P CHANNEL STRIPFET Search Results

JESD97

Abstract: S8C5H30L STS8C5H30L
Contextual Info: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced

Contextual Info: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/P-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET General features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced

Transistor Mosfet N-Ch 30V

Abstract: STS7C4F30L
Contextual Info: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω

STS7C4F30L

Abstract: Transistor Mosfet N-Ch 30V
Contextual Info: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω

STS7C4F30L

Abstract: P Channel STripFET Transistor Mosfet N-Ch 30V
Contextual Info: STS7C4F30L N-CHANNEL 30V - 0.018 Ω - 7A SO-8 P-CHANNEL 30V - 0.070 Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω

Contextual Info: STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 40 A, P-channel 30 V, 0.028 Ω typ., 30 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet — preliminary data Features Type VDSS STL40C30H3LL N-channel STL40C30H3LL (P-channel) RDS(on) max

STS7C4F30L

Contextual Info: STS7C4F30L N-CHANNEL 30V - 0.018Ω - 7A SO-8 P-CHANNEL 30V - 0.070Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STS7C4F30L(N-Channel) STS7C4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.080 Ω 7A 4A TYPICAL RDS(on) (N-Channel) = 0.018 Ω

STS3C2F80

Contextual Info: STS3C2F80 N-CHANNEL 80V - 0.069 Ω - 3A SO-8 P-CHANNEL 80V - 0.20 Ω - 2.3A SO-8 STripFET II POWER MOSFET TYPE STS3C2F80 N-Channel STS3C2F80(P-Channel) • ■ ■ VDSS RDS(on) ID 80 V 80 V < 0.08 Ω < 0.25 Ω 3A 2.3 A TYPICAL RDS(on) (N-Channel) = 0.069 Ω

STS3C2F80

Abstract: MOSFET T
Contextual Info: STS3C2F80 N-CHANNEL 80V - 0.069 Ω - 3A SO-8 P-CHANNEL 80V - 0.20 Ω - 2.3A SO-8 STripFET II POWER MOSFET TYPE STS3C2F80 N-Channel STS3C2F80(P-Channel) • ■ ■ VDSS RDS(on) ID 80 V 80 V < 0.08 Ω < 0.25 Ω 3A 2.3 A TYPICAL RDS(on) (N-Channel) = 0.069 Ω

JESD97

Abstract: S8C5H30L STS8C5H30L
Contextual Info: STS8C5H30L N-channel 30V - 0.018 Ω - 8A/p-channel 30V - 0.045 Ω - 5A - SO-8 Low gate charge STripFET III MOSFET Features Type VDSS RDS on ID STS8C5H30L(N-channel) 30V <0.022 8A STS8C5H30L(P-channel) 30V <0.056 5A • Conduction losses reduced ■ Switching losses reduced

STS7C4F30L

Abstract: P Channel STripFET Transistor Mosfet N-Ch 30V STSC4F30L
Contextual Info: STS7C4F30L N-CHANNEL 30V - 0.018Ω - 7A SO-8 P-CHANNEL 30V - 0.018Ω - 4A SO-8 STripFET POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STSC4F30L(N-Channel) STSC4F30L(P-Channel) 30 V 30 V <0.022 Ω <0.060 Ω 70 A 70 A TYPICAL RDS(on) (N-Channel) = 0.018 Ω

pch 1275

Abstract: PowerFLAT
Contextual Info: STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 40 A, P-channel 30 V, 0.024 Ω typ., 30 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet — preliminary data Features Order code STL40C30H3LL N-channel STL40C30H3LL (P-channel) VDS RDS(on) max

n-channel so8 60v

Abstract: STS4C3F60L s4c3f60l Back Light Inverter
Contextual Info: STS4C3F60L N-CHANNEL 60V - 0.045 Ω - 4A SO-8 P-CHANNEL 60V - 0.100 Ω - 3A SO-8 StripFET MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID STS4C3F60L (N-Channel) STS4C3F60L (P-Channel) 60 V 60 V < 0.055 Ω < 0.120 Ω 4A 3A •

