P2F 17 Search Results

microwave antenna

Abstract: P2F-52 p2f 43 parabolic microwave antenna Andrew antennas microwave antenna andrew EIA-195-C
Contextual Info: Terrestrial Microwave Antenna Products P2F-52 Antenna 0.6m 2ft Parabolic Antenna A ndrew 52 series antennas are designed to meet the requirements of the 5 GHz unlicensed bands. This antenna uses proprietary technology to deliver superior electrical performance.

p2f 17

Contextual Info: NEW P 2F-17 1.71 - 1 .9 9 GHz & P2F-23B (2 .2 9 - 2.5 GHz) A nten n as W ide-Beam , Lo w W indload A n te n n a s for P C S , S p re a d S p e c tru m A p p lic a tio n s N o w PCS and Spread Spectrum system designers and operators can take advantage of high gain perform ance and reliable,

Contextual Info: KM684000A Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History Draft Date 0.0 Initial Draft October 26th 1993 Advance 0.1 Revise December 9th 1994 Prelim inary 0.2 Revise - Changed Operating current Icc2; 80m A -> 90mA

Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS

PHEMT marking code a

Abstract: FET P2F pHEMT FET marking l transistor code p2f pHEMT FET marking A
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

PM7530

Abstract: ISE Electronics Itron fg410E2 "Vacuum Fluorescent Display" Vacuum Fluorescent Display 38 PIN vacuum fluorescent display FG410E2 FG410E2-1B00 Itron Electronics 30 PIN vacuum fluorescent display
Contextual Info: 103 93t, 2 _ ifron Vacuum Fluorescent Display Rev. Version 00 Specification of Vacuum Fluorescent Display Type Name: FG410E2 Spec. No.: FG410E2-1B00 Revi sion Ltr Date 08/09/78 07/19/84 Description Initial Changed Changed Changed Changed Chk Apprvd

transistor P2F

Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
Contextual Info: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz

transistor SMD P2F

Abstract: atc600s smd p2f transistor smd marking code j6 PHEMT marking code a atc600 smd p2f FPD4000AF MIL-HDBK-263 Filtronic Components
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

transistor SMD P2F

Abstract: smd p2f transistor smd p2f transistor P2F P2F SMD TRANSISTOR MARKING P2F smd transistor marking 26 smd transistor p2f transistor marking p2f ON MARKING P2F
Contextual Info: Transistors SMD Type PNP Switching Transistor PXT2907A Features High current max. 600 mA Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage

transistor SMD P2F

Abstract: smd p2f transistor atc600s FPD4000AF PHEMT marking code a smd marking code j6 smd p2f pHEMT FET marking A transistor STD P2F smd code marking C8
Contextual Info: FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

transistor SMD P2F

Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
Contextual Info: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website

Contextual Info: Product specification PXT2907A Features High current max. 600 mA Low voltage (max. 60 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -5 V

Contextual Info: JfcKRL Wirewound Power Resistors M IL-R - M IL-R -2 6 KRL 39007 STYLE WATTAGE W OR KING M AXIM UM RA TING VOLTAGE RESISTANCE U V U V P & C SERIES D IM E N S IO N S LENG TH IN O HM S +.062 +.010 LEAD AW G DIAM ETER +.032 (+.010) C-1/4 .5 1.0 18 20 3.4K fi

Contextual Info: A COMPANY OF MODEL CP- X F W irewound Fuse Resistors C o m m e rc ia l, P o w er, A x ia l Lead FEATURES • • • • Fireproof inorganic construction Multiple physical configurations available Terminal strength - 7 pound pull test Special inorganic potting compound provides high thermal

Contextual Info: 1CT i 1CT lOOOpF 2 K V SHIELD ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P2-P3 (P2-F (P4-P5) (P4P7-P8) (P9-P10) 2.0 TURNS RATIO: (P2-P3) : (P4-P5) : (P7-P8) : (P9-P10) 350uH 350uH 350uH 350uH (J1 - J2 ) (J3 - J6 ) (J4 - J5 ) : (J7 - J8 ) : : : : 1CT 1CT

Contextual Info: 1 & KRL KRL STYLE C-l/4 P-l/2 C-l/2 (P-1A) C-1A C-1B (P-1C) C-1C C-1D (P-2) C-2 (P-2A) C-2A C-2B (P-2C) C-2C (P-2D) C-2D (P-2E) C-2E (P-2F) C-2F (P-3) C-3 C-4 (P-5) C-5 (P-6) C-6 C-7 C-7A C-10A P & C SERIES Wlrewound Power Resistors MIL-R-26 MIL-R39007 RW-70

P3F filtronic

Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B
Contextual Info: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency

101J

Abstract: P9-P10
Contextual Info: 1CT i 1CT lOOOpF 2KV /hr SHIELD ELECTRICAL SPECIFICATIONS: 1.0 INDUCTANCE: P (P2-F 2 -P 3 (P (P44 -P 5 ) (P7— P8) (P 9 -P 1 0 ) 2.0 TURNS RATIO: (P 2 -P 3 ) : (J 1 -J2 ) (P 4 -P 5 ) : (J 3 -J6 ) (P 7 -P 8 ) : (J 4 -J5 ) (P 9 -P 1 0 ) : (J 7 -J8 ) 350uH

Contextual Info: Philips Semiconductors Product specification PNP switching transistor PXT2907A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). APPLICATIONS DESCRIPTION 1 emitter 2 collector 3 base Switching and linear amplification. DESCRIPTION

transistor marking code 1325

Abstract: FPD2000AS filtronic Solid State
Contextual Info: FPD2000AS Datasheet v3.0 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz

Contextual Info: CMOS SRAM KM6164000C Family_ Document Title 256Kx16 bit Low Power CMOS Static RAM R evision No. H isto ry D raft Data R e m a rk 0.0 Initial d ra ft December 17, 1998 Prelim inary 1.0 Finalize April 17, 1999 Finalize The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

transistor marking code 1325

Abstract: R04003 ims pcb filtronic Solid State
Contextual Info: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency

transistor SMD P2F

Abstract: smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 FPD1000AS T491B105M035AS7015 filtronic Solid State
Contextual Info: FPD1000AS Datasheet v3.0 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency

Brooktree BT885

Abstract: Brooktree bt885 110 mhz bt812 equivalent BT812 bt885 67VO interlace
Contextual Info: MW 21 1993 Advance This document contains information on a product under development. The parametric information contains target parameters that are subject to change. Distinguishing Features • Three 256 x 8 Color Palette RAMs • 135 and 110 MHz Pipelined