LD1117
Abstract: LD1117 date code LD1117-18 ld1117c JESD97 LD1117D12TR LD1117S12TR LD1117-33
Contextual Info: LD1117 series Low drop fixed and adjustable positive voltage regulators Feature summary • Low dropout voltage 1V TYP. ■ 2.85V Device performances are suitable for SCSI-2 active termination ■ Output current up to 800 mA ■ Fixed output voltage of: 1.2V, 1.8V, 2.5V,
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ld1117o-220ot-223800ma+7ld1117 date codeld1117-18ld1117cjesd97ld1117d12trld1117s12trld1117-33
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STP9NC65
Abstract: STP9NC65FP
Contextual Info: STP9NC65 STP9NC65FP N-CHANNEL 650V - 0.75Ω - 8A TO-220/TO-220FP PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP9NC65 650 V < 0.90 Ω 8A STP9NC65FP 650 V < 0.90 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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stp9nc65stp9nc65fpo-220/to-220fpo-220+1o-220fp
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P11NM60AFP
Abstract: B11NM60A P11NM60A STP11NM60A STP11NM60AFP p11nm60 STB11NM60A-1
Contextual Info: STP11NM60A STP11NM60AFP - STB11NM60A-1 N-CHANNEL 600V - 0.4Ω - 11A TO-220/TO-220FP/I2PAK MDmesh Power MOSFET TYPE STP11NM60A STP11NM60AFP STB11NM60A-1 n n n n VDSS RDS on ID 600 V 600 V 600 V <0.45Ω <0.45Ω <0.45Ω 11 A 11 A 11 A TYPICAL RDS(on) = 0.4Ω
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stp11nm60astp11nm60afpstb11nm60a-1o-220/to-220fp/i2pak+5o-220p11nm60afpb11nm60ap11nm60ap11nm60
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STGD3NB60S
Abstract: STGP3NB60S SMD H2 T4
Contextual Info: STGP3NB60S STGD3NB60S N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH IGBT TYPE STGP3NB60S STGD3NB60S • ■ ■ ■ VCES VCE sat IC 600 V 600 V < 1.5 V < 1.5 V 3A 3A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT
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stgp3nb60sstgd3nb60so-220smd h2 t4 |
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D5NM60
Abstract: p8nm60fp p8n*m60fp STD5NM60T4 STP8NM60FP P8NM60 STD5NM60 STD5NM60-1 STP8NM60
Contextual Info: STP8NM60, STP8NM60FP STD5NM60, STD5NM60-1 N-CHANNEL 600V - 0.9Ω - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh Power MOSFET TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 • ■ ■ ■ ■ VDSS 600 V 600 V 600 V 600 V RDS on < < < < 1Ω 1Ω 1Ω 1Ω ID Pw
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stp8nm60stp8nm60fpstd5nm60std5nm60-1+7o-220/to-220fp/dpak/ipako-220d5nm60p8nm60fpp8n*m60fpstd5nm60t4p8nm60
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STP16NE06L
Abstract: STP16NE06LFP
Contextual Info: STP16NE06L STP16NE06L/FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET TARGET DATA TYPE V DSS R DS on ID STP16NE06L STP16NE06LFP 60 V 60 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY
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stp16ne06lstp16ne06l/fpstp16ne06lfp175oc |
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PB137
Abstract: pb137acv
Contextual Info: PB137 POSITIVE VOLTAGE REGULATOR FOR BATTERY CHARGER • ■ ■ ■ ■ REVERSE LEAKAGE CURRENT LESS THAN 10 µA THREE TERMINAL FIXED VERSION 13.7V OUTPUT CURRENT IN EXCESS OF 1.5A AVAILABLE IN ± 1% (AC) SELECTION AT 25°C TYPICAL DROPOUT VOLTAGE 2V TEMPERATURE RANGE 0°C TO 150°C
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pb137o-220pb137acv |
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STP7NB80FP
Abstract: STP7NB80
Contextual Info: STP7NB80 STP7NB80FP N - CHANNEL 800V - 1.2Ω - 6.5A - TO-220/TO-220FP PowerMESH MOSFET TYPE STP7NB80 STP7NB80FP • ■ ■ ■ ■ V DSS R DS on ID 800 V 800 V < 1.5 Ω < 1.5 Ω 6.5 A 6.5 A TYPICAL RDS(on) = 1.2 Ω EXTREMELY HIGH dv/dt CAPABILITY
