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    P008B 1150 Search Results

    P008B 1150 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54242-111500950LF
    		Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical stacked header, Surface Mount, Double Row, 50 Positions, 2.54mm (0.100in) Pitch. PDF
    54121-107361150LF
    		Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded vertical stacked header, Through Hole, Single Row, 36 Positions, 2.54mm (0.100in) Pitch. PDF
    U90A1115001
    		Amphenol Communications Solutions ExpressPort QSFP+, High Speed Input Output Connectors, QSFP CAGE W ONE BARREL LP. PDF
    54122-828201150LF
    		Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded stacking vertical header, through hole, double Row, 20 position, 2.54mm (0.100in) pitch PDF
    10027011-506HTLF
    		Amphenol Communications Solutions BergStik®, Board to Board connector, Unshrouded Right Angled Header, Surface Mount, Single Row, 6 Positions, 2.54 mm (0.100in) Pitch. PDF

    P008B 1150 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    P008B DIODE

    Abstract: STN1NB80
    Contextual Info: STN1NB80 N - CHANNEL 800V - 16Ω - 0.2A - SOT-223 PowerMESH MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STN1NB80 800 V < 20 Ω 0.2 A • ■ ■ ■ ■ TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		STN1NB80 OT-223 P008B DIODE STN1NB80 PDF

    N1NB80

    Abstract: N1NB STN1NB80 DD 31 N 800 K schematic diagram of crossover
    Contextual Info: STN1NB80  N - CHANNEL 800V - 16 Ω - 0.2A - SOT-223 PowerMESH MOSFET TYPE ST N1NB80 • ■ ■ ■ ■ V DSS R DS on ID 800 V < 20 Ω 0.2 A TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		STN1NB80 OT-223 N1NB80 N1NB80 N1NB STN1NB80 DD 31 N 800 K schematic diagram of crossover PDF

    STN1NB80

    Contextual Info: STN1NB80 N - CHANNEL 800V - 16 Ω - 0.2A - SOT-223 PowerMESH MOSFET TYPE V DSS R DS on ID STN1NB80 800 V < 20 Ω 0.2 A • ■ ■ ■ ■ TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		STN1NB80 OT-223 STN1NB80 PDF

    STN1NB80

    Abstract: MAX 233 INTERNAL CIRCUIT
    Contextual Info: STN1NB80 N - CHANNEL 800V - 16 Ω - 0.2A - SOT-223 PowerMESH MOSFET TYPE V DSS R DS on ID STN1NB80 800 V < 20 Ω 0.2 A • ■ ■ ■ ■ TYPICAL RDS(on) = 16 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES


    Original     		STN1NB80 OT-223 STN1NB80 MAX 233 INTERNAL CIRCUIT PDF