P-TO 247 Search Results

Heatsinks sk 499

Abstract: Heatsinks sk 489 THFK 220
Contextual Info: clcktronik^ Retaining springs for transistors art. no. for su itable for transistor- heatsinks spring force [N] housing THFU 1 TO 218 TO 220 TO 247 TO 248 TO 3 P THFU 2 TO 218 TO 220 TO 247 TO 248 TO 3 P THFU 3 TO 218 TO 220 TO 247 TO 248 TO 3 P material:

Contextual Info: 16-Bit, 200 MSPS/250 MSPS Analog-to-Digital Converter AD9467 Preliminary Technical Data 75.5 dBFS SNR to 170 MHz at 250 MSPS @ 2.5 V p-p FS 74 dBFS SNR to 170 MHz at 250 MSPS @ 2.0 V p-p FS 90 dBFS SFDR to 300 MHz at 250 MSPS @ −1 dBFS at 2.5 V p-p FS

Contextual Info: Retaining springs for transistors a rt. no. fo r transistorhousing THF 409 220 1 THF 409 220 2 THF 249 suitable fo r heatsinks TO TO TO TO TO 218 220 3 P 247 248 SK 4 0 9 SK 4 5 9 TO TO TO TO TO 218 220 3 P 247 248 SK 145 SK 185 SK 4 3 7 TO 2 2 0 FK 2 4 9

Contextual Info: FAST RECOVERY DIODE 60A/200V/trr : 50nsec KCF60A20E FEATURES o Sim ilar to TO-247AC x 2 Case o Dual Diodes-Cathode Common O U ltra-Fast Recovery OLow F orw ard V oltage Drop o High Surge Capability A p p ro x . N et W eigh t : 30 Grams MAXIMUM RATINGS '\T y p e

Thomson-CSF POLYESTER capacitors

Abstract: Thomson-CSF POLYESTER capacitors TPC capacitor polyester 1u 630v Thomson-CSF capacitors Thomson-CSF Thomson-CSF passive components uk ah 102 m capacitor thomson Metallized Polyester Film Capacitor Thomson-csf capacitor Thomson-CSF film capacitors
Contextual Info: Metallized polyester film capacitors BG range - 10 mm to 27.5 mm pitch Contents Characteristics of the metallized polyester film capacitor p. 2 Boxed metallized polyester capacitor BG serie range p. 4 Packaging p. 6 How to order p. 7 Worldwide sales offices

NTC 4,7

Abstract: ntc 4.7 NTC Inrush Current Limiters Thermistor ntc 2.5 ohm Thermistor cross reference IEC 68-2-6 NTC 2.5 UA 741 datasheet NTC 4,7 S M i2 200-5
Contextual Info: NTC Thermistors Inrush current limiters Contents NTC General Characteristics p. 2 NTC as inrush current limiter p. 4 How to order p. 5 Technical data p. 6 Taping characteristics p. 14 Packaging p. 16 Manufacturing process and quality assurance p. 18 Reliability

MS3191-1

Abstract: CCT-408M 995-0001-761 031-1046-002 S-249-1632-000 S-249-1400-000 P-249-1399-000 S-249-1634-000 DPX2-34 031-9206-004
Contextual Info: DPX DPX ARINC 404 How to Order DPX DPX D P X3/D P X4 3 4 ME ME -57 -57 P P -57 P -57 P -57 •57 P P -57 P - 34 - 34 -00 01 -00 01 SERIES PREFIX SHELL-CLASS -CONTACT ARRANGEMENT Side A CONTACT TYPE-CONTACT ARRANGEMENT (Side B) CONTACT TY P E -SERIES PREFIX

upc 1185 h

Abstract: mobis Delay linear sweep generator using 555 timer Anritsu ML524B operation manual for vip tracking gsm and gps technology 26UA42 MU909014A1 nokia 2700 classic circuit diagram MF2400C MA8120E
Contextual Info: Outline of Anritsu Corporation p.2 Quality, Reliability Assurance System, and Effort for Environmental Considerations p.3 How to Use This Catalog p.4 Sales, Shipping, and Service Information p.5 Sales Network p.6 Index p.7 Model Number Index p.9 New Products Descriptions

SR2020P

Abstract: SR2020PT sr2015
Contextual Info: E SR2020PT - SR20150PT TAIWAN SEMICONDUCTOR 20.0 AMPS. Schottky Barrier Rectifiers TO-3 P/TO-247AD RoHS COM PLIANCE Trir-— : ! ny.cj. - a Features <•> ❖ <5*<■ ■fr ❖ <5*-4- <- Dual rectifier construction. positive ce nter-ta p Plastic pack fi-ga has U nderwritars La boratory

F1S30P06

Abstract: 30p06
Contextual Info: RFG30P06, RFP30P06, r f 1 S30P06, RF1S30P06SM HARRIS S E M I C O N D U C T O R 30A, 60V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs March 1995 Features Packages JEDEC STYLE TO-247 • 3 0A , 60V • rDS ON = 0-06512 • T e m p e ra tu re C o m p e n s atin g P S P IC E M odel

