P-CH MOSFET Search Results

sot-363 n-channel mosfet

Abstract: sot-363 p-channel mosfet Dual N-Channel mosfet sot-363 marking code 12 SOT-363 amplifier high current sot-363 p-channel mosfet MARKING 3C5 CMKDM3590 Dual P-Channel mosfet sot-363 SOT-363 marking th CMKDM3575
Contextual Info: Central CMKDM3590 N-CH/N-CH CMKDM7590 P-CH/P-CH CMKDM3575 N-CH/P-CH SURFACE MOUNT N-CHANNEL AND P-CHANNEL DUAL ENHANCEMENT-MODE COMPLEMENTARY MOSFETS TM Semiconductor Corp. DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are combinations of dual N-Channel and P-Channel

GSS4569

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/09/20 REVISED DATE : N-CH BVDSS 40V N-CH RDS ON 40m N-CH ID 5.0A P-CH BVDSS -40V N-CH RDS(ON) 100m N-CH ID -4.4A GSS4569 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4569 provide the designer with the best combination of fast switching, ruggedized device design, low

GT2530

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : N-CH BVDSS 30V N-CH RDS ON 72m N-CH ID 3.3A P-CH BVDSS -30V N-CH RDS(ON) 150m N-CH ID -2.3A GT2530 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT2530 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

GP4565

Abstract: 40v N- and P-Channel dip
Contextual Info: Pb Free Plating Product ISSUED DATE :2006/05/12 REVISED DATE : N-CH BVDSS 40V N-CH RDS ON 25m N-CH ID 7.6A P-CH BVDSS -40V N-CH RDS(ON) 33m N-CH ID -6.5A GP4565 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GP4565 provide the designer with the best combination of fast switching, ruggedized device design, low

GP4501

Abstract: GP450
Contextual Info: Pb Free Plating Product ISSUED DATE :2006/12/06 REVISED DATE : N-CH BVDSS 30V N-CH RDS ON 28m N-CH ID 7A P-CH BVDSS -30V N-CH RDS(ON) 50m N-CH ID -5.3A GP4501 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GP4501 provide the designer with the best combination of fast switching, ruggedized device design, low

300 Amp mosfet

Abstract: mosfet 400 amp MOSFET FOR 100khz SWITCHING APPLICATIONS 50 Amp Mosfet dual jfet vhf jfet 133 jfet transistor mosfet amp DUAL JFET Pch low voltage mosfet switch 3 amp
Contextual Info: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application 132 JFET N-CH 133 JFET N-CH 221 Dual Gate MOSFET N-CH 222 Dual Gate MOSFET N-CH 312 JFET N-CH JFET P-CH 326 451 452 JFET N-CH JFET N-CH 454 Dual Gate MOSFET N-CH

GT3585

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/02/16 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 75m N-CH ID 3.5A P-CH BVDSS -20V N-CH RDS(ON) 160m N-CH ID -2.5A GT3585 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT3585 provide the designer with best combination of fast switching, low on-resistance and

GT2531

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : N-CH BVDSS 16V N-CH RDS ON 58m N-CH ID 3.5A P-CH BVDSS -16V N-CH RDS(ON) 125m N-CH ID -2.5A GT2531 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GT2531 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely

GTT3585

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/02/23 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 75m N-CH ID 3.5A P-CH BVDSS -20V N-CH RDS(ON) 160m N-CH ID -2.5A GTT3585 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GTT3585 provide the designer with best combination of fast switching, low on-resistance and

Contextual Info: MA6301S10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA6301S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

GSS2030

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/04/24 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 30m N-CH ID 6A P-CH BVDSS -20V N-CH RDS(ON) 50m N-CH ID -5A GSS2030 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS2030 provide the designer with the best combination of fast switching, ruggedized device design, low

20C1D

Abstract: GP2030S
Contextual Info: Pb Free Plating Product ISSUED DATE :2005/08/10 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 60m N-CH ID 2.6A P-CH BVDSS -20V N-CH RDS(ON) 80m N-CH ID -2.3A GP2030S N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GP2030S provide the designer with the best combination of fast switching, ruggedized device design, low

GSS9510

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/11/18 REVISED DATE : N-CH BVDSS 30V N-CH RDS ON 28m N-CH ID 6.9A P-CH BVDSS -30V N-CH RDS(ON) 55m N-CH ID -5.3A GSS9510 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS9510 provide the designer with the best combination of fast switching, ruggedized device design, low

GSS4501S

Abstract: Mosfet n-channel
Contextual Info: Pb Free Plating Product ISSUED DATE :2006/04/27 REVISED DATE : N-CH BVDSS 30V N-CH RDS ON 33m N-CH ID 6A P-CH BVDSS -30V N-CH RDS(ON) 50m N-CH ID -5.3A GSS4501S N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4501S provide the designer with the best combination of fast switching, ruggedized device design,

GSS4500

Contextual Info: Pb Free Plating Product ISSUED DATE :2006/04/21 REVISED DATE : N-CH BVDSS 20V N-CH RDS ON 30m N-CH ID 6A P-CH BVDSS -20V N-CH RDS(ON) 50m N-CH ID -5A GSS4500 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4500 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: MA3302S10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA3302S100 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck

Contextual Info: MA4803S10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA4803S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

MA4302

Contextual Info: MA4302S10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA4302S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA4306S10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA4306S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA4301S10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA4301S is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA3304S10000000 N-Ch and P-Ch Fast Switching MOSFETs General Description Product Summery The MA3304S100 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck

Contextual Info: SSM6L35FU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L35FU High-Speed Switching Applications Analog Switch Applications • Unit: mm N-ch: 1.2-V drive P-ch: 1.2-V drive • N-ch, P-ch, 2-in-1 • Low ON-resistance Q1 N-ch: Ron = 20

GSS4507

Contextual Info: Pb Free Plating Product ISSUED DATE :2005/08/29 REVISED DATE :2005/09/29B N-CH BVDSS 30V N-CH RDS ON 36m N-CH ID 6.0A P-CH BVDSS -30V N-CH RDS(ON) 72m N-CH ID -4.2A GSS4507 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GSS4507 provide the designer with the best combination of fast switching, ruggedized device design, low

Contextual Info: MA4306D10000000 N-Ch and P-Ch 40V Fast Switching MOSFETs General Description Product Summery The MA4306D is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter