P1403EV Search Results

Contextual Info: Single P-channel MOSFET ELM34411AA-N •General description ■Features ELM34411AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 14mΩ (Vgs=-10V) Rds(on) < 22mΩ (Vgs=-4.5V)

APW7141

Abstract: KAV60 LA-5141P KAV60 LS-5143P kb926 jlvds1 kav60 LA 5141P KB926D ISL6251 sis412 apl5607ki
Contextual Info: A B C D E ZZZ DAZ@ DAZ08400100 1 1 KAV60 LA-5141P LS-5141P/5142P/5143P ZZZ DA2@ DA60000BO10 LA-5141P REV1 M/B ZZZ DA2@ DA20000FM10 LS-5141P REV1 PWR/B Compal Confidential ZZZ DA2@ DA60000BU10 2 2 LS-5142P REV1 SDIO/B ZZZ DA2@ DA60000BT10 KAV60 Schematics Document

KB926

Abstract: LA-4781P ALC272X ISL6251 AR8132 KAV10 RTS5159 2N7002DW SLG8SP556VTR FBMA-L11-201209-221LMA30T
Contextual Info: A B C D E 1 1 Compal Confidential 2 2 KAV10 Schematics Document Intel Diamondville Processor with Calistoga 945GSE + DDRII + ICH7M 2008-12-30 3 3 REV: 1.0 4 4 2006/08/18 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2007/8/18

kav60 la-5141p

Abstract: APW7141 KAV60 APL3510B LS-5143P LA-5141P jlvds1 kav60 LA 5141P KB926D APL5607KI-TRG APL5607
Contextual Info: A B C D E ZZZ DAZ@ DAZ08400100 1 1 KAV60 LA-5141P LS-5141P/5142P/5143P ZZZ DA2@ DA60000BO10 LA-5141P REV1 M/B ZZZ DA2@ DA20000FM10 LS-5141P REV1 PWR/B Compal Confidential ZZZ DA2@ DA60000BU10 2 2 LS-5142P REV1 SDIO/B ZZZ DA2@ DA60000BT10 KAV60 Schematics Document

Contextual Info: Single P-channel MOSFET ELM34411AA-N •General description ■Features ELM34411AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-12A Rds(on) < 14mΩ (Vgs=-10V) Rds(on) < 22mΩ (Vgs=-4.5V)

P70N02LDG

Abstract: p0603bdg P60N03LDG PA102FDG P2503NPG P45N02LDG P0603BD P1703BDG P0403BDG P3004ND5G
Contextual Info: PRODUCT SELECTION GUIDE NIKO-SEM Surface-Mount And Through-Hole Power MOSFET Part Number BVDSS V VGS@ 2.5V RDS(ON) Max (mΩ) VGS@ VGS@ 4.5V 10V Ciss(Typ.) (pF) Qg(Typ.) RθJC VGS(th) (nc) ℃/W Max (V) ID (A) PD (W) TO-263 /220 N-Channel P45N02LSG P45N03LTG

SLG8SP556VTR

Abstract: KB926Qf KAV10 LA 4781P p1403evg p1403ev RTS5159 KB926 FCBGA998 AR8132 OZ813LN
Contextual Info: A B C D E 1 1 Compal Confidential 2 2 KAV10 Schematics Document Intel Diamondville Processor with Calistoga 945GSE + DDRII + ICH7M 2009-01-21 3 3 REV: 1.0 4 4 2006/08/18 Issued Date Compal Electronics, Inc. Compal Secret Data Security Classification 2007/8/18

KB926

Abstract: QG82945GSE 7A25000012 RTL8103EL 8103EL LA-5241P RTS5159 Compal Electronics KB926D FBMA-L11-201209-221LMA30T
Contextual Info: A B C D E ZZZ1 PCB 1 1 PJP1 45@ DCIN Compal Confidential 2 2 KTV00 Schematics Document Intel Diamondville Processor with Calistoga 945GSE + DDRII + ICH7M 3 3 2009-05-07 REV: 1.0 4 4 Compal Electronics, Inc. Compal Secret Data Security Classification 2006/08/18

Contextual Info: シングル P チャンネル MOSFET ELM34411AA-N •概要 ■特長 ELM34411AA-N は低入力容量 低電圧駆動、 低 ・ Vds=-30V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-12A ・ Rds on < 14mΩ (Vgs=-10V) ・ Rds(on) < 22mΩ (Vgs=-4.5V)

ELM34411AA

Contextual Info: 单 P 沟道 MOSFET ELM34411AA-N •概要 ■特点 ELM34411AA-N 是 P 沟道低输入电容，低工作电 •Vds=-30V 压，低导通电阻的大电流 MOSFET。 ·Id=-12A ·Rds on < 14mΩ (Vgs=-10V) ·Rds(on) < 22mΩ (Vgs=-4.5V) ■绝对最大额定值