GPP30M
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SUNMATE electronic Co., LTD
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3.0A axial leaded silicon rectifier diode in DO-201AD package, with 50 to 1000V peak repetitive reverse voltage, low forward voltage drop, high surge current capability, and operating junction temperature from -65 to +125°C. |
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GP30M
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SUNMATE electronic Co., LTD
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3.0A axial leaded silicon rectifier diode in DO-201AD package, with 50 to 1000V repetitive reverse voltage range, low forward voltage drop, high surge current capability, and operating junction temperature from -65 to +125°C. |
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EGP30M
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SUNMATE electronic Co., LTD
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3.0 A glass passivated fast efficient rectifier diode in DO-201AD molded plastic case, with 50 to 1000 V reverse voltage range, low forward voltage drop, and high surge current capability. |
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RGP30M
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SUNMATE electronic Co., LTD
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Fast recovery rectifier diodes in DO-201AD package with 3.0 A average forward current, 200 A surge current, 50 to 1000 V peak reverse voltage, and reverse recovery time of 150 to 500 ns.3.0 A average forward current, 200 A surge current fast recovery rectifier diode in DO-201AD package, 50 to 1000 V recurrent peak reverse voltage, 150 ns typical reverse recovery time, suitable for high efficiency applications.Fast recovery rectifier diodes in DO-201AD package, 3.0 A average forward current, 50 to 1000 V repetitive peak reverse voltage, 200 A surge current, 150 to 500 ns reverse recovery time, suitable for high-efficiency power applications. |
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GPP30M
