P2F 17 Search Results

microwave antenna

Abstract: P2F-52 p2f 43 parabolic microwave antenna Andrew antennas microwave antenna andrew EIA-195-C
Contextual Info: Terrestrial Microwave Antenna Products P2F-52 Antenna 0.6m 2ft Parabolic Antenna A ndrew 52 series antennas are designed to meet the requirements of the 5 GHz unlicensed bands. This antenna uses proprietary technology to deliver superior electrical performance.

p2f 17

Contextual Info: NEW P 2F-17 1.71 - 1 .9 9 GHz & P2F-23B (2 .2 9 - 2.5 GHz) A nten n as W ide-Beam , Lo w W indload A n te n n a s for P C S , S p re a d S p e c tru m A p p lic a tio n s N o w PCS and Spread Spectrum system designers and operators can take advantage of high gain perform ance and reliable,

Contextual Info: KM684000A Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft October 26th 1993 Advance 0.1 Revise December 9th 1994 Prelim inary 0.2 Revise - Changed Operating current Icc2; 80m A -> 90mA

Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS

PHEMT marking code a

Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

transistor P2F

Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz

transistor SMD P2F

Abstract: smd p2f transistor smd p2f transistor P2F P2F SMD TRANSISTOR MARKING P2F smd transistor marking 26 smd transistor p2f transistor marking p2f ON MARKING P2F
Contextual Info: Transistors SMD Type PNP Switching Transistor PXT2907A Features High current max. 600 mA Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage

transistor SMD P2F

Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

Contextual Info: Product specification PXT2907A Features High current max. 600 mA Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -5 V

Contextual Info: A COMPANY OF MODEL CP- X F W irewound Fuse Resistors C o m m e rc ia l, P o w er, A x ia l Lead FEATURES • • • • Fireproof inorganic construction Multiple physical configurations available Terminal strength - 7 pound pull test Special inorganic potting compound provides high thermal

Contextual Info: Low Cost Temperature Meters with 6-Channel Selector Switch Model DP45-JF 348 $ Shown with SB45 ߜ Thermocouples J, K, R or S with 1° Resolution ߜ RTD with 0.1° or 1° Resolution ߜ CSA and UL Approved ߜ Available with 6-Channel Switch Box ߜ Low Cost

Contextual Info: 1 & KRL KRL STYLE C-l/4 P-l/2 C-l/2 (P-1A) C-1A C-1B (P-1C) C-1C C-1D (P-2) C-2 (P-2A) C-2A C-2B (P-2C) C-2C (P-2D) C-2D (P-2E) C-2E (P-2F) C-2F (P-3) C-3 C-4 (P-5) C-5 (P-6) C-6 C-7 C-7A C-10A P & C SERIES Wlrewound Power Resistors MIL-R-26 MIL-R39007 RW-70

P3F filtronic

Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B
Contextual Info: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency

transistor marking code 1325

Abstract: R04003 ims pcb filtronic Solid State
Contextual Info: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency

P 9806 AD

Contextual Info: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power

transistor Bc 542

Abstract: transistor bc 567
Contextual Info: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power

Contextual Info: Ordering number : ENA1696 LC823410-10R CMOS IC Ultra-Low Power Consumption 7.0mW Large-Scale System LSI, GokLow, for IC Recorders http://onsemi.com Overview The LC823410-10R is a system IC that uses ultra-low power consumption technology to realize long-time playback and

PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.

MP2F

Abstract: 40af 91631 MP2-S1206-51M1-TFB0 h17a tba 2218 TGS0 til 701 HB125 til 31a
Contextual Info: 3M 3M Backplane and CompactFlash w Connectors MetPak™ 2 HM Sockets and Headers E 4 « q u i» * u | ^ 1 ü F l|.2 iH t t o ix u n U r . F l|. 3 ^R g .S F I ,. 4 & “ R g .6 1119: : » ir m u m h rru r n r» r a n ; U O iW X Female Sockel. Right Angle. PCB Press Fit Term inals. Shielded Ground

Contextual Info: Preliminary CMOS SRAM KM616S4000C Family Document Tills 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. 0.0 0.01 History Draft Date Remark Initial draft Errata correction June 16, 1998 August 10, 1998 Prelim inary The attached datasheets are provided by SAM SU N G Electronics. S A M SU NG Electronics CO., LTD. reserve th e right to change th e specifications and

RTC p1F

Abstract: r20 p2f LC823410 PCM57 ntrst lc8234 14X14 16CV33BS r20 p1f TQFP120
Contextual Info: 注文コード No.N A 1 6 9 6 CMOS LSI LC823410-10R 極低消費電力7.0mW ICレコーダ用システムLSI GokLow 概要 LC823410-10R はIC レコーダ用途として、極消費電力技術による長時間再生、長時間録音を実現し、

Contextual Info: Preliminary CMOS SRAM KM616U2000 Family 128K x16 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION FEATURES • Process T echnology : 0.4|im C M O S • Organization :128Kx16 • Power Supply Voltage KM 616U2000 Family : 3.0±0.3V • Low Data Retention Voltage : 2V Min

Contextual Info: I b2MTñEñ D D l b ? ^ MITSUBISHI MICROCOMPUTERS bHH « f i l m h it s u b is h k h ic h p t r / m p r o blE M 37412E 5-X X X F P » PROM VERSION of M 37412M 4-X XXFP DESCRIPTION PIN CONFIGURATION TOP VIEW The M37412E5-XXXFP is a single-chip microcomputer d e­

EXA18

Abstract: LC67F5006A EXD10 9709b N3004 FROM768K TQFP100 80728 FFFF0000 80729
Contextual Info: 注文コード No. N 8 0 7 2 LC67F5006A CMOS LSI FROM768Kバイト,SRAM32Kバイト内蔵 32ビット1チップ マイクロコントローラ 概要 ビットフラッシュ