PA2725UT1A Search Results
PA2725UT1A Datasheets Context Search
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Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR PA2725UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm DESCRIPTION 1.27 The μ PA2725UT1A is N-Channel MOS Field Effect Transistor designed for DC/DC converter applications. 1 5 |
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PA2725UT1A PA2725UT1A PA2725UT1A-E1-AZ PA2725UT1A-E2-AZ | |
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Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2725UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING Unit: mm 1 7 • Low on-state resistance 3 6 4 5 +0.1 0.42 −0.05 RDS(on)1 = 5.0 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 7.5 mΩ MAX. (VGS = 4.5 V, ID = 13 A) |
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PA2725UT1A PA2725UT1A | |
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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