PACKAGE 1218 Search Results
PACKAGE 1218 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 54ACT825/QKA | Rochester Electronics LLC | 54ACT825/QKA - Dual marked (5962-9161101MKA), D-Type Flip-Flop, 5V, 24-CFP |
|
||
| TPH1R306PL | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQH | Toshiba Electronic Devices & Storage Corporation | MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPHR8504PL | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQ5 | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) | Datasheet |
PACKAGE 1218 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
TSOP048-P-1218-1Contextual Info: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 48 PIN PLASTIC To Top / Package Lineup / Package Index FPT-48P-M07 EIAJ code : TSOP048-P-1218-1 48-pin plastic TSOP I Lead pitch 0.50 mm Lead shape Gullwing Lead bend direction Normal bend |
Original |
fpt-48p-m07tsop048-p-1218-148-pinf48015s-4c-3 | |
Ablebond 8380
Abstract: smema DA6523 nozzle heater X3304 Theta-JC 5th mechnical engineering date sheet alpha Resistors slide cut template DRAWING Die Attach epoxy stamping
|
Original |
ch12wipablebond 8380smemada6523+7 | |
|
Contextual Info: SILICON PIN DIODES Selection guide SILICON PIN DIODES Selection Guide PAGE HOW TO SPECIFY A PIN DIODE? 12-5 SURFACE MOUNT PACKAGE - PLASTIC PACKAGE SWITCHING SILICON PIN DIODES 12-6 - PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES 12-8 - LOW COST SQUARE CERAMIC PACKAGE PIN DIODES |
Original |
||
DiodesContextual Info: SILICON PIN DIODES Selection guide SILICON PIN DIODES Selection Guide PAGE HOW TO SPECIFY A PIN DIODE? 12-5 SURFACE MOUNT PACKAGE - PLASTIC PACKAGE SWITCHING SILICON PIN DIODES 12-6 - PLASTIC PACKAGE ATTENUATING SILICON PIN DIODES 12-8 - LOW COST SQUARE CERAMIC PACKAGE PIN DIODES |
Original |
diodes | |
Ablebond 8380
Abstract: X3304 ablestik ablebond Ablestik 8380 A5700 shoulder angle foot length lead solder joint reliability smema control IPC-SM-780 tms 3615 A5716
|
Original |
ansi/j-std-001ablebond 8380x3304ablestik ablebond+7 | |
LT1460BCS3-10
Abstract: marking code LTGG LTGF marking code sot 23 MARK LTGG LTKD MARKING CODE ltbw LM 3937 LT1460BCS3-2 LT1521CS8-3 LTHS
|
Original |
20-lead28-leadlt1613cs5lt1615cs5+15 | |
DIODE smd marking 22-16
Abstract: vco lm358n LM358 laser driver lm358 current limiter Zener diode smd marking code 621 adjustable zero span circuit with lm358 TRANSISTOR SMD MARKING CODE a7 j zener SMD MARK A9 TRANSISTOR SMD MARKING CODE SAW smd transistor code 621
|
Original |
lm358lmc6035lm431lm78l05+12 | |
A004R
Abstract: RO4350 VMMK-1218 VMMK-1218-BLKG USL10
|
Original |
vmmk-1218100mm250mmav02-1081en+4 | |
LG 5804
Abstract: VMMK-1218-BLKG RGS 13/1 PHEMT marking code a BYY 56 byy 88 A004R MM20 RO4350 VMMK-1218
|
Original |
vmmk-1218100mm250mmav02-1081en+9 | |
|
Contextual Info: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that |
Original |
vmmk-1218100mm250mmav02-1081en | |
A004R
Abstract: MM20 RO4350 VMMK-1218 VMMK-1218-BLKG 802.11abgn
|
Original |
vmmk-1218100mm250mmav02-1081en+5 | |
LG 5804Contextual Info: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that |
Original |
vmmk-1218100mm250mmav02-1081en+1 | |
LG 5804
Abstract: VMMK-1218-BLKG VMMK-1218 A004R MM20 RO4350
|
Original |
vmmk-1218100mm250mmav02-1081en+5 | |
117450
Abstract: TO253 lt941 ltc947 1624i LT 129i5 sm 2178a LT1510CGN sot23 1303 ltbw 83
|
Original |
20-leado-220117450to253+8 | |
|
|
|||
|
Contextual Info: BPW21R www.vishay.com Vishay Semiconductors Silicon Photodiode FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity |
Original |
bpw21r2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
bpw17n2002/95/ec2002/96/ec11-mar-11 | |
|
Contextual Info: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
bpw16n2002/95/ec2002/96/ec2011/65/eu+1 | |
|
Contextual Info: BPW20RF www.vishay.com Vishay Semiconductors Silicon Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity |
Original |
bpw20rf2002/95/ec2011/65/eujs709a+1 | |
|
Contextual Info: BPW20RF www.vishay.com Vishay Semiconductors Silicon Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity |
Original |
bpw20rf2011/65/eu2002/95/ec12-mar-12 | |
|
Contextual Info: BPW21R www.vishay.com Vishay Semiconductors Silicon Photodiode FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity |
Original |
bpw21r11-mar-11 | |
|
Contextual Info: BPW20RF www.vishay.com Vishay Semiconductors Silicon Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • High radiant sensitivity |
Original |
bpw20rf11-mar-11 | |
|
Contextual Info: BPW17N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
bpw17n2002/95/ec2002/96/ec2011/65/eu+1 | |
pn photodiodeContextual Info: BPW21R www.vishay.com Vishay Semiconductors Silicon Photodiode FEATURES • Package type: leaded • Package form: TO-5 • Dimensions in mm : Ø 8.13 • Radiant sensitive area (in mm2): 7.5 • High photo sensitivity • Adapted to human eye responsivity |
Original |
bpw21r2002/95/ec2002/96/ec2011/65/eu+2 | |
|
Contextual Info: BPW16N www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-¾ • Dimensions in mm : Ø 1.8 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
bpw16n2002/95/ec2002/96/ec11-mar-11 | |