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stp7nb80stp7nb80fpo-220/to-220fp |
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STGP12NB60H
Contextual Info: STGP12NB60H N-CHANNEL 12A - 600V − TO-220 PowerMESH IGBT TYPE STGP12NB60H • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.8 V 12 A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY
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stgp12nb60ho-22050khz |
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STP4NA40FI
Abstract: STP4NA40
Contextual Info: STP4NA40 STP4NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP4NA40 STP4NA40FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 400 V 400 V <2Ω <2Ω 4A 2.8 A TYPICAL RDS(on) = 1.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED
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stp4na40stp4na40fi100oco-220+1isowatt220
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STP11NB40FP
Abstract: STP11NB40
Contextual Info: STP11NB40 STP11NB40FP N - CHANNEL 400V - 0.48Ω - 10.7A - TO-220/TO-220FP PowerMESH MOSFET TYPE V DSS R DS on ID STP11NB40 STP11NB40FP 400 V 400 V < 0.55 Ω < 0.55 Ω 10.7 A 6.0 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dV/dt CAPABILITY
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stp11nb40stp11nb40fpo-220/to-220fp |
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STP38N06
Abstract: n mosfet depletion pspice model parameters NMOS depletion pspice model 19E-02
Contextual Info: STP38N06 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STP38N06 60 V < 0.03 Ω 38 A (*) • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.026 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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stp38n06100oc175oco-220+3n mosfet depletion pspice model parametersnmos depletion pspice model19e-02
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STP19N06L
Abstract: STP19N06LFI
Contextual Info: STP19N06L STP19N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP19N06L STP19N06LFI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY
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stp19n06lstp19n06lfi100oco-220+1isowatt220
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STGP20NB60K
Contextual Info: STGP20NB60K N-CHANNEL 20A - 600V - TO-220 PowerMesh IGBT PRELIMINARY DATA TYPE STGP20NB60K • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.8 V 20 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat ) LOW ON-LOSSES LOW GATE CHARGE
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stgp20nb60ko-220 |
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DSA00105971
Abstract: STP3NC50
Contextual Info: STP3NC50 N-CHANNEL 500V - 3Ω - 2.8A TO-220 PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP3NC50 500 V <4Ω 2.8 A TYPICAL RDS(on) = 3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
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stp3nc50o-220dsa00105971 |
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4NC60
Abstract: STB4NC60-1 STP4NC60 STP4NC60FP
Contextual Info: STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2.2Ω < 2.2Ω < 2.2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω
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stp4nc60stp4nc60fpstb4nc60-1o-220/to-220fp/i2pak+3o-220o-220fp4nc60
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IRF634
Abstract: IRF634FP
Contextual Info: IRF634 IRF634FP N-CHANNEL 250V - 0.38Ω - 8A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE IRF634 IRF634FP • ■ ■ VDSS RDS on ID 250 V 250 V < 0.45 Ω < 0.45 Ω 8A 8A TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3
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irf634irf634fpo-220/to-220fpo-220+1o-220fp
