P-CHANNEL 200V 30A MOSFET Search Results

Contextual Info: PD-94605B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHMS597260 100K Rads (Si) IRHMS593260 300K Rads (Si) RDS(on) 0.103Ω 0.103Ω ID -30A -30A Low-Ohmic

12v 30A regulator

Abstract: P-channel 200V 30A mosfet IRHMS593260 IRHMS597260 L-073 PD946
Contextual Info: PD-94605E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHMS597260 100K Rads (Si) 0.103Ω -30A IRHMS593260 300K Rads (Si) 0.103Ω -30A

Contextual Info: PD-94605D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHMS597260 100K Rads (Si) 0.103Ω -30A IRHMS593260 300K Rads (Si) 0.103Ω -30A

Contextual Info: PD-94605E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 ™ TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) I D IRHMS597260 100K Rads (Si) 0.103Ω -30A IRHMS593260 300K Rads (Si) 0.103Ω -30A

12V 30A diode

Abstract: AS025
Contextual Info: PD-94605C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597260 200V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHMS597260 100K Rads (Si) 0.103Ω IRHMS593260 300K Rads (Si) 0.103Ω ID -30A -30A International Rectifier’s R5TM technology provides

ISOPLUS247

Abstract: IXTR48P20P 48P20P
Contextual Info: Preliminary Technical Information PolarPTM Power MOSFET IXTR48P20P VDSS ID25 RDS on = = ≤ - 200V - 30A Ω 93mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 (IXTR) E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V

Contextual Info: PolarPTM Power MOSFET VDSS ID25 IXTR48P20P RDS on = = ≤ - 200V - 30A Ω 93mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200

IXTR48P20P

Abstract: 48P20P ISOPLUS247
Contextual Info: IXTR48P20P PolarPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 200V - 30A Ω 93mΩ P-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 200

2N6765

Abstract: 2n6766
Contextual Info: 23 H a r r is 2N 6 765 2N 6 766 N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u st 1991 Package Features T 0 -2 0 4 A E BOTTOM VIEW • 25A and 30A , 1 50V - 200V • rD S on = 0 .0 8 5 0 and 0 .1 2 0 DRAIN ^ (FLANGE) SOURCE • S O A is P o w er-D issip a tio n Lim ited

IRF P CHANNEL MOSFET 200V 20A

Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Contextual Info: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω

2SK1812

Abstract: F30W30
Contextual Info: L V X v 'J -X /^ -M O S F E T LVX SERIES POWER MOSFET O U T L I N E D IM E N S IO N S 2SK1812 F30W30 300v 30a • Æ fê ïl R A T IN G S A bsolute M a x im u m R atings m Item g -» IB 9k Symbol Storage Temperature ■f-^^>U§Lfg_ Channel Temperature Y v -4 > ■ V — x B i

Contextual Info: MITSUBISHI Neh POWER MOSFET FS14SM-16A HIGH-SPEED SWITCHING USE FS14SM-16A •800V : »VDSS . • ro s ON (MAX) ■0.70Q • I d . . 1 4 A APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per­

FS20KMA-4A

Abstract: fs20kma
Contextual Info: MITSUBISHI Nch POWER MOSFET ARY FS20KMA-4A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS20KMA-4A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2

FS20UMA-4A

Contextual Info: MITSUBISHI Nch POWER MOSFET ARY FS20UMA-4A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FS20UMA-4A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 ➃ 1.0

IRF250R

Abstract: free IR circuit diagram
Contextual Info: [ 2 H A R R I S IR F 2 5 0 /2 5 1 /2 5 2 /2 5 3 IR F 2 5 0 R /2 5 1 R /2 5 2 R /2 5 3 R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -2 0 4 A E BOTTOM VIEW • 25A and 30A, 150V - 200V • ros on = 0 .0 8 5 fl and 0 .1 2 0 fi

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

ilpi 215

Abstract: C1 1OOUF ilc 150 eth transistor k41 brush dc motor control 200v 20a h-bridge igbt pwm k3900 82340 ilpi -115 transistor k42
Contextual Info: □OB' PWR-82340 and PWR-82342 ILC DATA DEVICE CORPORATION _ SMART POWER H-BRIDGE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82340 and PWR-82342 are 30A H-bridge motor drive hybrids. The PWR-82340 has a 200V rating and uses MOSFETs in the output stage while the

FL16KM-6A

Contextual Info: MITSUBISHI Nch POWER MOSFET ARY FL16KM-6A MIN RELI . ation change. ecific nal sp subject to fi a t o re is is nic limits a e: Th tr Notice parame Som P HIGH-SPEED SWITCHING USE FL16KM-6A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2

complementary MOSFET 2sk

Abstract: transistor+2sk 2SK series 2SK 20a 600v 2sk 1181 2SK 150A 2SK+series
Contextual Info: SHINDENGEN Power MOSFET HVX-2 series Shindengen Electric Mfg.Co.,Ltd. Tokyo, Japan. 021^307 □□□2330 Tflû SHINDENGEN Power MOSFET Products and Their Applications s. VDSS V Input 60 150 DC12V DC24V 180 200 230 250 350 300 500 600 700 900 DC48V to 72V

12 volt 200 Amp PWM

Abstract: 20a step motor MSK4322
Contextual Info: ISO-9001 CERTIFIED BY DSCC M.S. KENNEDY CORP. 8170 Thompson Road FEATURES: 20 AMP, 200 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID Cicero, N.Y. 13039 200V, 20 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 1.0°C/W Each MOSFET

MSK4322

Abstract: 12 volt 200 Amp PWM 4322H 4322 motor
Contextual Info: ISO-9001 CERTIFIED BY DSCC 20 AMP, 200 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID M.S.KENNEDY CORP. M.S. KENNEDY CORP. 4707 Dey Road Liverpool, N.Y. 13088 4322 315 701-6751 MIL-PRF-38534 QUALIFIED FEATURES: 200V, 20 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 1.0°C/W (Each MOSFET)

500W TRANSISTOR AUDIO AMPLIFIER

Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Contextual Info: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,

sot-23 pinout

Abstract: 431 sot23-5 FAN21SV06 11n60f FAN7385 FAN7382 FAN7380 fan3000 5N60 datasheet 4N60 fairchild
Contextual Info: Power Seminar 2007 – New Product Update Q3/Q4 Jon Harper, Market Development Manager, Industrial & White Goods Systems, Europe September 2007 www.fairchildsemi.com Products for Power Supplies • • • • • Power33 and Power56 MOSFETs Low input voltage drivers: FAN3xxx

Contextual Info: IXDN430 / IXDI430 / IXDD430 / IXDS430 30 Amp Low-Side Ultrafast MOSFET / IGBT Driver Features General Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 30A Peak