P-CHANNEL MOSFET CODE 1A Search Results

H9435S

Contextual Info: HI-SINCERITY Spec. No. : MOS200509 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 MICROELECTRONICS CORP. H9435S • P-Channel Enhancement-Mode MOSFET -30V, -5.3A 8-Lead Plastic SO-8 Package Code: S H9435S Symbol & Pin Assignment Features

Si1303DL

Abstract: S-63639
Contextual Info: Si1303DL New Product Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.430 @ VGS = –4.5 V "0.72 0.480 @ VGS = –3.6 V "0.68 0.700 @ VGS = –2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code

Si1305DL

Abstract: Tr431
Contextual Info: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code

Si1305DL

Abstract: ams330
Contextual Info: Si1305EDL New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.280 @ VGS = –4.5 V "0.92 0.380 @ VGS = –2.5 V "0.79 0.530 @ VGS = –1.8 V "0.67 SOT-323 SC-70 (3-LEADS) G 1 3 LE D XX YY Marking Code

P channel MOSFET 10A

Abstract: STM5853QF8RG 77m-ohm
Contextual Info: STM5853 P Channel Mode MOSFET with Schottky -3.6A DESCRIPTION STM5853 is the P-Channel logic enhancement mode power field effect transistors with Schottky Diode. The MOSFET is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state

N P CHANNEL dual POWER MOSFET

Abstract: marking code dual gate mos MOSFET dual SOP-8 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR P channel MOSFET 50A STC4516 SOP8 mos n STC5416 Dual Enhancement Mode MOSFET complementary mosfet
Contextual Info: STC4516 Complementary Dual Enhancement Mode MOSFET 8.5A for N Channel / -7.2A for P Channl DESCRIPTION STC4516 is the complementary enhancement mode power field effect transistor using high cell density, DMOS trench technology. This high density process is especially

12V 30A 3 pin mosfet

Abstract: MARKING TR SOT23-3 P MOSFET st2301A MOSFET P-channel SOT-23 MOSFET P channel SOT-23 marking 415 sot23 MOSFET P SOT-23 MARKING CODE 16 transistor sot23 P channel MOSFET 1A mosfet 20v 30A
Contextual Info: ST2301A P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for

mosfet vgs 5v

Abstract: ST341
Contextual Info: ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited

p channel mosfet 10a 20v

Contextual Info: ST2341 P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2341 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

STP3401

Abstract: ST3401 A1YA marking 04 sot-23-3L
Contextual Info: ST3401 P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

st9401

Abstract: MARKING TR SOT23-3 P MOSFET MOSFET P-Channel sot-23 MOSFET P channel SOT-23 marking 415* sot23 P-Channel SOT-23 Power MOSFET MARKING CODE 16 transistor sot23 V1 SOT23-3 12V 30A 3 pin mosfet *S01Y
Contextual Info: ST9401 P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST9401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for

ST2341M

Contextual Info: M ST2341 ST2341M P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2341M is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

MOSFET P channel SOT-23

Abstract: A1YA MOSFET P-channel SOT-23 32A marking sot-23 MARKING TR SOT23-3 P MOSFET STP3401SRG MOSFET P SOT-23 ST3401SRG mosfet 40a 12v STP340
Contextual Info: ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

P channel MOSFET 1A

Abstract: MOSFET NOTEBOOK sot-23 P-Channel MOSFET ST3413 marking 34A
Contextual Info: P Channel Enhancement Mode MOSFET ST3413 -3.4A DESCRIPTION The ST3413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

MOSFET 50V 100A

Abstract: 4403 4403 transistor P channel MOSFET 10A SOP8 Package DIODE 76A 2535m STP4403
Contextual Info: 4403 STP STP4403 P Channel Enhancement Mode MOSFET - 10.0A DESCRIPTION STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

9434

Abstract: STP9434 SOP8 Package 5262m
Contextual Info: 9434 STP STP9434 P Channel Enhancement Mode MOSFET - 7.2A DESCRIPTION STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly

Stanson Technology

Abstract: TH 9437 P channel MOSFET 1A MOSFET 30v sop-8
Contextual Info: P943 7 ST STP 9437 P Channel Enhancement Mode MOSFET - 5.7A DESCRIPTION STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Contextual Info: 19-4752; Rev2; 11/96 > k i y i x i > k i D ual-Channel CardBus and PCM CIA VCC/VPP Pow er-Sw itching N etw orks escrip tio n F ea tu res ♦ Supports Two PC Card/CardBus Sockets ♦ 1A, 0.08ft Max 3.3V VCC Switch MAX1600 only 1A, 0.140 Max 5V VCC Switch

Contextual Info: STP9547 P Channel Enhancement Mode MOSFET - 6.8A DESCRIPTION The STP9547 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

4935p

Contextual Info: AF4935P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Dual P MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and

BFAAA

Contextual Info: EL7536 Data Sheet July 5, 2006 FN7396.7 Monolithic 1A Step-Down Regulator Features The EL7536 is a synchronous, integrated FET 1A step-down regulator with internal compensation. It operates with an input voltage range from 2.5V to 5.5V, which accommodates

4953p

Abstract: max5390 mosfet 4953
Contextual Info: AF4953P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Fast Switching The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

Contextual Info: ISL6559 Data Sheet May 2002 FN9084 Multi-Phase PWM Controller Features The ISL6559 provides core-voltage regulation by driving 2 to 4 interleaved synchronous-rectified buck-converter channels in parallel. Interleaving the channel timing results in increased ripple frequency which reduces input and output

HIP6601B

Abstract: ISL6569 ISL6569CB ISL6569CB-T ISL6569CR ISL6569CR-T MO-220 DAC ic 0808 pin diagram
Contextual Info: ISL6569 Data Sheet August 2002 FN9085.3 Multi-Phase PWM Controller Features The ISL6569 provides core-voltage regulation by driving two interleaved synchronous-rectified buck-converter channels in parallel. Interleaving the channel timing results in increased ripple frequency which reduces input and output