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STP14NF10FP
Abstract: STB14NF10 STP14NF10
Contextual Info: STB14NF10 STP14NF10 STP14NF10FP N-CHANNEL 100V - 0.115 Ω - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE STB14NF10 STP14NF10 STP14NF10FP • ■ ■ ■ ■ VDSS RDS on ID 100 V 100 V 100 V <0.13 Ω <0.13 Ω <0.13 Ω 15 A
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stb14nf10stp14nf10stp14nf10fpo-220/to-220fp/d2pak+2o-263o-220fp
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STB4NC60A-1
Abstract: STP4NC60A STP4NC60AFP
Contextual Info: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh II MOSFET TYPE STP4NC60A STP4NC60AFP STB4NC60A-1 • ■ ■ ■ ■ VDSS RDS on ID 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A TYPICAL RDS(on) = 1.8Ω
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stp4nc60astp4nc60afpstb4nc60a-1o-220/to-220fp/i2pak+2o-220o-220fp
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STP6NB80
Abstract: STP6NB80FP
Contextual Info: STP6NB80 STP6NB80FP N-CHANNEL 800V - 1.6Ω - 5.7A TO-220/TO-220FP PowerMesh MOSFET TYPE • ■ ■ ■ VDSS RDS on ID STP6NB80 800 V < 1.9 Ω 5.7 A STP6NB80FP 800 V < 1.9 Ω 5.7 A TYPICAL RDS(on) = 1.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
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stp6nb80stp6nb80fpo-220/to-220fp |
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W 20NM60
Abstract: 20nm60 STB20NM60-1 STP20NM60 STB20NM60 STP20NM60FP diode k 0368
Contextual Info: STP20NM60 - STP20NM60FP STB20NM60 STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET TYPE STP20NM60 STP20NM60FP STB20NM60 STB20NM60-1 • ■ ■ ■ ■ VDSS RDS on 600 600 600 600 < < < < V V V V 0.29 0.29 0.29 0.29 Ω
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stp20nm60stp20nm60fpstb20nm60stb20nm60-1+4o-220/fp/d2pak/i2pakw 20nm6020nm60diode k 0368
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stp6nc60fp
Abstract: 6NC60 STP6NC60 stp6nc60fp equivalent STB6NC60-1
Contextual Info: STP6NC60 - STP6NC60FP STB6NC60-1 N-CHANNEL 600V - 1Ω - 6A TO-220/TO-220FP/I2PAK PowerMESH II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP(B)6NC60(-1) 600 V < 1.2 Ω 6A STP6NC60FP 600 V < 1.2 Ω 6A TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY
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stp6nc60stp6nc60fpstb6nc60-1o-220/to-220fp/i2pak+46nc60o-220o-220fpstp6nc60fp equivalent
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LD1117-18
Abstract: ld1117c LD1117 LD1117XX12 LD1117XX18 LD1117XX18C LD1117XX25 LD1117XX25C LD1117XX28 LD1117XX30
Contextual Info: LD1117xx Low drop fixed and adjustable positive voltage regulators Features • Low dropout voltage 1 V typ. ■ 2.85 V device performances are suitable for SCSI-2 active termination ■ Output current up to 800 mA ■ Fixed output voltage of: 1.2 V, 1.8 V, 2.5 V,
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ld1117xxo-220ot-223ld1117+9ld1117-18ld1117cld1117xx12ld1117xx18ld1117xx18cld1117xx25ld1117xx25cld1117xx28ld1117xx30
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L4940
Abstract: L4940D2T10-TR L4940D2T12-TR L4940D2T5-TR L4940V5 L4940V85 L4940XX10 L4940XX12 L4940XX5 L4940XX85
Contextual Info: L4940XX5, L4940XX85 L4940XX10, L4940XX12 Very low drop 1.5 A regulator Features • Precise 5, 8.5, 10, 12 V outputs ■ Low dropout voltage 450 mV typ. at 1 A ■ Very low quiescent current ■ Thermal shutdown ■ Short circuit protection ■ Reverse polarity protection
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l4940xx5l4940xx85l4940xx10l4940xx12+8o-220l4940o-220fpl4940d2t10-trl4940d2t12-trl4940d2t5-trl4940v5l4940v85
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