P-CHANNEL MOSFET CODE AS Search Results

Contextual Info: STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 10 A, P-channel 30 V, 0.024 Ω typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet - production data Features Order code Channel VDS 30 V P 1 0.03 Ω @ 10 V 8A • RDS on * Qg industry benchmark

Contextual Info: STS8C5H30L N-channel 30 V, 0.018 Ω typ., 8 A, P-channel 30 V, 0.045 Ω typ., 5 A Power MOSFET in a SO-8 package Datasheet - production data Features Order code Channel VDS 5 N 8 STS8C5H30L 30 V P RDS on max ID 0.022 Ω 8A 0.055 Ω 5A • Conduction losses reduced

DSS SOT23

Abstract: marking code MV mosfet SOT23 Diode SOT-23 marking 3V lp0801k1
Contextual Info: LP0801 Supertex inc. Low Threshold Preliminary P-Channel Enhancement-Mode Lateral MOSFET Ordering Information p Order Number / Package B V dcs max (min) VGSflh) (max) TO-236AB* Die P8U * -16.5V 120 -200mA -1.0V LP0801K1 LP0801ND where * = 2-week alpha date code

H9435S

Contextual Info: HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9435S • P-Channel Enhancement-Mode MOSFET -30V, -5.3A 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features

TP0610K-T1-E

Abstract: TP0610K-T1-E3
Contextual Info: TP0610K Vishay Siliconix P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS(th) (V) ID (mA) - 60 6 at VGS = - 10 V - 1 to - 3 - 185 TO-236 (SOT-23) G Marking Code: 6Kwll 6K = Part Number Code for TP0610K w = Week Code ll = Lot Traceability

Contextual Info: STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 10 A, P-channel 30 V, 0.024 Ω typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet - production data Features Order code VDS STL40C30H3LL N-channel RDS(on) max ID 0.021 Ω @ 10 V 10 A

Si5435DC

Abstract: Si5435DC-T1
Contextual Info: Si5435DC Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (Ω) ID (A) 0.050 @ VGS = -10 V -5.6 0.080 @ VGS = -4.5 V -4.0 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BE XX Lot Traceability and Date Code Part # Code

MTM23123

Contextual Info: MTM23123 Silicon P-channel MOSFET For switching • Overview  Package MTM23123 is P-channel MOS FET for load switch circuits.  Code SMini3-G1-B  Pin Name 1: Gate 2: Source 3: Drain  Features  Low voltage drive 2.5 V, 4 V  Realization of low on-resistance, using extremely fine process

marking c08

Abstract: CMLDM8002A CMLDM8002AJ MARKING CODE 24 TRANSISTOR
Contextual Info: Central CMLDM8002A CMLDM8002AJ SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MARKING CODE: CMLDM8002A: C08 CMLDM8002AJ: CJ8 TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8002A and CMLDM8002AJ are dual chip Enhancement-mode

g 995

Contextual Info: 32E D m 023b32Q OOlbôQ? 3 H S I P BF 995 Silicon N Channel MOSFET Tetrode SIEMENS/ SPCLi SEMICONDS _ For FM and VHF TV input and mixer stages Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF 995 MB Q62702-F872

2SJ0582

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SJ0582 Silicon P-channel power MOSFET • Features ■ Package • Avalanche energy capability guaranteed • High-speed switching • No secondary breakdown • Code U-G2 • Pin Name

Contextual Info: STT7P2UH7 P-channel 20 V, 0.0195 Ω typ., 7 A STripFET VII DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data Features SOT23-6L •  Figure 1: Internal schematic diagram Order code VDS RDS on max ID STT7P2UH7 20 V 0.0225 Ω @ 4.5 V

LP0801

Contextual Info: LP0801 Low Threshold Preliminary P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package Product marking for SOT-23: TO-236AB* P8U❋ -16.5V 12Ω -200mA -1.0V LP0801K1 where ❋ = 2-week alpha date code

Contextual Info: STL30P3LLH6 P-channel 30 V, 0.024 Ω typ., 9 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet − preliminary data Features Order code VDS RDS on max ID PTOT STL30P3LLH6 30 V 0.03 Ω 9A 4.8 W • RDS(on) * Qg industry benchmark

Contextual Info: STL6P3LLH6 P-channel 30 V, 0.024 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet − preliminary data Features Order code VDS RDS on max ID PTOT STL6P3LLH6 30 V 0.03 Ω 6A 2W • RDS(on) * Qg industry benchmark

powerflat 5x6

Contextual Info: STL42P6LLF6 P-channel 60 V, 0.02 Ω typ., 9 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - target specification Features •    Order code VDSS RDS on max. ID STL42P6LLF6 60 V 0.028 Ω @ 10 V 9A RDS(on)* Qg industry benchmark

Contextual Info: STL30P3LLH6 P-channel 30 V, 0.024 Ω typ., 30 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet − preliminary data Features Order code VDS RDS on max ID PTOT STL30P3LLH6 30 V 0.03 Ω 30 A 4W • RDS(on) * Qg industry benchmark

Contextual Info: STL6P2UH7 P-channel 20 V, 0.023 Ω typ., 6 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package Datasheet − target specification Features 1 2 Order code VDS RDS on max ID STL6P2UH7 20 V 0.029 Ω @ 4.5 V 6A 3 • Extremely low on-resistance RDS(on)

Contextual Info: STS6P3LLH6 P-channel 30 V, 0.024 Ω typ., 6 A, STripFET VI DeepGATE™ Power MOSFET in a SO-8 package Datasheet - preliminary data Features Order code VDS RDS on max ID STS6P3LLH6 30 V 0.03 Ω 6A • RDS(on)* Qg industry benchmark • Extremely low on-resistance RDS(on)

Contextual Info: STS6P3LLH6 P-channel 30 V, 0.024 Ω typ., 6 A, STripFET VI DeepGATE™ Power MOSFET in a SO-8 package Datasheet — preliminary data Features Order code VDS RDS on max ID STS6P3LLH6 30 V 0.036 Ω 6A • RDS(on)* Qg industry benchmark ■ Extremely low on-resistance RDS(on)

Si2309DS

Abstract: Si2309DS-T1 7083
Contextual Info: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View Si2309DS (A9)* * Marking Code

Contextual Info: STL9P2UH7 P-channel 20 V, 0.0195 Ω typ., 9 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Features 1 •  2 3 Order code VDS RDS on max ID STL9P2UH7 20 V 0.0225 Ω @ 4.5 V 9A Extremely low on-resistance RDS(on)

SI5435BDC

Abstract: Si5435BDC-T1
Contextual Info: Si5435BDC New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.045 @ VGS = −10 V −5.9 0.080 @ VGS = −4.5 V −4.4 D TrenchFETr Power MOSFETS 1206-8 ChipFETr S 1 D D G D D D D G S Marking Code

Contextual Info: STT6P2UH7 P-channel 20 V, 0.023 Ω typ., 6 A STripFET VII DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet − target specification Features Order code VDS RDS on max ID STT6P2UH7 20 V 0.029 Ω @ 4.5 V 6A • Ultra logic level • Extremely low on-resistance RDS(on)