P-CHANNEL MOSFET 100V, 10 AMPS Search Results

OM6038SM

Abstract: OM6039SM OM6040SM OM6041SM OM6041
Contextual Info: OM6Û38SM OM6040SM OM6039SM OM6041SM POWER MOSFET IN HERMETIC ISOLATED SURFACE MOUNT PACKAGE 100V Thru 500V, Up To 10 Amp, N-Channel Power MOSFETs In A Hermetic Surface Mount Package FEATURES • • • Isolated H erm etic M etal P a c k a g e F ast Sw itching, Low D rive C urrent

220V ac to 12V dc 8 amps power supply circuit

Abstract: ndr 420
Contextual Info: HV732 High Speed ±100V 2A Integrated Ultrasound Pulser Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex HV732 is a single, complete, high-voltage, high-speed, ultrasound transmitter pulser. It is designed for medical ultrasound imaging applications.

ndr 420

Contextual Info: HV732 High Speed ±100V 2A Integrated Ultrasound Pulser Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex HV732 is a single, complete, high-voltage, high-speed, ultrasound transmitter pulser. It is designed for medical ultrasound imaging applications.

220V ac to 12V dc 8 amps power supply circuit

Abstract: pin diagram of MOSFET
Contextual Info: Supertex inc. HV732 Initial Release High Speed ±100V 2A Integrated Ultrasound Pulser Features ► ► ► ► ► ► ► ► ► ► General Description HVCMOS technology for high performance 0 to ±100V output voltage ±2A source and sink current Built-in damping for RTZ waveform capability

ndr 550

Abstract: 220V ac to 12V dc 8 amps power supply circuit 100V 100A Mosfet DC 5V to DC 100V CIRCUIT DIAGRAM 44-lead qfn supertex package outline HV732 POWER SUPPLY 220V AC TO 12v P-channel MOSFET 100V, 20 Amps PAD3
Contextual Info: Supertex inc. HV732 Initial Release High Speed ±100V 2A Integrated Ultrasound Pulser Features ► ► ► ► ► ► ► ► ► ► General Description HVCMOS technology for high performance 0 to ±100V output voltage ±2A source and sink current Built-in damping for RTZ waveform capability

10nF cap

Contextual Info: HV732 High Speed ±100V 2A Integrated Ultrasound Pulser Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex HV732 is a single, complete, high-voltage, high-speed, ultrasound transmitter pulser. It is designed for medical ultrasound imaging applications.

ndr 550

Abstract: ndr 420 P-channel MOSFET 100V, 10 Amps DC 5V to DC 100V CIRCUIT DIAGRAM logic pulser logic pulser characteristics 44-lead qfn supertex package outline HV732 10MHz ultrasound pulser mosfet buffers output current 100mA
Contextual Info: HV732 High Speed ±100V 2A Integrated Ultrasound Pulser Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex HV732 is a single, complete, high-voltage, high-speed, ultrasound transmitter pulser. It is designed for medical ultrasound imaging applications.

Contextual Info: HV732 High Speed ±100V 2A Integrated Ultrasound Pulser Features General Description ► ► ► ► ► ► ► ► ► ► The Supertex HV732 is a single, complete, high-voltage, high-speed, ultrasound transmitter pulser. It is designed for medical ultrasound imaging applications.

power BJT 1000 volt vce

Abstract: Catalog Bipolar Transistor bjt 500v transistor BJT BJT IC Vce 1.2 Volt led boost driver power bjt transistor 600v 7336 BJT IC Vce 5v transistor catalog 300 WATT
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

ndr 420

Abstract: ndr 550 DC 5V to DC 100V CIRCUIT DIAGRAM 44-lead qfn supertex package outline HV732 drive control damp P-channel MOSFET 100V, 20 Amps power supply 220v- 12v circuit diagram
Contextual Info: Supertex inc. HV732 High Speed ±100V 2A Integrated Ultrasound Pulser Features HVCMOS technology for high performance 0 to ±100V output voltage ±2.0A source and sink current Built-in damping for RTZ waveform capability Gate-clamp for quick output amplitude ramping

ndr 420

Abstract: ndr 550
Contextual Info: HV732 High Speed ±100V 2A Integrated Ultrasound Pulser Features General Description Application The HV732 consists of a control logic circuit, level translators, MOSFET gate drive buffers, clamp circuits, and high current, high voltage MOSFETs as the ultrasound transmitter pulser

