構造） High Input Impedance

6MBI8L-120

Abstract: M604 diode 8a 600v igbt 1200v 8A
Contextual Info: 6MBI8L-120 8A IGBT Module 1200V / 8A 6 in one-package 外形寸法 Outline Drawings 特長 ：Features 特長： 高速ｽｲｯﾁﾝｸﾞ High Speed Switching 低飽和電圧 Low Saturation Voltage 高入力ｹﾞｰﾄ抵抗(MOS 構造） High Input Impedance

M605

Abstract: 1DI500A-030 IC M605 6DI30A-050 IVI60 m601 all type transistor equivalent h2 transistor 6DI15A-050 equivalent EVF31T-050A
Contextual Info: Transistor Modules COL L ME R S E M I C O N D U C T O R ES INC MAE D • 25367=12 O Q G l b m T14 « C O L 6-pack power transistor modules 6 pow er transistors and 6 free wheels are built into one package. All term inals are insulated from m ounting plate.

M124

Abstract: R605A OE R611 m210 g
Contextual Info: PACKAGE DIMENSIONS mm T03PL E m a x. ' M110 5.0 ¿ 3 .2 .20 <§ 1 l° ‘ f « 3 ? « 101 o 4. CD 1 2 3 | 1 ! in I 3.0 •Ii 2.0 <n E E 0. 6 „ 3. 0 G a te C o lle c to r E m itte r 5.5 3.5 T03PF M116 ;° J 'eri 2 °± 2 - 0 ., 0.6 ; £ 3.0 I i iS 1 ij

Contextual Info: 3 B IGBT MODULES Ratings and Specifications 600 volts class 6 in one-package IGBT m o d u les /H ig h speed sw itch in g L series • H ig h s p e e d s w it c h in g • V o lta g e d r iv e m e t h o d p e r m it s lo w p o w e r d r iv e Device type Q

m605

Abstract: 1di200 m602 ic 6DI30B-050
Contextual Info: Q BIPOLAR TRANSISTOR MODULES Ratings and Specifications 1400 volts class pow er transistor m odules • P o w e r tra n sisto rs and free w h e e l d io d e s are bu ilt into o n e package. • T e rm in a l la yo u t in w h ic h driv e w irin g and p o w e r w irin g d o not c o m e accross.

m6045p

Contextual Info: M6035P, M6045P & M6060P New Product Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop 3 2 • High forward surge capability

m6045p

Abstract: JESD22-B102D J-STD-002B
Contextual Info: New Product M6035P, M6045P & M6060P Vishay General Semiconductor Dual Common-Cathode Schottky Rectifier FEATURES • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop 3 2 • High forward surge capability

M605

Abstract: M6050 high precision TCXO Crystal Oscillators
Contextual Info: Introduces M6049/M6050 Series HCMOS/Clipped Sinewave Precision TCXO/TCVCXO Features:  Tight Stability 0.5 ppm  Low Phase Noise  3.3 V and 5.0 V Versions  Frequencies from 8 to 52 MHz Applications:  Telecommunications such as SERDES / SONET / WiMAX /

bridge rectifier 24V AC to 24v dc

Abstract: 1N5408 smd diodes GSIB1560
Contextual Info: Switch Mode Power Supply Table of Contents ADAPTOR, Buck Capacitance. 3 ADAPTOR, EMI Filtering. 4

1N4007 MINI MELF

Contextual Info: LCD Television Table of Contents BACKLIGHT INVERTER, Lighting Ignitor. 3 BACKLIGHT INVERTER, MOSFET Driver. 4

COLOR tv tube charger circuit diagrams

Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Schottky Diode 039 B34

Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

GL6ZR27

Contextual Info: PREPARED BY: DATE: S,m /16/4? I I -UAW30 ELECTRONIC a- COMFWENTS LUKruKn lx994049 GROUP 1 lUl-4 Opto-Electronic SPiKIFICATION DEVICE SPECIFICATION SPEC.No. Devices Division FOR Light Emitting Diode MODEL No. GL6ZR27 1. These specification sheets include materials protected under the copyright of Sharp Corporation “Sharp” .

2mbi25f

Contextual Info: 3 IGBT MODULES Ratings and Specifications 1200 v o lts class IGBT m o d u le s /L o w o n -sta te v o lta g e F series • L o w s a t u r a t io n v o lta g e • V o lta g e d r iv e m e t h o d p e r m it s lo w p o w e r d riv e Vets Pc S w itc h in g tim e (M ax.)

6MBI50FA-060

Abstract: 2mbi200f 6MBI10F
Contextual Info: /\°7—T / W * / Power Devices • IG B T ïv a - ^ F v 'J -X IG BT Modules, F series 600V ? 7 Z 1 & * > W E B 600 volts class/Low on-state voltage m & Device type 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI300F-060 1MBI300F-060 1MBI400F-060