P023 TRANSISTOR Search Results

A773* Transistor

Contextual Info: LR745 Preliminary High Input Voltage SMPS Start-up Circuit Ordering Information Order Number / Package Maximum Input Voltage TO-92 TO-243AA Die 450V LR745N3 LR745N8 LR745ND *S am e as SOT-89. For carrier tape reels specify P023 for 1,000 units or P 024 for 2 ,000 unils.

p023 diode

Contextual Info: DN2530 Prelim inary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v d sx/ ^DS ON Id s s B^ dgx (max) (min) TO-92 TO-243AA* DIE 300V 12Q 200mA DN2530N3 DN2530N8 DN2530ND * Sam e as SOT-89. For carrier tape reels sp ecify P023 fo r 1,000 units o r P024 fo r 2,000 units.

p024 ZENER DIODE

Contextual Info: LR 745 Preliminary High Input Voltage SMPS Start-up Circuit Ordering Information Order Num ber / Package Maximum Input Voltage TO-92 TO-243AA Die 450V LR745N3 LR745N8 LR745ND *S am e as SOT-89. For c a rrie r ta p e reels sp ecify P023 for 1,000 u nits or P024 fo r 2,000 units.

Contextual Info: VP3203 U,1 r * P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON I d (ON) BVdgs (max) (min) TO-92 TO-243AA* Dicet -30V 0.6Q 4.0 A VP3203N3 VP3203N8 VP3203ND *S am e as SOT-89. For ca rrie r tape reels specify P023 fo r 1,000 units or P024 fo r 2,000 units.

Contextual Info: TN2501 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs b v dss/ R d S ON b v dgs (max) 18V 2.5Q If Ordering Information Order Number /Package TO-243AA* Dice+ VgS (th)* (max) 250mA 1.0V TN2501N8 TN2501ND ^S creening to 0.8V available. *S am e as SO T-89. For carrier tape reels sp ecify P023 fo r 1,000 units o r P024 fo r 2,000 units.

25M SOT89

Abstract: p023 diode VN3205
Contextual Info: VN3205 — _ N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package ^G S (th ) BVdgs (max) (max) TO-92 14-Pin P-DIP TO-243AA* Dicet 50V 0.3Q 2.4V VN3205N3 VN3205N6 VN3205N8 VN3205ND * S am e as SOT-89. For c a rrie r ta p e reels sp e cify P023 for 1,000 units o r P024 fo r 2,000 units.

IQ64BTQ100

Abstract: P005 IDS200 IQ320 p022 p041 p055 power transistor IQ32B IQ48 IQ64B
Contextual Info: IQ Family Data Sheet FEATURES DESCRIPTION • SRAM-based, in-system programmable • Switch Matrix — Non-Blocking — Identical and predictable delays — One-to-one, one-to-many and many-to-one connections • RapidConnect parallel interface for fast, incremental

transistor p06

Abstract: P08 transistor p023 transistor
Contextual Info: GFB2010A GFB2010A GFB2010A 12 X 12 2 1S COMPLIMENT MULTIPLIER GENERAL DESCRIPTION: THE GFB2010A MEGAFUNCTION IS A 12 X 12 2 1S COMPLEMENT MULTIPLIER WHICH GENERATES A 24-BIT PRODUCT. BY USING A MODIFIED BOOTH ALGORITHM, THIS MEGAFUNCTION GIVES A REASONABLE SPEED AND GATE COUNT.

Contextual Info: 1-Cube IQ Family Data Sheet Description Features • E ight d evices ra n g in g from 32 to 320 I / O P orts • SR A M -based P ro g ra m m in g for In-system R econfigurability • Sw itch M atrix A rchitecture • N on-blocking • P redictable & U niform D elays

transistor N14

Abstract: n7 transistor transistor n15 n10 transistor N4 transistor P-029 P08 transistor LSA2000 p023 transistor
Contextual Info: GFB2020A GFB2020A GFB2020A 16 X 16 2 'S COMPLIMENT MULTIPLIER GENERAL DESCRIPTION: THE GFB2020A MEGAFUNCTION IS A 16 X 16 2 'S COMPLEMENT MULTIPLIER WHICH GENERATES A 32-BIT PRODUCT. BY USING A MODIFIED BOOTH ALGORITHM, THIS MEGAFUNCTION GIVES A REASONABLE SPEED AND GATE COUNT.

