NCE30P30K
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NCEPOWER
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NCE30P30K is a -30V, -30A trench MOSFET with low RDS(ON) of 18mΩ at VGS=-10V, advanced gate charge characteristics, and high current capability in a TO-252-2L package. |
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RGP30K
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SUNMATE electronic Co., LTD
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Fast recovery rectifier diodes in DO-201AD package with 3.0 A average forward current, 200 A surge current, 50 to 1000 V peak reverse voltage, and reverse recovery time of 150 to 500 ns.3.0 A average forward current, 200 A surge current fast recovery rectifier diode in DO-201AD package, 50 to 1000 V recurrent peak reverse voltage, 150 ns typical reverse recovery time, suitable for high efficiency applications.Fast recovery rectifier diodes in DO-201AD package, 3.0 A average forward current, 50 to 1000 V repetitive peak reverse voltage, 200 A surge current, 150 to 500 ns reverse recovery time, suitable for high-efficiency power applications. |
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GP30K
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SUNMATE electronic Co., LTD
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Axial leaded silicon rectifier diode GP30A with 3.0A average rectified current, 50-1000V DC blocking voltage, low forward voltage drop, high surge current capability, and operating junction temperature from -65 to +125°C. |
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NCE40P30K
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NCEPOWER
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NCE40P30K is a -40V, -30A P-channel MOSFET with advanced trench technology, offering low RDS(ON) of 18mΩ at VGS=-10V and low gate charge, suitable for high current switching applications. |
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GPP30K
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SUNMATE electronic Co., LTD
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3.0A axial leaded silicon rectifier diode in DO-201AD package, with 50 to 1000V DC blocking voltage, low forward voltage drop, high surge current capability, and operating temperature range from -65 to +125°C. |
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EGP30K
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SUNMATE electronic Co., LTD
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3.0 A glass passivated fast efficient rectifier diode in DO-201AD molded plastic case, with 50 to 1000 V reverse voltage range, low forward voltage drop, and high surge current capability.EGP30A-EGP30M glass passivated fast rectifier diodes in DO-201AD package, 50-1000V reverse voltage, 3.0A average rectified current, low forward voltage drop, high surge current capability, reverse recovery time 50-75ns. |
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NCE15P30K
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NCEPOWER
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NCE15P30K is a -150V, -30A trench power MOSFET with RDS(ON) less than 88mΩ at VGS=-10V, featuring low gate charge, high cell density design, and advanced trench technology for efficient switching performance. |
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NCE55P30K
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NCEPOWER
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P-Channel Enhancement Mode Power MOSFET with -55V drain-source voltage, -30A continuous drain current, and 40mΩ maximum RDS(ON) at -10V VGS, featuring low gate charge and high-density cell design for efficient power switching applications. |
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NCE30P30K
