P-CHANNEL MOSFET CODE AS Search Results
P-CHANNEL MOSFET CODE AS Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| ICL7667MJA/883B |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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| AM9513ADIB |
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AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 |
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| CA3130T |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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| CA3130AT/B |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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P-CHANNEL MOSFET CODE AS Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 10 A, P-channel 30 V, 0.024 Ω typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet - production data Features Order code Channel VDS 30 V P 1 0.03 Ω @ 10 V 8A • RDS on * Qg industry benchmark |
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STL40C30H3LL DocID023874 | |
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Contextual Info: STS8C5H30L N-channel 30 V, 0.018 Ω typ., 8 A, P-channel 30 V, 0.045 Ω typ., 5 A Power MOSFET in a SO-8 package Datasheet - production data Features Order code Channel VDS 5 N 8 STS8C5H30L 30 V P RDS on max ID 0.022 Ω 8A 0.055 Ω 5A • Conduction losses reduced |
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STS8C5H30L DocID10809 | |
DSS SOT23
Abstract: marking code MV mosfet SOT23 Diode SOT-23 marking 3V lp0801k1
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OCR Scan |
LP0801 -200mA O-236AB* LP0801K1 LP0801ND OT-23: OT-23. DSS SOT23 marking code MV mosfet SOT23 Diode SOT-23 marking 3V | |
H9435SContextual Info: HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9435S • P-Channel Enhancement-Mode MOSFET -30V, -5.3A 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features |
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MOS200509 H9435S H9435S Un150oC 200oC 183oC 217oC 260oC 245oC | |
TP0610K-T1-E
Abstract: TP0610K-T1-E3
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TP0610K O-236 OT-23) TP0610K 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TP0610K-T1-E TP0610K-T1-E3 | |
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Contextual Info: STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 10 A, P-channel 30 V, 0.024 Ω typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet - production data Features Order code VDS STL40C30H3LL N-channel RDS(on) max ID 0.021 Ω @ 10 V 10 A |
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STL40C30H3LL DocID023874 | |
Si5435DC
Abstract: Si5435DC-T1
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Si5435DC Si5435DC-T1 S-21251--Rev. 05-Aug-02 | |
MTM23123Contextual Info: MTM23123 Silicon P-channel MOSFET For switching • Overview Package MTM23123 is P-channel MOS FET for load switch circuits. Code SMini3-G1-B Pin Name 1: Gate 2: Source 3: Drain Features Low voltage drive 2.5 V, 4 V Realization of low on-resistance, using extremely fine process |
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MTM23123 MTM23123 | |
marking c08
Abstract: CMLDM8002A CMLDM8002AJ MARKING CODE 24 TRANSISTOR
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CMLDM8002A CMLDM8002AJ OT-563 CMLDM8002A: CMLDM8002AJ: CMLDM8002A CMLDM8002AJ CMLDM8002AJ, 500mA marking c08 MARKING CODE 24 TRANSISTOR | |
g 995Contextual Info: 32E D m 023b32Q OOlbôQ? 3 H S I P BF 995 Silicon N Channel MOSFET Tetrode SIEMENS/ SPCLi SEMICONDS _ For FM and VHF TV input and mixer stages Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package BF 995 MB Q62702-F872 |
OCR Scan |
023b32Q Q62702-F872 Q62702-F936 23b32Ã g 995 | |
2SJ0582Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SJ0582 Silicon P-channel power MOSFET • Features ■ Package • Avalanche energy capability guaranteed • High-speed switching • No secondary breakdown • Code U-G2 • Pin Name |
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2002/95/EC) 2SJ0582 J0582 2SJ0582 | |
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Contextual Info: STT7P2UH7 P-channel 20 V, 0.0195 Ω typ., 7 A STripFET VII DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet - production data Features SOT23-6L • Figure 1: Internal schematic diagram Order code VDS RDS on max ID STT7P2UH7 20 V 0.0225 Ω @ 4.5 V |
