P-CHANNEL 90A POWER MOSFET Search Results

IXTR120P20T

Contextual Info: Advance Technical Information IXTR120P20T TrenchPTM Power MOSFETs VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS

IXTR120P20T

Contextual Info: Preliminary Technical Information IXTR120P20T TrenchPTM Power MOSFET VDSS ID25 RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings

Contextual Info: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTR120P20T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 90A Ω 32mΩ 300ns ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS

ON 4998

Abstract: 4998 MOSFET 50 Amp 100 volt mosfet SBF50P10-023L
Contextual Info: SBF50P10-023L SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4998, REV. - RAD TOLERANT LOW RDS HERMETIC POWER MOSFET - P-CHANNEL FEATURES: • 100 Volt, 0.023 Ohm, 90A MOSFET current limited to 50A by package • Characterized for VGS of 4.5V for Logic Level Drive

Contextual Info: Analog Power AM90P06-06P P-Channel 60-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -60 PRODUCT SUMMARY rDS(on) (mΩ) 6.2 @ VGS = -10V 7.3 @ VGS = -4.5V ID (A) 90a Typical Applications:

Contextual Info: Analog Power AM90P06-20B P-Channel 60-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -60 PRODUCT SUMMARY rDS(on) (mΩ) 20 @ VGS = -10V 22 @ VGS = -4.5V ID (A) -90a Typical Applications:

DIODE 5035

Contextual Info: SHD219720 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5035, REV. - LOW RDS HERMETIC POWER MOSFET - P-CHANNEL FEATURES: • 60 Volt, 0.01 Ohm, 90A MOSFET • Isolated Hermetic Metal Package • Ultra Low RDS on MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25°C UNLESS OTHERWISE SPECIFIED.

Contextual Info: A dvanced P ow er T e c h n o lo g y 9 APT20M25JNR 200V 100A 0.025Í2 APT20M30JNR 200V 90A 0.030Í1 ISOTOP* 5 Û "UL Recognized" File No. E145592 S POWER MOS IV‘ AVALANCHE RATED ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS

Contextual Info: PolarPTM Power MOSFET IXTK90P20P IXTX90P20P VDSS ID25 = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated - 200V - 90A Ω 44mΩ TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

*9933b

Abstract: ixtk90p20p IXTX90P20P PLUS247 DS99933B
Contextual Info: I XTK90P20P PolarPTM Power MOSFET VDSS ID25 IXTX90P20P = = ≤ RDS on - 200V - 90A Ω 44mΩ P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: Preliminary Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTR140P10T RDS on = = ≤ -100V - 90A Ω 13mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

switching pushpull

Abstract: IXTN90P20P
Contextual Info: PolarPTM Power MOSFET IXTN90P20P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 200V - 90A Ω 44mΩ miniBLOC, SOT-227 (IXTN) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTH90P10P IXTT90P10P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated - 100V - 90A Ω 25mΩ TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

P-CHANNEL 45A TO-247 POWER MOSFET

Abstract: IXTH90P10P IXTT90P10P
Contextual Info: IXTH90P10P IXTT90P10P PolarPTM Power MOSFET VDSS ID25 = = ≤ RDS on - 100V - 90A Ω 25mΩ P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: PolarPTM Power MOSFET VDSS ID25 I XTK90P20P IXTX90P20P = = ≤ RDS on - 200V - 90A Ω 44mΩ P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

IXTN90P20P

Contextual Info: IXTN90P20P PolarPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 200V - 90A Ω 44mΩ P-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: PolarPTM Power MOSFET VDSS ID25 IXTH90P10P IXTT90P10P = = ≤ RDS on - 100V - 90A Ω 25mΩ P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: I XTK90P20P PolarPTM Power MOSFETs VDSS ID25 IXTX90P20P = = ≤ RDS on - 200V - 90A Ω 44mΩ P-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: IXTN90P20P PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = ≤ D RDS on S miniBLOC E153432 - 200V - 90A Ω 44mΩ G S S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: IXTT90P10P IXTH90P10P PolarPTM Power MOSFETs VDSS ID25 = = ≤ RDS on - 100V - 90A Ω 25mΩ D P-Channel Enhancement Mode Avalanche Rated G TO-268 (IXTT) S G S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

APT20M25JNR

Abstract: APT20M25 APT20M30JNR
Contextual Info: A dvanced P ow er Te c h n o l o g y ' APT20M25JNR 200V 100A 0.025Q APT20M30JNR 200V 90A 0.030Q ISOTOP* mMWJaîiMWBÉMâ % “UL Recognized" File No. E145592 S N-CHANNEL ENHANCEMENT MODE LOW VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.

P channel MOSFET 50A

Abstract: KRF7105
Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7105 Features Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Absolute Maximum Ratings Ta = 25 Parameter Symbol

1RF7105

Abstract: 1RF710 irf7105 mosfet MOSFET C65 irf7105 ior 050a
Contextual Info: PD - 9.1097B International IOR Rectifier IRF7105 HEXFET Power MOSFET • Advanced Process Technology • Ultra Low On-Resistance • Dual N and P Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching 'P-CHANNEL MOSFET !

irf 536

Abstract: IRF p 536 MOSFET transistor irf 649
Contextual Info: PD - 96102 IRF7105QPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free S1 N-CHANNEL MOSFET