P023 TRANSISTOR Search Results

computer smps circuit diagram

Abstract: uc3844 smps power supply PWM IC 14 PIN smps circuit diagram uc3844 PWM power supply application note T flip flop IC 24 volts smps uc3844 14 pin ic configuration uc3844 transformer design uc3844 reference smps
Contextual Info: LR745 Preliminary High Input Voltage SMPS Start-up Circuit Ordering Information Order Number / Package Maximum Input Voltage TO-92 TO-243AA Die 450V LR745N3 LR745N8 LR745ND *Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

A773* Transistor

Contextual Info: LR745 Preliminary High Input Voltage SMPS Start-up Circuit Ordering Information Order Number / Package Maximum Input Voltage TO-92 TO-243AA Die 450V LR745N3 LR745N8 LR745ND *S am e as SOT-89. For carrier tape reels specify P023 for 1,000 units or P 024 for 2 ,000 unils.

constant current source with 500mA

Abstract: DN2530 DN2530N3 DN2530N8 DN2530ND P024 p023 diode
Contextual Info: DN2530 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information * Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* DIE 300V 12Ω 200mA DN2530N3 DN2530N8 DN2530ND Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

MOSFET IGSS 100nA VDS 20V

Abstract: N-Channel Depletion-Mode MOSFET depletion n-channel mosfet to-92 N CHANNEL DEPLETION MOSFET N-Channel Depletion-Mode MOSFET high voltage TO-243AA 1000 volt mosfet to-92 depletion 400V power mosfet LND150N3 LND150N8
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

uc3844 transformer design

Abstract: p024 ZENER DIODE uc3844 14 pin ic configuration uc3844 transformer uc3844 reference smps T flip flop IC switch mode power supply using uc3844 uc3844 smps power supply p023 transistor LR745
Contextual Info: BACK LR745 Preliminary High Input Voltage SMPS Start-up Circuit Ordering Information Order Number / Package Maximum Input Voltage TO-92 TO-243AA Die 450V LR745N3 LR745N8 LR745ND *Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

VN3205

Abstract: DIODE S4 75a S4 75A S4 SOT-89 P024 VN3205N3 VN3205N6 VN3205N8 VN3205ND
Contextual Info: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON VGS(th) Order Number / Package BVDGS (max) (max) TO-92 14-Pin P-DIP TO-243AA* Dice† 50V 0.3Ω 2.4V VN3205N3 VN3205N6 VN3205N8 VN3205ND * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

p023 diode

Contextual Info: DN2530 Prelim inary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v d sx/ ^DS ON Id s s B^ dgx (max) (min) TO-92 TO-243AA* DIE 300V 12Q 200mA DN2530N3 DN2530N8 DN2530ND * Sam e as SOT-89. For carrier tape reels sp ecify P023 fo r 1,000 units o r P024 fo r 2,000 units.

VP3203N3

Abstract: P024 VP3203 VP3203N8 VP3203ND
Contextual Info: VP3203 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / RDS ON ID(ON) Order Number / Package BVDGS (max) (min) TO-92 TO-243AA* Dice† -30V 0.6Ω 4.0A VP3203N3 VP3203N8 VP3203ND *Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

p024 ZENER DIODE

Contextual Info: LR 745 Preliminary High Input Voltage SMPS Start-up Circuit Ordering Information Order Num ber / Package Maximum Input Voltage TO-92 TO-243AA Die 450V LR745N3 LR745N8 LR745ND *S am e as SOT-89. For c a rrie r ta p e reels sp ecify P023 for 1,000 u nits or P024 fo r 2,000 units.

Contextual Info: VP3203 U,1 r * P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON I d (ON) BVdgs (max) (min) TO-92 TO-243AA* Dicet -30V 0.6Q 4.0 A VP3203N3 VP3203N8 VP3203ND *S am e as SOT-89. For ca rrie r tape reels specify P023 fo r 1,000 units or P024 fo r 2,000 units.

Contextual Info: TN2501 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs b v dss/ R d S ON b v dgs (max) 18V 2.5Q If Ordering Information Order Number /Package TO-243AA* Dice+ VgS (th)* (max) 250mA 1.0V TN2501N8 TN2501ND ^S creening to 0.8V available. *S am e as SO T-89. For carrier tape reels sp ecify P023 fo r 1,000 units o r P024 fo r 2,000 units.

25M SOT89

Abstract: p023 diode VN3205
Contextual Info: VN3205 — _ N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package ^G S (th ) BVdgs (max) (max) TO-92 14-Pin P-DIP TO-243AA* Dicet 50V 0.3Q 2.4V VN3205N3 VN3205N6 VN3205N8 VN3205ND * S am e as SOT-89. For c a rrie r ta p e reels sp e cify P023 for 1,000 units o r P024 fo r 2,000 units.