Contextual Info: SCHOTTKY BARRIER DIODE KCQ120A06E 120A/60V FEA TU R ES o S im ila r to TO-247AC X 2 Case O D u a l Diodes —C athode Com m on O L o w F o rw a rd V o lta g e Drop o L o w P o w e r Loss, H ig h E ffic ie n c y o H ig h Su rg e C a p a b ility A p p ro x .

f25nm60n

Abstract: P25NM60 w25nm60 F25NM60 P25NM60N w25nm60n F25NM TO247 package dissipation p25n
Contextual Info: STB25NM60Nx - STF25NM60N STP25NM60N - STW25NM60N N-channel 600 V, 0.130 Ω , 21 A, MDmesh II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247 Features RDS on max VDSS (@Tjmax) Type ID 3 3 ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P b e O Application

Contextual Info: + 85°C Low Profile Radial Lead Aluminum Electrolytic Capacitors For all g e n e ra l p u r p o s e a p p li c a ti o n s FEATURES Voltage range: 6.3WVDC to 50WVDC Solvent tolerant end seals standard Low Profile Capacitance range: 22 fjF to 10,000 fjF SPECIFICATIONS

Contextual Info: Fast Recovery Diodes International IO R Rectifier Fast Recovery Diodes in D-Pak, D 2Pak, TO-220 and TO-247 Packages QUIET/A? Series 600V, 60ns IF ¡AVG: P a c k a g e S ty le V o ita a e G r a d e 200 tO A 10A D -P ak D ?-Pak T O -22 0A C % # H EW F02S 1.1V

Contextual Info: +105°C High Frequency Low Impedance Radial Lead Aluminum Electrolytic Capacitors F o r all a p p l i c a t i o n s i n c l u d i n g s w i t c h i n g p o w e r s u p p l i e s FEATURES • Highest Reliability, up to 5000 hours ■ Voltage range: 6.3WVDC to 63 WVDC

28N30

Contextual Info: ÖIXYS HiPerFAST IGBT IXGH 28N30 IXGT 28N30 V CES ^C2 V C E s a t ty p t fi(typ) 300 V 56 A 1.6 V 180 ns P re lim in a ry d ata sheet Symbol Test Conditions TO-247 AD T, = 25° C to 150° C 300 V T.J = 25° C to 150° C: RG „t = 1 MQ 300 V Continuous

DDR2-533

Abstract: JESD51-2
Contextual Info: HY5PS2G431M[P] HY5PS2G831M[P] 2Gb DDR2 SDRAM DDP HY5PS2G431M[P] HY5PS2G831M[P] This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: HY5PS2G431M[P] HY5PS2G831M[P] 2Gb DDR2 SDRAM DDP HY5PS2G431M[P] HY5PS2G831M[P] This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

JESD51-2

Abstract: DDR2-533 DDR2-667 AL-200
Contextual Info: HY5PS2G431M[P] HY5PS2G431M[P] 2Gb DDR2 SDRAM DDP HY5PS2G431M[P] HY5PS2G831M[P] This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

60P06E

Abstract: 6b69e RS111
Contextual Info: RFG60P06E m HARRIS S E M I C O N D U C T O R 60A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancem ent-M ode Power MOSFET J a n u a ry 199 6 Features Package JEDEC STYLE TO-247 • 6 0 A ,6 0 V SOURCE • * *D S O N = 0 . 0 3 0 1 2 • T e m p e ra tu re C o m p e n s a tin g P S P IC E M o d e l

transistor P 112

Abstract: transistor c 144 marking f5 sot-89 marking 149 A 144 transistor transistor 136 138 140
Contextual Info: Transistors Surface Mounted Leaded P ack ag es Available- -60 P ack ag es Available- -110 POWER MOSFET- -61 POWER MOSFET— -112 61 MPT • CPT F5 • PSD Transistors- 63 CPT • MRT • HRT • T0-220FP • TO-247

hynix dram numbering

Abstract: DDR2-533 DDR2-667 JESD51-2
Contextual Info: HY5PS2G431M[P] HY5PS2G831M[P] 2Gb DDR2 SDRAM DDP HY5PS2G431M[P] HY5PS2G831M[P] This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.

Contextual Info: 2 4 5 7 REVISIONS ISS d e s c r i p t i q n \p e r ZONE REQUEST\DATE 4 - 0 .6 SO. 1.1 RGB -CONNECTOR -PA CKA G ING D IM E N S IO N S ARE IN AC C O R D IN G IN TRAY TO OT'r: DIN 100 MOUNTING 41-626 WITH C O M M P PC IAL 02 247 PART NUMBER AND D AT P Âmahen

Contextual Info: + 85°C Standard Axial Lead Aluminum Electrolytic Capacitors F o r all g e n e r a l p u r p o s e a p p l i c a t i o n s FEATURES High ripple current ratings Wide capacitance range: 0.47 fjF to 22000 ¡j F Wide voltage range: 10 WVDC to 450 WVDC Solvent tolerant end seals standard