P-CHANNEL MOSFET CODE 1A Search Results

H9435S

Contextual Info: HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9435S • P-Channel Enhancement-Mode MOSFET -30V, -5.3A 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features

Si1303DL

Abstract: S-63639
Contextual Info: Si1303DL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code

Si1305DL

Abstract: Tr431
Contextual Info: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code

Si1305DL

Abstract: ams330
Contextual Info: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code

P-Channel 1.8-V (G-S) MOSFET sot-323

Abstract: Si1307EDL Si1307DL
Contextual Info: Si1307EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.290 @ VGS = –4.5 V "0.91 0.435 @ VGS = –2.5 V "0.74 0.580 @ VGS = –1.8 V "0.64 SOT-323 SC-70 (3-LEADS) G 1 3 LF D XX YY Marking Code

P channel MOSFET 10A

Abstract: STM5853QF8RG 77m-ohm
Contextual Info: STM5853 P Channel Mode MOSFET with Schottky -3.6A DESCRIPTION STM5853 is the P-Channel logic enhancement mode power field effect transistors with Schottky Diode. The MOSFET is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state

N P CHANNEL dual POWER MOSFET

Abstract: marking code dual gate mos MOSFET dual SOP-8 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR P channel MOSFET 50A STC4516 SOP8 mos n STC5416 Dual Enhancement Mode MOSFET complementary mosfet
Contextual Info: STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially

12V 30A 3 pin mosfet

Abstract: MARKING TR SOT23-3 P MOSFET st2301A MOSFET P-channel SOT-23 MOSFET P channel SOT-23 marking 415 sot23 MOSFET P SOT-23 MARKING CODE 16 transistor sot23 P channel MOSFET 1A mosfet 20v 30A
Contextual Info: ST2301A P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for

mosfet vgs 5v

Abstract: ST341
Contextual Info: ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited

p channel mosfet 10a 20v

Contextual Info: ST2341 P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

STP3401

Abstract: ST3401 A1YA marking 04 sot-23-3L
Contextual Info: ST3401 P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

ST3401

Abstract: TRANSISTOR mosfet 30V 40A sot-23 P-Channel MOSFET P-Channel MOSFET 12V SOT 23 P channel MOSFET 40A a1ya MOSFET P channel SOT-23 MOSFET P-channel SOT-23 TRANSISTOR mosfet 40A p channel power trench mosfet
Contextual Info: P Channel Enhancement Mode MOSFET ST3401 -4.0A DESCRIPTION The ST3401 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.

st9401

Abstract: MARKING TR SOT23-3 P MOSFET MOSFET P-Channel sot-23 MOSFET P channel SOT-23 marking 415* sot23 P-Channel SOT-23 Power MOSFET MARKING CODE 16 transistor sot23 V1 SOT23-3 12V 30A 3 pin mosfet *S01Y
Contextual Info: ST9401 P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST9401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for

ST2341M

Contextual Info: M ST2341 ST2341M P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2341M is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

AME5251

Abstract: GTSD32
Contextual Info: AME Dual 1A, 1.5MHz Synchronous Step-Down Converter AME5251 n General Description n Features The AME5251 is a high efficiency monolithic synchronous dual buck regulator using a constant frequency, current mode architecture. Capable of delivering 1A output

P channel MOSFET 1A

Abstract: MOSFET NOTEBOOK sot-23 P-Channel MOSFET ST3413 marking 34A
Contextual Info: P Channel Enhancement Mode MOSFET ST3413 -3.4A DESCRIPTION The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

SOD-353

Abstract: mosfet sot353 ST1413AC 130m-ohm P channel MOSFET 1A
Contextual Info: P Channel Enhancement Mode MOSFET ST1413AC -3.4A DESCRIPTION The ST1413AC is the P-Channel logic enhancement mode power field effect transistors. It is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

MOSFET 50V 100A

Abstract: 4403 4403 transistor P channel MOSFET 10A SOP8 Package DIODE 76A 2535m STP4403
Contextual Info: 4403 STP STP4403 P Channel Enhancement Mode MOSFET - 10.0A DESCRIPTION STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

9434

Abstract: STP9434 SOP8 Package 5262m
Contextual Info: 9434 STP STP9434 P Channel Enhancement Mode MOSFET - 7.2A DESCRIPTION STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

Stanson Technology

Abstract: TH 9437 P channel MOSFET 1A MOSFET 30v sop-8
Contextual Info: P943 7 ST STP 9437 P Channel Enhancement Mode MOSFET - 5.7A DESCRIPTION STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

STP2341

Abstract: sot-23 P-Channel MOSFET mosfet vgs 5v P-Channel 1.8V MOSFET P-Channel MOSFET code AS SOP-23
Contextual Info: P Channel Enchancement Mode MOSFET STP2341 -3.3A DESCRIPTION The STP2341 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.

Contextual Info: 19-4752; Rev2; 11/96 > k i y i x i > k i D ual-Channel CardBus and PCM CIA VCC/VPP Pow er-Sw itching N etw orks escrip tio n F ea tu res ♦ Supports Two PC Card/CardBus Sockets ♦ 1A, 0.08ft Max 3.3V VCC Switch MAX1600 only 1A, 0.140 Max 5V VCC Switch

Contextual Info: STP9547 P Channel Enhancement Mode MOSFET - 6.8A DESCRIPTION The STP9547 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

EL7531

Abstract: EL7531IY EL7531IY-T13 EL7531IY-T7 EL7531IYZ EL7531IYZ-T13 EL7531IYZ-T7 MSOP10
Contextual Info: EL7531 Data Sheet July 13, 2006 Monolithic 1A Step-Down Regulator with Low Quiescent Current The EL7531 is a synchronous, integrated FET 1A step-down regulator with internal compensation. It operates with an input voltage range from 2.5V to 5.5V, which accommodates