P-CHANNEL 250V 16A POWER MOSFET Search Results

Contextual Info: BUZ907D BUZ908D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING

Contextual Info: BUZ902D BUZ903D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING

250v 16a 250w mosfet

Abstract: p-channel 250V 16A TO3 power mosfet 220v diodes BUZ908D 250v 16a 250w BUZ902D BUZ903D BUZ907D power mosfet audio 250V
Contextual Info: BUZ907D BUZ908D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 P–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING

250v 16a 250w mosfet

Abstract: 250v 16a 250w n-channel 250w power mosfet p-channel 250V 16A power mosfet BUZ902D BUZ903D BUZ907D BUZ908D
Contextual Info: BUZ902D BUZ903D MAGNA TEC MECHANICAL DATA Dimensions in mm +0.1 -0.15 8.7 Max. 1 1.50 Typ. Ø 20 M ax. 16.9 ± 0.15 39.0 ± 1.1 30.2 ± 0.15 10.90 ± 0.1 2 11.60 ± 0.3 Ø 1.0 25.0 N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING

BUZ907DP

Abstract: BUZ902DP 250v 16a 250w mosfet BUZ903DP BUZ908DP Magnatec p-channel 250V 16A power mosfet p-channel 250V power mosfet
Contextual Info: BUZ907DP BUZ908DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS 1 2 FEATURES 3 • HIGH SPEED SWITCHING 2.0 2.0 1.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE 220V & 250V

Contextual Info: BUZ902DP BUZ903DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 N–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS 1 2 FEATURES 3 • HIGH SPEED SWITCHING 2.0 2.0 1.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE 220V & 250V

BUZ902DP

Abstract: 250v 16a 250w mosfet BUZ903DP BUZ907DP BUZ908DP 3pbl
Contextual Info: BUZ902DP BUZ903DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 N–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS 1 2 FEATURES 3 • HIGH SPEED SWITCHING 2.0 2.0 1.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE 220V & 250V

Contextual Info: BUZ907DP BUZ908DP MAGNA TEC MECHANICAL DATA Dimensions in mm 20.0 P–CHANNEL POWER MOSFET 5.0 3.3 Dia. POWER MOSFETS FOR AUDIO APPLICATIONS 1 2 FEATURES 3 • HIGH SPEED SWITCHING 2.0 2.0 1.0 • SEMEFAB DESIGNED AND DIFFUSED 3.4 • HIGH VOLTAGE 220V & 250V

Contextual Info: MITSUBISHI Neh POWER MOSFET FK16VS-5 HIGH-SPEED SWITCHING USE FK16VS-5 OUTLINE DRAWING ^ \ \ Dimensions in mm 10.5MAX. ,4 .5 . 1.3 ' ; x i2 s i.ï 0.5 • VDSS . 250V • TDS ON (MAX)

Contextual Info: MITSUBISHI Neh POWER MOSFET FK16KM-5 HIGH-SPEED SWITCHING USE FK16KM-5 OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 V d s s . 250V rDS ON (MAX) .0.31 Í2

FK16SM-5

Contextual Info: MITSUBISHI Neh POWER MOSFET FK16SM-5 HIGH-SPEED SWITCHING USE FK16SM-5 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 w v 5.45 0.6 If Q w r V d s s . 250V rDS ON (MAX) Id . 0.31 Í1

1H23

Contextual Info: MITSUBISHI Neh POWER MOSFET FK16UM-5 HIGH-SPEED SWITCHING USE FK16UM-5 OUTLINE DRAWING Dimensions in mm LU U q w Q w r V d s s . 250V rDS ON (MAX) . 0.31 Í1

Contextual Info: MITSUBISHI Neh POWER MOSFET FS16SM-5 HIGH-SPEED SWITCHING USE FS16SM-5 OUTLINE DRAWING Dimensions in mm 4.5 . 15.9MAX. 1.5 TI 5.45 0.6 GATE DRAIN SOURCE DRAIN • V d s s . 250V • rDS ON (MAX) .0 .2 5 Q

VDS104

Contextual Info: SEMICONDUCTOR KF16N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF16N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor

Contextual Info: MITSUBISHI Neh POWER MOSFET FK16UM-5 HIGH-SPEED SWITCHING USE FK16UM-5 OUTLINE DRAWING Dimensions in mm • VDSS .250V .0.31 n • Id . 16A

fs16um-5

Abstract: FS16UM5
Contextual Info: MITSUBISHI Neh POWER MOSFET FS16UM-5 HIGH-SPEED SWITCHING USE j FS16UM-5 • Voss . •250V 0.25Q 16A • TDS ON (MAX) • I d . APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­

fs16

Abstract: FS16UMA-5A
Contextual Info: MITSUBISHI Nch POWER MOSFET ARY FS16UMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS16UMA-5A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0

Contextual Info: MITSUBISHI Neh POWER MOSFET FS16KMA-5A HIGH-SPEED SWITCHING USE FS16KMA-5A OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 10V DRIVE . 250V • V • rDS ON (M A X ) .0.25Í2

Contextual Info: MITSUBISHI Nch POWER MOSFET •§;> >>•+. ^ „.»s*- FS16KMA-5A fin*' slljü\ecl 1 *p- "TVi'S 's JJÎ, \\ttVrts &T s°^ HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 10 ± 0 .3 2.8 ± 0 .2 • 10V DRIVE • V d s s . 250V

FS16KMA-5A

Contextual Info: MITSUBISHI Nch POWER MOSFET ARY FS16KMA-5A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS16KMA-5A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2

Contextual Info: MITSUBISHI Neh POWER MOSFET FK16SM-5 HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 i-ä-i GATE DRAIN SOURCE DRAIN »VDSS . 250V >r o s ON (MAX) . 0.31 Í2

fs16km-5

Abstract: CF102
Contextual Info: MITSUBISHI Neh POWER MOSFET FS16KM-5 HIGH-SPEED SWITCHING USE FS16KM-5 OUTLINE DRAWING D im en sio n s in mm 10 ± 0 .3 2.8 ± 0.2 f- ip n^i-upA-—, I :j: '.2;U.'l 1 1 o•H 03 to T ^ • V d s s . 250V

gs 7103

Contextual Info: MITSUBISHI Neh POWER MOSFET FS16VS-5 HIGH-SPEED SWITCHING USE FS16VS-5 OUTLINE DRAWING Dimensions in mm T a y: % 3/ Q2y ö ÍQ oi A2 £ X GATE DRAfN SOURCE DRAIN • V dss . 250V • rDS ON) (MAX)

SFS9614

Abstract: T0-220F P CHANNEL POWER MOSFET
Contextual Info: SFS9614 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = -250 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA Max. @ VDS = -250V