STS3C3F30L

Contextual Info: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ

Transistor Mosfet N-Ch 30V

Abstract: P Channel STripFET STS3C3F30L P-channel N-Channel power mosfet SO-8
Contextual Info: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ

STS3C3F30L

Contextual Info: STS3C3F30L N-CHANNEL 30V - 0.050 Ω - 3.5A SO-8 P-CHANNEL 30V - 0.140 Ω - 3A SO-8 STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS3C3F30L(N-Channel) STS3C3F30L(P-Channel) 30 V 30 V < 65 mΩ < 165 mΩ 3.5 A 3A TYPICAL RDS(on) (N-Channel) = 50 mΩ

Transistor Mosfet N-Ch 30V

Abstract: STS8C5H30L S8C5H30L P-CHANNEL
Contextual Info: STS8C5H30L N-CHANNEL 30V - 0.018Ω - 8A SO-8 P-CHANNEL 30V - 0.045Ω - 5A SO-8 LOW GATE CHARGE StripFET III MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID STS8C5H30L (N-Channel) STS8C5H30L (P-Channel) 30 V 30 V < 0.022 Ω < 0.055 Ω

STS3C2F100

Contextual Info: STS3C2F100 N-CHANNEL 100V - 0.110 Ω - 3A SO-8 P-CHANNEL 100V - 0.320 Ω - 1.5A SO-8 COMPLEMENTARY PAIR STripFET POWER MOSFET TYPE VDSS RDS on ID STS3C2F100(N-Channel) STS3C2F100(P-Channel) 100 V 100 V < 0.145Ω < 0.380Ω 3.0 A 1.5 A • ■ ■ ■

S857

Abstract: S8C5H30L STS8C5H30L
Contextual Info: STS8C5H30L N-channel 30 V, 0.018 Ω, 8 A, P-channel 30 V, 0.045 Ω, 5 A SO-8 low gate charge STripFET III MOSFET Features Type VDSS RDS on max ID STS8C5H30L(N-channel) 30 V < 0.022 Ω 8A STS8C5H30L(P-channel) 30 V < 0.055 Ω 5A • Conduction losses reduced

S8C5H30L

Abstract: STS8C5H30L
Contextual Info: STS8C5H30L N-channel 30 V, 0.018 Ω, 8 A, p-channel 30 V, 0.045 Ω, 5 A SO-8 low gate charge STripFET III MOSFET Features Type VDSS RDS on max ID STS8C5H30L(n-channel) 30 V < 0.022 Ω 8A STS8C5H30L(p-channel) 30 V < 0.055 Ω 5A • Conduction losses reduced

Contextual Info: STS8C6H3LL N-channel 30 V, 0.019 Ω typ., 8 A, P-channel 30 V, 0.024 Ω typ., 6 A STripFET Power MOSFET in a SO-8 package Datasheet — preliminary data Features • ■ Type VDSS RDS on max ID N-channel 30 V < 0.021 Ω 8A P-channel 30 V < 0.030 Ω 5A

Contextual Info: STS8C6H3LL N-channel 30 V, 0.019 Ω typ., 8 A, P-channel 30 V, 0.024 Ω typ., 6 A STripFET Power MOSFET in a SO-8 package Datasheet - preliminary data Features Order code Channel VDS RDS on max ID 0.021 Ω 8A 0.030 Ω 5A N STS8C6H3LL 30 V P • STripFET™V N-channel Power MOSFET

Contextual Info: STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 10 A, P-channel 30 V, 0.024 Ω typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet - production data Features Order code Channel VDS 30 V P 1 0.03 Ω @ 10 V 8A • RDS on * Qg industry benchmark

JESD97

Abstract: STS3C2F100
Contextual Info: STS3C2F100 N-channel 100V - 0.110 Ω - 3A SO-8 Complementary pair STripFET Power MOSFET General features Type VDSS RDS on ID STS3C2F100(N-channel) 100V <0.145 3.0A STS3C2F100(P-channel) 100V <0.380 1.5A • Standard outline for easy automated surface