PA1952TE Search Results

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Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA1952 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA1952 is a switching device which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent

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Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1952 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA1952 is a switching device, which can be driven directly by a 1.8 V power source. The device features a low on-state resistance and excellent

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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

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Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1952 P チャネル パワーMOS FET スイッチング用 µ PA1952 は，1.8 V 電源系による直接駆動が可能なス 外形図（単位：mm） イッチング素子です。