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OT23-6L OT23-6L DocID025142 | |
LP0801Contextual Info: LP0801 Low Threshold Preliminary P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) VGS(th) (max) Order Number / Package Product marking for SOT-23: TO-236AB* P8U❋ -16.5V 12Ω -200mA -1.0V LP0801K1 where ❋ = 2-week alpha date code |
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LP0801 -200mA O-236AB* LP0801K1 OT-23: OT-23. -50mA | |
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Contextual Info: STL30P3LLH6 P-channel 30 V, 0.024 Ω typ., 9 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet − preliminary data Features Order code VDS RDS on max ID PTOT STL30P3LLH6 30 V 0.03 Ω 9A 4.8 W • RDS(on) * Qg industry benchmark |
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STL30P3LLH6 DocID023669 | |
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Contextual Info: STL6P3LLH6 P-channel 30 V, 0.024 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet − preliminary data Features Order code VDS RDS on max ID PTOT STL6P3LLH6 30 V 0.03 Ω 6A 2W • RDS(on) * Qg industry benchmark |
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DocID023668 | |
powerflat 5x6Contextual Info: STL42P6LLF6 P-channel 60 V, 0.02 Ω typ., 9 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - target specification Features • Order code VDSS RDS on max. ID STL42P6LLF6 60 V 0.028 Ω @ 10 V 9A RDS(on)* Qg industry benchmark |
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STL42P6LLF6 DocID025457 powerflat 5x6 | |
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Contextual Info: STL30P3LLH6 P-channel 30 V, 0.024 Ω typ., 30 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet − preliminary data Features Order code VDS RDS on max ID PTOT STL30P3LLH6 30 V 0.03 Ω 30 A 4W • RDS(on) * Qg industry benchmark |
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STL30P3LLH6 DocID023669 | |
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Contextual Info: STL6P2UH7 P-channel 20 V, 0.023 Ω typ., 6 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 2x2 package Datasheet − target specification Features 1 2 Order code VDS RDS on max ID STL6P2UH7 20 V 0.029 Ω @ 4.5 V 6A 3 • Extremely low on-resistance RDS(on) |
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AM11269v1 DocID024979 | |
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Contextual Info: STS6P3LLH6 P-channel 30 V, 0.024 Ω typ., 6 A, STripFET VI DeepGATE™ Power MOSFET in a SO-8 package Datasheet - preliminary data Features Order code VDS RDS on max ID STS6P3LLH6 30 V 0.03 Ω 6A • RDS(on)* Qg industry benchmark • Extremely low on-resistance RDS(on) |
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DocID024219 | |
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Contextual Info: STS6P3LLH6 P-channel 30 V, 0.024 Ω typ., 6 A, STripFET VI DeepGATE™ Power MOSFET in a SO-8 package Datasheet — preliminary data Features Order code VDS RDS on max ID STS6P3LLH6 30 V 0.036 Ω 6A • RDS(on)* Qg industry benchmark ■ Extremely low on-resistance RDS(on) |
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Si2309DS
Abstract: Si2309DS-T1 7083
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Si2309DS O-236 OT-23) Si2309DS-T1 Si2309DS-T1-E3 08-Apr-05 7083 | |
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Contextual Info: STL9P2UH7 P-channel 20 V, 0.0195 Ω typ., 9 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3x3.3 package Datasheet - production data Features 1 • 2 3 Order code VDS RDS on max ID STL9P2UH7 20 V 0.0225 Ω @ 4.5 V 9A Extremely low on-resistance RDS(on) |
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DocID025141 | |
SI5435BDC
Abstract: Si5435BDC-T1
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Si5435BDC Si5435BDC-T1--E3 18-Jul-08 Si5435BDC-T1 | |
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Contextual Info: STT6P2UH7 P-channel 20 V, 0.023 Ω typ., 6 A STripFET VII DeepGATE™ Power MOSFET in a SOT23-6L package Datasheet − target specification Features Order code VDS RDS on max ID STT6P2UH7 20 V 0.029 Ω @ 4.5 V 6A • Ultra logic level • Extremely low on-resistance RDS(on) |
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OT23-6L OT23-6L SC14195p DocID024980 | |