P-CHANNEL MOSFET CODE 1A Search Results
P-CHANNEL MOSFET CODE 1A Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P | |||
TK5R1A08QM |
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MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS | Datasheet | ||
TK155E65Z |
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N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ | Datasheet | ||
TK090U65Z |
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MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL | Datasheet | ||
TK5R3E08QM |
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MOSFET, N-ch, 80 V, 120 A, 0.0053 Ohm@10V, TO-220AB | Datasheet |
P-CHANNEL MOSFET CODE 1A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: HI-SINCERITY Spec. No. : MOS200836 Issued Date : 2008.03.06 Revised Date : 2008.03.06 Page No. : 1/6 MICROELECTRONICS CORP. H2301N H2301N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -2.2A 3 1 3-Lead Plastic SOT-23 Package Code: P Pin 1: Gate 2: Source 3: Drain |
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MOS200836 H2301N H2301N OT-23 183oC 217oC 260oC 10sec | |
H9435S
Abstract: diode marking 91a marking CODE 91A h4435 91A MARKING
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MOS200101) H4435S H4435S 183oC 217oC 260oC 245oC H9435S diode marking 91a marking CODE 91A h4435 91A MARKING | |
H9435S
Abstract: SO-8 V 052
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MOS200509( H9435S/H9435DS H9435S H9435DS 217oC 260oC 245oC H9435S H9435DS SO-8 V 052 | |
H9435SContextual Info: HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9435S • P-Channel Enhancement-Mode MOSFET -30V, -5.3A 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features |
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MOS200509 H9435S H9435S Un150oC 200oC 183oC 217oC 260oC 245oC | |
H9435SContextual Info: HI-SINCERITY Spec. No. : MOS200509 # Issued Date : 2005.10.01 Revised Date : 2008.12.04 Page No. : 1/4 MICROELECTRONICS CORP. H9435S/H9435DS • P-Channel Enhancement-Mode MOSFET (-30V, -5.3A) 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment |
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MOS200509( H9435S/H9435DS H9435S H9435DS 183oC 217oC 260oC 245oC H9435S H9435DS | |
H2301N
Abstract: ultra low idss code 619 sot-23
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MOS200612 H2301N H2301N OT-23 183oC 217oC 260oC 10sec ultra low idss code 619 sot-23 | |
H2305
Abstract: MOSFET 20V 45A mark tp sot23
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MOS200807 H2305N H2305N OT-23 OT-23 183oC 217oC 260oC 10sec H2305 MOSFET 20V 45A mark tp sot23 | |
Contextual Info: HI-SINCERITY Spec. No. : MOS200807 Issued Date : 2008.11.12 Revised Date : Page No. : 1/5 MICROELECTRONICS CORP. H2305N H2305N Pin Assignment & Symbol P-Channel Enhancement-Mode MOSFET -20V, -4.5A 3 1 2 3-Lead Plastic SOT-23 Package Code: N Pin 1: Gate 2: Source 3: Drain |
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MOS200807 H2305N H2305N OT-23 OT-23 183oC 217oC 260oC 10sec | |
si2301
Abstract: Si2301ADS SI2301ADS SI2301DS SI2301DS 71-835 1a marking
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Si2301ADS O-236 OT-23) Si2301DS 18-Jul-08 si2301 SI2301ADS SI2301DS 71-835 1a marking | |
SI2301ADS SI2301DS
Abstract: 71-835 SI2301DS Si2301ADS tjm sot23 1A marking 1A MARKING CODE
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Si2301ADS O-236 OT-23) Si2301DS S-20617--Rev. 29-Apr-02 SI2301ADS SI2301DS 71-835 tjm sot23 1A marking 1A MARKING CODE | |
si2301adsContextual Info: Si2301ADS New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.130 @ VGS = –4.5 V –2.0 0.190 @ VGS = –2.5 V –1.6 VDS (V) –20 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (1A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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Si2301ADS O-236 OT-23) Si2301DS 08-Apr-05 | |
Si1303DL
Abstract: Si1303EDL
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Si1303EDL OT-323 SC-70 18-Jul-08 Si1303DL | |
MARKING CODE LB
Abstract: SI1305DL
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Si1305DL OT-323 SC-70 S-63638--Rev. 01-Nov-99 MARKING CODE LB | |
S-63639
Abstract: S-63639-Rev SI1303DL
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Si1303DL OT-323 SC-70 S-63639--Rev. 08-Nov-99 S-63639 S-63639-Rev | |
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Si1307EDL
Abstract: Si1307DL
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Si1307EDL OT-323 SC-70 18-Jul-08 Si1307DL | |
Si1303DL
Abstract: S-63639
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Si1303DL OT-323 SC-70 S-63639--Rev. 08-Nov-99 S-63639 | |
Si1305DL
Abstract: Tr431
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Si1305EDL OT-323 SC-70 08-Apr-05 Si1305DL Tr431 | |
Si1303DL
Abstract: Si1303EDL
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Si1303EDL OT-323 SC-70 09-Nov-99 Si1303DL | |
Si1305DLContextual Info: Si1305DL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 S D LB XX YY Marking Code |
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Si1305DL OT-323 SC-70 S-63638--Rev. 01-Nov-99 | |
Si1303DL
Abstract: Si1303EDL
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Si1303EDL OT-323 SC-70 08-Apr-05 Si1303DL | |
Si1305DL
Abstract: ams330
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Si1305EDL OT-323 SC-70 18-Jul-08 Si1305DL ams330 | |
P-Channel 1.8-V (G-S) MOSFET sot-323
Abstract: Si1307EDL Si1307DL
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Si1307EDL OT-323 SC-70 08-Apr-05 P-Channel 1.8-V (G-S) MOSFET sot-323 Si1307DL | |
SI1307EDLContextual Info: Si1307EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.290 @ VGS = –4.5 V "0.91 0.435 @ VGS = –2.5 V "0.74 0.580 @ VGS = –1.8 V "0.64 SOT-323 SC-70 (3-LEADS) G 1 3 LF D XX YY Marking Code |
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Si1307EDL OT-323 SC-70 10-Nov-99 | |
Contextual Info: TS2026 1A Dual Channel USB High-Side Power Switch SOP-8 Pin Definition: 1. CTLA 8. OUTA 2. FLGA 7. IN 3. FLGB 6. GND 4. CTLB 5. OUTB General Description The TS2026 is integrated 90mΩ high-side power switch for self-powered and bus-powered Universal Serial Bus |
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TS2026 TS2026 |