PACKAGE 1218 Search Results
PACKAGE 1218 Equivalents
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PACKAGE 1218 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| TPH1R306PL |
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N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQH |
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MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPHR8504PL |
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N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQ5 |
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N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) | Datasheet | ||
| XPH2R106NC |
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N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) | Datasheet |
PACKAGE 1218 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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TSOP048-P-1218-1Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 48 PIN PLASTIC To Top / Package Lineup / Package Index FPT-48P-M07 EIAJ code : TSOP048-P-1218-1 48-pin plastic TSOP I Lead pitch 0.50 mm Lead shape Gullwing Lead bend direction Normal bend |
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FPT-48P-M07 TSOP048-P-1218-1 48-pin FPT-48P-M07) F48015S-4C-3 TSOP048-P-1218-1 | |
Ablebond 8380
Abstract: smema DA6523 nozzle heater X3304 Theta-JC 5th mechnical engineering date sheet alpha Resistors slide cut template DRAWING Die Attach epoxy stamping
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CH12WIP Ablebond 8380 smema DA6523 nozzle heater X3304 Theta-JC 5th mechnical engineering date sheet alpha Resistors slide cut template DRAWING Die Attach epoxy stamping | |
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Contextual Info: SILICON PIN DIODES Selection guide SILICON PIN DIODES Selection Guide PAGE HOW TO SPECIFY A PIN DIODE? 12-5 SURFACE MOUNT PACKAGE - PLASTIC PACKAGE SWITCHING SILICON PIN DIODES 12-6 - PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES 12-8 - LOW COST SQUARE CERAMIC PACKAGE PIN DIODES |
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DiodesContextual Info: SILICON PIN DIODES Selection guide SILICON PIN DIODES Selection Guide PAGE HOW TO SPECIFY A PIN DIODE? 12-5 SURFACE MOUNT PACKAGE - PLASTIC PACKAGE SWITCHING SILICON PIN DIODES 12-6 - PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES 12-8 - LOW COST SQUARE CERAMIC PACKAGE PIN DIODES |
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Ablebond 8380
Abstract: X3304 ablestik ablebond Ablestik 8380 A5700 shoulder angle foot length lead solder joint reliability smema control IPC-SM-780 tms 3615 A5716
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ANSI/J-STD-001, Ablebond 8380 X3304 ablestik ablebond Ablestik 8380 A5700 shoulder angle foot length lead solder joint reliability smema control IPC-SM-780 tms 3615 A5716 | |
LT1460BCS3-10
Abstract: marking code LTGG LTGF marking code sot 23 MARK LTGG LTKD MARKING CODE ltbw LM 3937 LT1460BCS3-2 LT1521CS8-3 LTHS
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20-Lead 20-Lead 28-Lead LT1613CS5 LT1615CS5 LT1615CS5-1 LT1617CS5 LT1617CS5-1 LT1761ES5-1 LT1761ES5-2 LT1460BCS3-10 marking code LTGG LTGF marking code sot 23 MARK LTGG LTKD MARKING CODE ltbw LM 3937 LT1460BCS3-2 LT1521CS8-3 LTHS | |
DIODE smd marking 22-16
Abstract: vco lm358n LM358 laser driver lm358 current limiter Zener diode smd marking code 621 adjustable zero span circuit with lm358 TRANSISTOR SMD MARKING CODE a7 j zener SMD MARK A9 TRANSISTOR SMD MARKING CODE SAW smd transistor code 621
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LM358, LMC6035, LM431, LM78L05, LMC555 OT23-5 DIODE smd marking 22-16 vco lm358n LM358 laser driver lm358 current limiter Zener diode smd marking code 621 adjustable zero span circuit with lm358 TRANSISTOR SMD MARKING CODE a7 j zener SMD MARK A9 TRANSISTOR SMD MARKING CODE SAW smd transistor code 621 | |
A004R
Abstract: RO4350 VMMK-1218 VMMK-1218-BLKG USL10
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VMMK-1218 VMMK-1218 100mm 250mm AV02-1081EN A004R RO4350 VMMK-1218-BLKG USL10 | |
LG 5804
Abstract: VMMK-1218-BLKG RGS 13/1 PHEMT marking code a BYY 56 byy 88 A004R MM20 RO4350 VMMK-1218
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VMMK-1218 VMMK-1218 100mm 250mm AV02-1081EN LG 5804 VMMK-1218-BLKG RGS 13/1 PHEMT marking code a BYY 56 byy 88 A004R MM20 RO4350 | |
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Contextual Info: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that |
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VMMK-1218 VMMK-1218 100mm 250mm AV02-1081EN | |
A004R
Abstract: MM20 RO4350 VMMK-1218 VMMK-1218-BLKG 802.11abgn
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VMMK-1218 VMMK-1218 100mm 250mm AV02-1081EN A004R MM20 RO4350 VMMK-1218-BLKG 802.11abgn | |
LG 5804Contextual Info: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that |
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VMMK-1218 VMMK-1218 100mm 250mm AV02-1081EN LG 5804 | |
LG 5804
Abstract: VMMK-1218-BLKG VMMK-1218 A004R MM20 RO4350
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VMMK-1218 VMMK-1218 100mm 250mm AV02-1081EN LG 5804 VMMK-1218-BLKG A004R MM20 RO4350 | |
117450
Abstract: TO253 lt941 ltc947 1624i LT 129i5 sm 2178a LT1510CGN sot23 1303 ltbw 83
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20-Lead 20-Lead O-220 117450 TO253 lt941 ltc947 1624i LT 129i5 sm 2178a LT1510CGN sot23 1303 ltbw 83 | |
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Contextual Info: BPW21R www.vishay.com Vishay Semiconductors Silicon Photodiode FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity |
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BPW21R BPW21R 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW17N 2002/95/EC 2002/96/EC BPW17N 11-Mar-11 | |
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Contextual Info: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW16N 2002/95/EC 2002/96/EC BPW16N 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
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Contextual Info: BPW20RF www.vishay.com Vishay Semiconductors Silicon Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity |
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BPW20RF BPW20RF 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: BPW20RF www.vishay.com Vishay Semiconductors Silicon Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity |
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BPW20RF BPW20RF 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: BPW21R www.vishay.com Vishay Semiconductors Silicon Photodiode FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity |
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BPW21R BPW21R 11-Mar-11 | |
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Contextual Info: BPW20RF www.vishay.com Vishay Semiconductors Silicon Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity |
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BPW20RF BPW20RF 11-Mar-11 | |
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Contextual Info: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW17N 2002/95/EC 2002/96/EC BPW17N 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
pn photodiodeContextual Info: BPW21R www.vishay.com Vishay Semiconductors Silicon Photodiode FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity |
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BPW21R 2002/95/EC 2002/96/EC BPW21R 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 pn photodiode | |
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Contextual Info: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW16N 2002/95/EC 2002/96/EC BPW16N 11-Mar-11 | |