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    P008B 1150 Search Results

    P008B 1150 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54112-806261150LF
    		Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical stacked header, Through Hole, Double Row, 26 Positions, 2.54mm (0.100in) Pitch. PDF
    54121-105091150LF
    		Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical stacked header, Through Hole, Single Row, 9 Positions, 2.54mm (0.100in) Pitch. PDF
    54112-811502400LF
    		Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical stacked header, Through Hole, Double Row, 50 Positions, 2.54mm (0.100in) Pitch. PDF
    54112-419221150LF
    		Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Stacking vertical header, Through Hole, Double Row, 22 Positions, 2.54mm (0.100in) Pitch. PDF
    54242-806101150LF
    		Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical stacked header, Surface Mount, Double Row, 10 Positions, 2.54mm (0.100in) Pitch. PDF

    P008B 1150 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P008B DIODE

    Abstract: STN1NB80
    Contextual Info: STN1NB80 N - CHANNEL 800V - 16Ω - 0.2A - SOT-223 PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STN1NB80 800 V < 20 Ω 0.2 A • ■ ■ ■ ■ TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		STN1NB80 OT-223 P008B DIODE STN1NB80 PDF

    N1NB80

    Abstract: N1NB STN1NB80 DD 31 N 800 K schematic diagram of crossover
    Contextual Info: STN1NB80  N - CHANNEL 800V - 16 Ω - 0.2A - SOT-223 PowerMESH MOSFET TYPE ST N1NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 20 Ω 0.2 A TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		STN1NB80 OT-223 N1NB80 N1NB80 N1NB STN1NB80 DD 31 N 800 K schematic diagram of crossover PDF

    STN1NB80

    Contextual Info: STN1NB80 N - CHANNEL 800V - 16 Ω - 0.2A - SOT-223 PowerMESH MOSFET TYPE V DSS R DS on ID STN1NB80 800 V < 20 Ω 0.2 A • ■ ■ ■ ■ TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		STN1NB80 OT-223 STN1NB80 PDF

    STN1NB80

    Abstract: MAX 233 INTERNAL CIRCUIT
    Contextual Info: STN1NB80 N - CHANNEL 800V - 16 Ω - 0.2A - SOT-223 PowerMESH MOSFET TYPE V DSS R DS on ID STN1NB80 800 V < 20 Ω 0.2 A • ■ ■ ■ ■ TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		STN1NB80 OT-223 STN1NB80 MAX 233 INTERNAL CIRCUIT PDF