P008B DIODE Search Results

P008B DIODE

Abstract: P008B BDW91 BDW92 npn darlington TO-39
Contextual Info: ZÜ SCS-THOM SON BDW91 Liera «! BDW92 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDW91 is a silicon epitaxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-39 metal case, intented for

P008B DIODE

Abstract: STN4NF03L
Contextual Info: STN4NF03L N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223 STripFET II POWER MOSFET TYPE VDSS RDS on ID STN4NF03L 30V <0.05Ω 6.5A • ■ TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE 2 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™ ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,

Contextual Info: SGS-THOMSON HDeæHLISTrisîQÜDlgS STN2N06 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTOR ADVANCE DATA TYPE STN2N06 V d ss R DS on I dcont 60 V < 0.250 £2 2 A . TYPICAL RDS(on) =0.21 Q . AVALANCHE RUGGED TECHNOLOGY . SOT-223 CAN BE WAVE OR REFLOW

P008B DIODE

Abstract: STN5PF20V 39 MARKING SOT223
Contextual Info: STN5PF20V P-CHANNEL 20V - 0.065Ω - 5A SOT-223 2.5V-DRIVE STripFET II POWER MOSFET TYPE STN5PF20V • ■ ■ ■ VDSS RDS on ID 20 V < 0.080 Ω (@4.5V) < 0.10 Ω (@2.5V) 5A 2 TYPICAL RDS(on) = 0.065Ω (@4.5V) TYPICAL RDS(on) = 0.085Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V)

STN2NF10

Contextual Info: STN2NF10 N-CHANNEL 100V - 0.23Ω - 2A SOT-223 STripFET II POWER MOSFET TYPE STN2NF10 • VDSS RDS on ID 100 V < 0.26 Ω 2A TYPICAL RDS(on) = 0.23 Ω 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"

P008B DIODE

Abstract: STN3PF06
Contextual Info: STN3PF06 P-CHANNEL 60V - 0.18Ω - 3A SOT-223 STripFET II POWER MOSFET PRELIMINARY DATA TYPE STN3PF06 • ■ ■ ■ ■ VDSS RDS on ID 60V <0.20Ω 2.5A 2 TYPICAL RDS(on) = 0.18Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

P008B DIODE

Abstract: STN3NF06L
Contextual Info: STN3NF06L N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STN3NF06L 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE

P008B DIODE

Abstract: STN1HNC60
Contextual Info: STN1HNC60 N-CHANNEL 600V - 7Ω - 0.4A - SOT-223 PowerMesh II MOSFET TYPE STN1HNC60 • ■ ■ ■ ■ VDSS RDS on ID 600 V <8Ω 0.4 A TYPICAL RDS(on) = 7Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED

P008B DIODE

Abstract: STN4NF03L
Contextual Info: STN4NF03L N-CHANNEL 30V - 0.039Ω - 4A SOT-223 STripFET POWER MOSFET TYPE STN4NF03L • ■ VDSS RDS on ID 30V <0.05Ω 4A 2 TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,

BDW91

Contextual Info: *7# S G S -T H O M S O N [MOeiMillLieraeiDIgS BDW 91 BDW 92 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BDW91 is a silicon epitaxial-base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-39 metal case, intented for

STN2NF10

Contextual Info: STN2NF10 N-CHANNEL 100V - 0.23Ω - 2A SOT-223 STripFET II POWER MOSFET TYPE STN2NF10 • VDSS RDS on ID 100 V < 0.26 Ω 2A TYPICAL RDS(on) = 0.23 Ω 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"

STN3NF06

Contextual Info: STN3NF06 N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY 2 DESCRIPTION

STN1NF10

Contextual Info: STN1NF10 N-CHANNEL 100V - 0.7Ω - 1A SOT-223 STripFET II POWER MOSFET TYPE STN1NF10 • ■ VDSS RDS on ID 100 V < 0.8 Ω 1A TYPICAL RDS(on) = 0.7 Ω EXCEPTIONAL dv/dt CAPABILITY 2 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique ”Single Feature Size ”

Contextual Info: STN3NF06 N-CHANNEL 60V - 0.07Ω - 3A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 3A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of

STN3NF06

Contextual Info: STN3NF06 N-CHANNEL 60V - 0.07Ω - 3A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 3A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED DESCRIPTION This Power MOSFET is the latest development of

Contextual Info: STN3NF06 N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET II POWER MOSFET TYPE STN3NF06 • ■ ■ ■ VDSS RDS on ID 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED AVALANCHE RUGGED TECHNOLOGY 2 DESCRIPTION

STN4NF03L

Abstract: P008B DIODE STN4NF03
Contextual Info: STN4NF03L N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223 STripFET II POWER MOSFET TYPE VDSS RDS on ID STN4NF03L 30V <0.05Ω 6.5A • ■ TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE 2 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™ ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance,

P008B DIODE

Abstract: STN1N20
Contextual Info: STN1N20 N - CHANNEL 200V - 1.2 Ω - 1A - SOT-223 POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STN1N20 • ■ ■ ■ ■ ■ V DSS R DS on I D CONT 200 V < 1.5 Ω 1A TYPICAL RDS(on) = 1.2 Ω AVALANCHE RUGGED TECHNOLOGY SOT-223 CAN BE WAVE OR REFLOW SOLDERED

STN4NE03

Contextual Info: STN4NE03 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE  " POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STN4NE03 30 V < 0.06 Ω 4A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.045 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

P008B DIODE

Abstract: STN1NB80
Contextual Info: STN1NB80 N - CHANNEL 800V - 16Ω - 0.2A - SOT-223 PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STN1NB80 800 V < 20 Ω 0.2 A • ■ ■ ■ ■ TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

P008B DIODE

Abstract: STN2N06
Contextual Info: STN2N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE STN2N06 • ■ ■ ■ ■ ■ V DSS R DS on I D CONT 60 V < 0.250 Ω 2A TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY SOT-223 CAN BE WAVE OR REFLOW SOLDERED AVAILABLE IN TAPE AND REEL ON

STN2N06

Contextual Info: STN2N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE ST N2N06 • ■ ■ ■ ■ ■ V DSS R DS on I D CONT 60 V < 0.250 Ω 2 A TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY SOT-223 CAN BE WAVE OR REFLOW SOLDERED AVAILABLE IN TAPE AND REEL ON

STN3PF06

Contextual Info: STN3PF06 P-CHANNEL 60V - 0.18Ω - 3A SOT-223 STripFET II POWER MOSFET PRELIMINARY DATA TYPE STN3PF06 • ■ ■ ■ ■ VDSS RDS on ID 60V <0.20Ω 2.5A 2 TYPICAL RDS(on) = 0.18Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

P008B DIODE

Abstract: STN7NF10
Contextual Info: STN7NF10 N-CHANNEL 100V - 0.055 Ω - 5A SOT-223 LOW GATE CHARGE STripFET II POWER MOSFET TYPE STN7NF10 • ■ VDSS RDS on ID 100 V < 0.065 Ω 5A TYPICAL RDS(on) = 0.055 Ω APPLICATION ORIENTED CHARACTERIZATION 2 1 2 3 SOT-223 DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and