Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    P14067EJ1V0D Search Results

    P14067EJ1V0D Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NE3210S01

    Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3210S01 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.


    Original     		NE3210S01 NE3210S01 NE3210S01-T1 NE3210S01-T1B PDF

    nec 0882 p

    Abstract: nec 0882 p 2
    Contextual Info: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELD EFFECT TRANSISTOR N E 3 2 1 0 S 0 1 X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.


    OCR Scan     		NE3210S01 NE3210S01-T1 P14067EJ1V0D NE3210S01 nec 0882 p nec 0882 p 2 PDF