IQ64BTQ100

Abstract: P005 IDS200 IQ320 p022 p041 p055 power transistor IQ32B IQ48 IQ64B
Contextual Info: IQ Family Data Sheet FEATURES DESCRIPTION • SRAM-based, in-system programmable • Switch Matrix — Non-Blocking — Identical and predictable delays — One-to-one, one-to-many and many-to-one connections • RapidConnect parallel interface for fast, incremental

transistor p06

Abstract: P08 transistor p023 transistor
Contextual Info: GFB2010A GFB2010A GFB2010A 12 X 12 2 1S COMPLIMENT MULTIPLIER GENERAL DESCRIPTION: THE GFB2010A MEGAFUNCTION IS A 12 X 12 2 1S COMPLEMENT MULTIPLIER WHICH GENERATES A 24-BIT PRODUCT. BY USING A MODIFIED BOOTH ALGORITHM, THIS MEGAFUNCTION GIVES A REASONABLE SPEED AND GATE COUNT.

transistor N14

Abstract: n7 transistor transistor n15 n10 transistor N4 transistor P-029 P08 transistor LSA2000 p023 transistor
Contextual Info: GFB2020A GFB2020A GFB2020A 16 X 16 2 'S COMPLIMENT MULTIPLIER GENERAL DESCRIPTION: THE GFB2020A MEGAFUNCTION IS A 16 X 16 2 'S COMPLEMENT MULTIPLIER WHICH GENERATES A 32-BIT PRODUCT. BY USING A MODIFIED BOOTH ALGORITHM, THIS MEGAFUNCTION GIVES A REASONABLE SPEED AND GATE COUNT.

p055 TRANSISTOR

Abstract: P029H H27 j1 3009 transistor P239 P239 9 318 ITT ZPY ZPY 91 ITT P109t P104t P182C
Contextual Info: & 1-Cube IQ Family Data Sheet Description Features The IQ devices are designed for use in switching and interconnect applications. In switching applications, these devices are used to dynamically switch one or more signals. When used in interconnect applications, the IQ devices

P057C

Abstract: P050C P052C P060C p055 power transistor P056C P062C P054C P005 p048
Contextual Info: " L # I-C u b e IQ Fam ily Data Sheet m F eatures D e s c r ip tio n • SRAM -based, in-system programmable The IQ family of SRAM -based bit-oriented switching devices is • Switch Matrix manufactured using 0.6|jm C M O S processes. T hese devices — Non-Blocking

Contextual Info: PSX Family Data Sheet FEATURES DESCRIPTION • SRAM-based, in-system programmable • Switch Matrix — Non-Blocking — Programmable Bus Widths of 4, 8, 16 and 32 bits — Identical and Predictable Delays — One-to-One, One-to-Many and Many-to-One Connections

p055 TRANSISTOR

Abstract: p055 power transistor Bus repeater
Contextual Info: PSX Family Data Sheet FEATURES DESCRIPTION • SRAM-based, in-system programmable • Switch Matrix — Non-Blocking — Programmable Bus Widths of 4, 8, 16 and 32 bits — Identical and Predictable Delays The PSX160, PSX128B and PSX96B are SRAM-based bus

RJP 3045

Abstract: Transistor z3p NP02 P104t str 1195 P022J I-CUBE iq P116C RP011 7805 v5
Contextual Info: M Ä ' I- C IQ Family Data Sheet u b e Features Description • Eight d evices ran gin g from 32 to 320 I / O Ports The IQ d evices are designed for use in sw itching and interconnect applications. In sw itching applications, these d evices are used to d ynam ically sw itch one or m ore signals. W hen

P108t

Abstract: p055 TRANSISTOR P210 P106t p055 power transistor pb416 P089 ior p237 ior p135 P017H
Contextual Info: À I Cube IQ Fam ily Data Sheet Features Description • E ig h t d e v ic e s r a n g in g fro m 32 to 320 I / O P o rts • S R A M - b a s e d P r o g r a m m in g fo r In - s ys te m R e c o n f ig u r a b ilit y • S w it c h M a t r ix A r c h ite c t u r e

TP2504N8

Abstract: A773 A773* Transistor P024 TP2502 TP2502ND TP2504ND 43AA
Contextual Info: S u p e r te x in c TP2502 TP2504 . Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B V oss/ R d S<ON ^ G S ith ) B V dgs max) (m ax) -20V 2.0Q -2.4V -40V 2.0CÌ -2.4V W n) (min) Order Num ber / Package TO-243AA*

p023 diode

Contextual Info: ^ ^ Si i I r ^ zj r* r TP2506 TP2510 Low Thrash o B 1[ i r * , •mimimu . .immilli _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) TO-243AA*

Contextual Info: ^ Supertax inc. DN2535 DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Orderina Informât on b v dsx/ R d S ON b v dgx (max) Order Number / Package loss (min) TO-39 TO-92 TO-220 TO-243AA* DIE — DN2535ND DN2540N8 DN2540ND 350V 25£i 150mA DN2535N2 DN2535N3