P-CHANNEL SC89 Search Results

P-CHANNEL SC89 Result Highlights (5)

Part	Manufacturer	Description	Download
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P	PDF
TLP292-4	Toshiba Electronic Devices & Storage Corporation	Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16	Datasheet
TLP295-4	Toshiba Electronic Devices & Storage Corporation	Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16	Datasheet
TC7PCI3212MT	Toshiba Electronic Devices & Storage Corporation	2 Differential Channel, 2:1 multiplexer/demultiplexer, SPDT, TQFN20, -40 to 85 degC	Datasheet
TLP294-4	Toshiba Electronic Devices & Storage Corporation	Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16	Datasheet

P-CHANNEL SC89 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of	Original	SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402	PDF
si1029x Contextual Info: Si1029X_ Vishay Siliconix New Product Complementary N- and P-Channel 60-V D-S MOSFET TrenchFE T PRODUCT SUMMARY M OSFETs VDS(V) N-Channel P-Channel 60 -60 rDS(on) (Q ) l0 (m A ) 1.40 @ Vqq = 10 V 500 3 @ VGS = 4.5 V	OCR Scan	Si1029X S-03518-- 11-Apr-01 SM029X S-03518--Rev. 11-Apr-01	PDF
7130-1 transistor Abstract: TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X Contextual Info: SM035X_ Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY M O SFETs V d s (V ) N-Channel P-Channel 20 -20 FEATURES rDS(on) ( ß ) lD (m A ) 5 @ VGs = 4.5 V 200	OCR Scan	SM035X_ S-02367--Rev. 23-Oct-OO 7130-1 transistor TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X	PDF
Contextual Info: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches	Original	Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Si1016CX www.vishay.com Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 -20 RDS(on) (Ω) ID (A) 0.396 at VGS = 4.5 V 0.50 Qg (TYP.) • High-side switching • Ease in driving switches	Original	Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SC-89 Abstract: Si1016X Contextual Info: Si1016X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 1.2 @ VGS = –4.5 V –400	Original	Si1016X 08-Apr-05 SC-89	PDF
SC-89 Abstract: Si1029X Contextual Info: Si1029X New Product Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel –60 rDS(on) (W) ID (mA) 1.40 @ VGS = 10 V 500 3 @ VGS = 4.5 V 200 4 @ VGS = –10 V –500 8 @ VGS = –4.5 V –25 FEATURES	Original	Si1029X 08-Apr-05 SC-89	PDF
SC-89 Abstract: Si1016X Contextual Info: Si1016X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 0.70 @ VGS = 4.5 V 600 0.85 @ VGS = 2.5 V 500 1.25 @ VGS = 1.8 V 350 1.2 @ VGS = –4.5 V –400	Original	Si1016X S-03104--Rev. 08-Feb-01 SC-89	PDF
SC-89 Abstract: Si1029X Contextual Info: Si1029X New Product Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel –60 rDS(on) (W) ID (mA) 1.40 @ VGS = 10 V 500 3 @ VGS = 4.5 V 200 4 @ VGS = –10 V –500 8 @ VGS = –4.5 V –25 FEATURES	Original	Si1029X S-03518--Rev. 11-Apr-01 SC-89	PDF
Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400	Original	Si1016X 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400	Original	Si1016X 2002/95/EC OT-563 SC-89 11-Mar-11	PDF
Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400	Original	Si1016X 2002/95/EC OT-563 SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400	Original	Si1016X 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SC-89 Abstract: Si1016X Contextual Info: Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 20 - 20 RDS(on) () ID (mA) 0.70 at VGS = 4.5 V 600 0.85 at VGS = 2.5 V 500 1.25 at VGS = 1.8 V 350 1.2 at VGS = - 4.5 V - 400	Original	Si1016X 2002/95/EC OT-563 SC-89 11-Mar-11 SC-89	PDF

SPP1013 Abstract: SC-89 SPP1013S52RG P-CHANNEL SPP1013S52RGB Contextual Info: SPP1013 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state	Original	SPP1013 SPP1013 -20V/0 SC-89 SPP1013S52RG P-CHANNEL SPP1013S52RGB	PDF
20V P-Channel Power MOSFET high current Abstract: P-CHANNEL SC89 Switching Power P-channel SC-89 SPP1013 SPP1013S52RG P-CHANNEL Contextual Info: SPP1013 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1013 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state	Original	SPP1013 SPP1013 -20V/0 20V P-Channel Power MOSFET high current P-CHANNEL SC89 Switching Power P-channel SC-89 SPP1013S52RG P-CHANNEL	PDF
SI1016CX Abstract: sot-563 MOSFET D1 SI-101 Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V	Original	Si1016CX 2002/95/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 sot-563 MOSFET D1 SI-101	PDF
SC-89 Abstract: Si1029X Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •	Original	Si1029X SC-89 08-Apr-05 SC-89	PDF
Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V	Original	Si1016CX 2002/95/EC 11-Mar-11	PDF
Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V	Original	Si1016CX 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
MARKING 4A sot-563 Abstract: P-channel Dual MOSFET VGS -25V 035a lcd Contextual Info: SPP1023 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP1023 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state	Original	SPP1023 SPP1023 MARKING 4A sot-563 P-channel Dual MOSFET VGS -25V 035a lcd	PDF
"MARKING CODE M" Abstract: SC-89 Si1035X Contextual Info: Si1035X New Product Vishay Siliconix Complementary N- and P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 5 @ VGS = 4.5 V 200 7 @ VGS = 2.5 V 175 9 @ VGS = 1.8 V 150 10 @ VGS = 1.5 V 50 8 @ VGS = –4.5 V	Original	Si1035X S-03201--Rev. 12-Mar-01 "MARKING CODE M" SC-89	PDF
Contextual Info: New Product Si1016CX Vishay Siliconix Complementary N- and P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) 0.396 at VGS = 4.5 V 0.5 0.456 at VGS = 2.5 V 0.2 0.546 at VGS = 1.8 V 0.2 0.760 at VGS = 1.5 V	Original	Si1016CX 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SI1029X-T1GE3 Abstract: SC-89 Si1029X Contextual Info: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •	Original	Si1029X SC-89 18-Jul-08 SI1029X-T1GE3 SC-89	PDF

P-CHANNEL SC89 Search Results

P-CHANNEL SC89 Result Highlights (5)

P-CHANNEL SC89 Datasheets Context Search

si1029x

7130-1 transistor

SC-89

SC-89

SC-89

SC-89

SC-89

SPP1013

20V P-Channel Power MOSFET high current

SI1016CX

SC-89

MARKING 4A sot-563

"MARKING CODE M"

SI1029X-T1GE3