RJP 3045

Abstract: Transistor z3p NP02 P104t str 1195 P022J I-CUBE iq P116C RP011 7805 v5
Contextual Info: M Ä ' I- C IQ Family Data Sheet u b e Features Description • Eight d evices ran gin g from 32 to 320 I / O Ports The IQ d evices are designed for use in sw itching and interconnect applications. In sw itching applications, these d evices are used to d ynam ically sw itch one or m ore signals. W hen

P108t

Abstract: p055 TRANSISTOR P210 P106t p055 power transistor pb416 P089 ior p237 ior p135 P017H
Contextual Info: À I Cube IQ Fam ily Data Sheet Features Description • E ig h t d e v ic e s r a n g in g fro m 32 to 320 I / O P o rts • S R A M - b a s e d P r o g r a m m in g fo r In - s ys te m R e c o n f ig u r a b ilit y • S w it c h M a t r ix A r c h ite c t u r e

TP2504N8

Abstract: A773 A773* Transistor P024 TP2502 TP2502ND TP2504ND 43AA
Contextual Info: S u p e r te x in c TP2502 TP2504 . Low Threshold Preliminary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B V oss/ R d S<ON ^ G S ith ) B V dgs max) (m ax) -20V 2.0Q -2.4V -40V 2.0CÌ -2.4V W n) (min) Order Num ber / Package TO-243AA*

p023 diode

Contextual Info: ^ ^ Si i I r ^ zj r* r TP2506 TP2510 Low Thrash o B 1[ i r * , •mimimu . .immilli _ P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) TO-243AA*

VN1304N2

Abstract: VN1306N2 VN1310N3
Contextual Info: ^ VN1304 ¿¿rsiLi N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON I d (ON) Order Number / Package BVdgs (max) (min) TO-243AA* TO-39 TO-92 40V 8Q 0.5A

Contextual Info: TN2535 TN2540 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v d ss/ ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) TO-243AA* DICE+ 350V 12Q 1.8V 1.0A — TN2535ND 400V 12Q 1.8V 1.0A TN2540N8 TN2540ND

Contextual Info: A VP1304 VP1306 VP1310 Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R DS ON ^D(ON) B V Dq s (max) (min) -40V 25n -60V -100V Order Number / Package TO-243AA* TO-39 TO-92 -0.25A — VP1304N2 VP1304N3 2512 -0.25A —

Contextual Info: TP2535 TP2540 £jUlt — P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information bv dss/ Order Number / Package ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) TO-92 TO-243AA* DICE+ -350V 25Q -2.4V -0.4A TP2535N3 — TP2535ND -400V 25Q -2.4V -0.4A

Contextual Info: ^ TP2516 TP2520 S j I I r . zj r r jij 'f 1 r I r*, •mimimu . .immilli _ Low T h rash o M P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min)

Contextual Info: TP0102 TP0104 S u p e r te x in c . Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R d s 0N ' , GS<th) b v dgs (max) (max) -20V 4.on -2.4V -40V 4.0Î2 -2.4V Order Number / Package JÎ BVdss/ TO-39 TO-92 TO-243AA* DICE* -0.85A

Contextual Info: TP2502 hm. tp 2504 I n w T h rftg h n lrB l Prelim inary P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON ^GS(th) I d (ON) Order Number / Package BVdgs (max) (max) (min) TO-243AA* DICE+ -20V 2.0Q -2.4V -2.0A — TP2502ND

Contextual Info: _ S ii ir m m m m tr iwitfuwi » zj r ^ 1i . r I . r »* TN2502 TN2504 Low Threshol , N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON ^GS(th) I d (ON) Order Number / Package BVdgs (max) (max) (min)

VP1304

Contextual Info: VP1304 VP1306 _ — — " ^ ^ v p 1 3 1 q P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON I d (ON) BVdgs (max) (min) TO-243AA* TO-39 TO-92 -40V 25Q -0.25A — VP1304N2 VP1304N3 -60V 25Q -0.25A — VP1306N2 VP1306N3 25Q

Contextual Info: _ S ii i r mmmmtr iw itfu w i zj » ^ 1r i r * , r r . TN2506 TN2510 . » N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON ^GS(th) I d (ON) Order Number / Package BVdgs (max) (max) (min) 60V 1.5Q 1.6V