ir 4427 cross reference

Abstract: DDFA free of IR sensors free download datasheet of IR sensors 6A10 Diodes Inc avalanche transistors DIODES 6A10 equivalent 6A4 zener 6a1 6A4-T
Contextual Info: 6A05 - 6A10 6.0A SILICON RECTIFIER Features • • • High Surge Current Capability Low Leakage and Forward Voltage Drop Lead Free Finish, RoHS Compliant Note 1 Mechanical Data • • • • • • • Case: R-6 Case Material: Molded Plastic. UL Flammability

transistor C 4429 equivalent

Abstract: DIODES 6A10 6A10 Diodes Inc inverter driver bjt half bridge equivalent 6A4 free download datasheet of IR sensors
Contextual Info: 6A05 - 6A10 6.0A SILICON RECTIFIER Features • • • High Surge Current Capability Low Leakage and Forward Voltage Drop Lead Free Finish, RoHS Compliant Note 1 Mechanical Data • • • • • • • Case: R-6 Case Material: Molded Plastic. UL Flammability

power BJT DARLINGTON PAIR NPN

Abstract: lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference
Contextual Info: BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1– SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0.15 0.3 0.45 0.6 Forward Voltage VF V

3020 transistor

Contextual Info: M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing

P-channel MOSFET 100V, 10 Amps

Abstract: 3020 transistor 4707 N Channel MOSFETs P-channel MOSFET 100V, 20 Amps 150 amp H-bridge Mosfet MPM3002 MPM3012 MSK3020 drive motor 10A with transistor P channel MOSFET 100V H-bridge Mosfet
Contextual Info: M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing

3020 transistor

Abstract: 4707 N Channel MOSFETs MPM3002 MPM3012 P channel MOSFET 10A schematic P-channel MOSFET 100V, 10 Amps p-channel power mosfet 14A S 170 MOSFET TRANSISTOR P-channel MOSFET 100V, 20 Amps
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing

3020 transistor

Abstract: P-channel MOSFET 100V, 10 Amps P-channel MOSFET 100V, 20 Amps
Contextual Info: ISO 9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3020 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: • • • • • • Pin Compatible with MPM3002 and MPM3012 P and N Channel MOSFETs for Ease of Drive N Channel Current Sensing MOSFET for Lossless Sensing

FMMT634TA

Abstract: FMMTA42QTA FZT689BTA GL-106 fzt1151 fmmt6517ta Dual PNP Transistor FMMT734TA FMMT723TA FR107-T-F
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

ultrasound transducer circuit driver

Abstract: PAY MARKING MOSFET MD1811 MD1811K6-G QFN-16 TC6320 ic driver mosfet 8 pin
Contextual Info: MD1811 Initial Release High Speed Quad MOSFET Driver General Description Features 6ns rise and fall time 2 A peak output source/sink current 1.2V to 5V input CMOS compatible 5V to 12V total supply voltage Smart Logic threshold Low jitter design Quad matched channels

ic driver mosfet 8 pin

Contextual Info: MD1811 Initial Release High Speed Quad MOSFET Driver General Description Features 6ns rise and fall time 2 A peak output source/sink current 1.2V to 5V input CMOS compatible 5V to 12V total supply voltage Smart Logic threshold Low jitter design Quad matched channels

Contextual Info: MD1811 High Speed Quad MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► ► The Supertex MD1811 is a high speed, quad MOSFET driver designed to drive high voltage P and N-channel MOSFETs for medical ultrasound applications and other applications requiring a

ultrasound transducer circuit driver

Abstract: md1812 Logic Level Gate Drive mosfet ultrasound transducer high power driver Piezoelectric ultrasound Transducer MD1812K6-G TC2320 TC6320 N P CHANNEL dual POWER MOSFET
Contextual Info: Product Summary Sheet MD1812 High Speed Quad MOSFET Driver +100V +10V +10V 1 F 0.22 F 0.47 F 11 14 15 INA 1 INB Applications: ► Medical Ultrasound Imaging ► Piezoelectric Transducer Drivers ► Non-Destructive Evaluation ► High Speed Level Translator

voltage level shifter 3.3V to 5V

Abstract: level shifter 5V to 3.3V
Contextual Info: MD1811 High Speed Quad MOSFET Driver Features General Description ► ► ► ► ► ► ► ► ► ► ► The Supertex MD1811 is a high speed, quad MOSFET driver designed to drive high voltage P and N-channel MOSFETs for medical ultrasound applications and other applications requiring a