RGP25J
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SUNMATE electronic Co., LTD
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Fast recovery rectifier diodes in DO-201AD package, 50 to 1000V blocking voltage, 2.5A average rectified current, 2.0A forward voltage at 2.0A, low forward drop, high surge capability, operating junction temperature -65 to +125°C. |
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NCE15P25JI
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NCEPOWER
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NCE15P25JI is a P-channel enhancement mode power MOSFET with -150V drain-source voltage, -25A continuous drain current, and low on-resistance of 135mΩ at VGS=-10V, utilizing advanced trench technology for high efficiency. |
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AK15P25J
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AK Semiconductor
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AK15P25J P-Channel Enhancement Mode Power MOSFET with -150V drain-source voltage, -25A continuous drain current, and low on-resistance of 135mΩ typical at VGS=-10V, featuring advanced trench technology for high efficiency in portable and battery-powered applications. |
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NCE15P25J
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NCEPOWER
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NCE15P25J is a P-channel enhancement mode power MOSFET with -150V drain-source voltage, -25A continuous drain current, and low on-resistance of 135mΩ at VGS=-10V, utilizing advanced trench technology for high efficiency. |
Original |
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AK15P25JI
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AK Semiconductor
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AK15P25JI P-Channel Enhancement Mode Power MOSFET with -150V drain-source voltage, -25A continuous drain current, 135mΩ RDS(ON) at VGS=-10V, and TO-251 package. |
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RGP25J
