PACKAGE AND PACKING INFORMATION ST Search Results

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220AC 2 Lead Leaded Plastic Package Package Outline, Packing Tube, Packaging and Handling Information TO220AC_Pkg_Drawing Rev271005 Continental Device India Limited

TE32D

Abstract: EIA and EIAJ tape standards TE3212 EIA and EIAJ standards RC-1009B TA7745
Contextual Info: 6. PACKING INFORMATION To deliver flat IC packages, three package method are available: the same stick packages as the ordinary DIP type, taping, and embossed taping. 6-1 Stick Specifications for Flat Packages • Shape and dimensions Example: FLP type Fig. 6-1

j13009

Contextual Info: FJA13009 High-Voltage Switch Mode Application Features • High-Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-3P 1.Base 2.Collector 3.Emitter Ordering Information Part Number Marking Package Packing Method FJA13009TU J13009 TO-3P

Contextual Info: FSB660A PNP Low Saturation Transistor Description C These devices are designed with high-current gain and low saturation voltage with collector currents up to 2 A continuous. E B SuperSOT -3 SOT-23 Ordering Information Part Number Marking Package Packing Method

Contextual Info: BC63916 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications 1 TO-92 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method BC63916_D74Z BC639-16 TO-92 3L Ammo BC63916_D27Z BC639-16 TO-92 3L

Contextual Info: MMBT3646 NPN Switching Transistor Features 3 • NPN High Speed Switching Transistor • Process 22 2 1 SOT-23 1. Base 2. Emitter 3. Collector Ordering Information Part Number Top Mark Package Packing Method MMBT3646 23 SOT-23 3L Tape and Reel Absolute Maximum Ratings

Contextual Info: BAT54HT1G Schottky Barrier Diodes Connection Diagram 1 1 A2 2 SOD-323 2 Ordering Information Part Number Marking Package Packing Method BAT54HT1G A2 SOD-323 2L Tape and Reel Absolute Maximum Ratings 1 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

Contextual Info: VN820 High-side driver Datasheet − production data Features Type RDS on IOUT VCC VN820 VN820SP VN820-B5 VN820PT 40 mΩ 9A 36 V 1 • Very low standby current ■ CMOS compatible input ■ On-state open-load detection ■ Off-state open-load detection ■

Contextual Info: VN820 High-side driver Datasheet − production data Features Type RDS on IOUT VCC VN820 VN820SP VN820-B5 VN820PT 40 mΩ 9A 36 V 1 • Very low standby current ■ CMOS compatible input ■ On-state open-load detection ■ Off-state open-load detection ■

6942

Contextual Info: VN750 High-side driver Datasheet − production data Features Type VN750 VN750S VN750PT VN750-B5 RDS on IOUT VCC SO-8 60 mΩ 6A PENTAWATT 36 V • CMOS compatible input ■ On-state open-load detection ■ Off-state open-load detection ■ Shorted load protection

ATMEL 740

Abstract: atmel 830 ATMEL Tape and Reel drawing LQFP-44 ATMEL shipping label atmel 0635 ATMEL Tape and Reel QFN-64 QFN-64 atmel 1030 pj 54 diode
Contextual Info: Packaging and Packing Information Packaging according to IEC 60286-3 for Tape and Reel, and IEC 60286-4 for tube packing. 1. Labels In general, on products coming out of Atmel ’s Heilbronn Germany location, two labels are on the inner cardboard: Atmel's standard bar code label and a customer

VND1NV04TR-E

Abstract: Power MOSFET SOT-223 VND1NV04-E min33 OMNIFET
Contextual Info: VND1NV04 VNN1NV04 - VNS1NV04 OMNIFET II fully autoprotected Power MOSFET Features Parameter Symbol Value Max on-state resistance per ch. RON 250 mΩ ILIMH 1.7 A VCLAMP 40 V Current limitation (typ) Drain-source clamp voltage 3 1 TO-252 (DPAK) 2 1 • Linear current limitation

Contextual Info: SD2951-10 250 W, 50 V HF/VHF DMOS transistor Datasheet - target specification Description The SD2951-10 is an N-channel MOS field-effect RF power transistor, intended for use in 50 V dc large signal applications up to 230 MHz. It offers 25% lower RDS ON than the industry standard,

Contextual Info: VNL5030J-E VNL5030S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description PowerSSO-12 The VNL5030J-E and VNL5030S5-E are monolithic devices made using STMicroelectronics VIPower® technology, intended for driving resistive or inductive loads

BAS85

Abstract: smd diode code BAS85 BAS85,115
Contextual Info: BAS85 Schottky barrier diode Rev. 05 — 25 March 2009 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a small hermetically sealed glass SOD80C Surface-Mounted

BAT760

Abstract: SC-76 A4 sod323 MARKING CODE SMD diode 12NC ordering code nxp
Contextual Info: BAT760 Medium power Schottky barrier single diode Rev. 03 — 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a SOD323 SC-76 very small Surface-Mounted

subsma

Contextual Info: HS1AL - HS1ML creat by ART 1.0AMP High Efficient Surface Mount Rectifiers Sub SMA Features — Glass passivated junction chip. — For surface mounted application — Low forward voltage drop — Low profile package — Built-in stain relief, ideal for automatic

Contextual Info: QR806/QR806F/QR806D PLANAR STRUCTURED SUPERFAST RECOVERY RECTIFIERS VOLTAGE 600 Volt 8 Ampere CURRENT QR806 TO-220AC FEATURES • Planar structure with EPI wafer • Ultrafast recovery time, low VF and soft recovery • For PFC DCM/CCM operation • Low leakage current

Contextual Info: VN5R003H-E 3 mΩ reverse battery protection switch Datasheet − production data Features Max supply voltage VCC -16 to 41 V Operating voltage range VCC -16 to 28 V On-state resistance RON 3 mΩ GA P GC FT00135 HPak • ■ General – Optimized electromagnetic emissions

CDM-AEC-Q100-011

Abstract: VN5R003H-E VN5R003HTR-E VN5R003HTR 17602
Contextual Info: VN5R003H-E 3 mΩ reverse battery protection switch Datasheet − production data Features Max supply voltage VCC -16 to 41 V Operating voltage range VCC -16 to 28 V On-state resistance RON 3 mΩ GA P GC FT00135 HPak • ■ General – Optimized electromagnetic emissions

smd diode schottky code marking A4

Abstract: MARKING CODE SMD diode A4 sod323 diode bat760 sod323 wave soldering
Contextual Info: BAT760 Medium power Schottky barrier single diode Rev. 03 — 17 October 2008 Product data sheet 1. Product profile 1.1 General description Planar medium power Schottky barrier single diode with an integrated guard ring for stress protection, encapsulated in a SOD323 SC-76 very small Surface-Mounted

PMEG4002EL

Contextual Info: PMEG4002EL 40 V, 0.2 A low VF MEGA Schottky barrier rectifier Rev. 02 — 11 March 2009 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small

Contextual Info: P4SMAFJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 400 Watts 8.5 to 170 Volts STAND-OFF VOLTAGE FEATURES • For surface mounted applications in order to optimize board space. • Glass passivated junction • Low inductance • Ultra thin profile package for space constrained utilization

Contextual Info: QR406/QR406F/QR406D/QD406S PLANAR STRUCTURED SUPERFAST RECOVERY RECTIFIERS VOLTAGE 600 Volt 4 Ampere CURRENT QR406 TO-220AC FEATURES • Planar structure with EPI wafer • Ultrafast recovery time, low V F and soft recovery • For PFC DCM operation QR406F ITO-220AC