PA2510TM Search Results

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2510 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm 1 2 3 4 • Low on-state resistance +0.1 spreader. The land size is same as 8-pin TSSOP. 0.25 −0.05 • µ PA2510 has a thin surface mount package with a heat

PA2510

Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA2510 P チャネル MOS FET スイッチング用 µ PA2510 は，ヒート・スプレッダ内蔵の P チャネル MOS 外形図（単位：mm） 1 2 3 4 徴 +0.1

PA2510

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2510 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm 0.10 M • Low on-state resistance +0.1 spreader. The land size is same as 8-pin TSSOP. 0.25 −0.05 • µ PA2510 has a thin surface mount package with a heat

PA2510

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid