P CHANNEL POWER TRENCH MOSFET Search Results

diode TA 20-08

Abstract: P-channel Trench MOSFET MOSFET with Schottky Diode schottky diode 100A DIODE marking 8L MOSFET 20V 100A Bi-Directional P-Channel mosfet
Contextual Info: SPC4703 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC4703combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an DFN3X2-8L package. The Trench MOSFET is the P-Channel enhancement mode power

P-Channel MOSFET code 1A

Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
Contextual Info: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect

Schottky Diode 20V 5A

Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
Contextual Info: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect

FDMC4435BZ

Contextual Info: FDMC4435BZ tm P-Channel Power Trench MOSFET -30V, -18A, 20.0mΩ Features General Description „ Max rDS on = 20.0mΩ at VGS = -10V, ID = -8.5A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has

P-channel power mosfet SO-8

Abstract: MARKING CODE AA circuit diagram of mosfet buck boost SO-8 mosfet low-voltage MARKING QG 6 PIN MOSFET SO-8 PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 NTMS4101PR2
Contextual Info: NTMS4101PR2 Product Preview Trench Power MOSFET -20 V, P-Channel, SO-8 Single This P-Channel device was designed using ON Semiconductor’s leading trench technology for low RDS on performance in the SO-8 package for high power and current handling capability. The low

PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AA

Abstract: NTMD4102PR2
Contextual Info: NTMD4102PR2 Product Preview Trench Power MOSFET -20 V, P-Channel, SO-8 Dual This P-Channel device was designed using ON Semiconductor’s leading edge trench technology for low RDS on performance in the SO-8 dual package for high power and current handling capability.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ7252KDW N Channel + P Channel Power MOSFET SOT-363 DESCRIPTION This N Channel + P Channel MOSFET has been designed using advanced power trench process to optimize the RDS ON .

Contextual Info: NTR4101PT1 Product Preview Trench Power MOSFET -20 V, P-Channel, SOT-23 Single This P-Channel device was designed using ON Semiconductor’s leading trench technology for low RDS on performance in the SOT-23 package for surface mount PCBs. The low RDS(on) performance is

Contextual Info: P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description ̈ Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and

FDC3535

Abstract: marking 535
Contextual Info: P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description „ Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and

Contextual Info: NTJD4103PT1 Product Preview Trench Power MOSFET -20 V Dual, P-Channel, Gate Zener, SC-88 This P-Channel dual device was designed with a small footprint package 2 X 2 mm and ON Semiconductor’s leading RDS(on) trench technology for reduced footprint and increased circuit efficiency. The

419B-02

Abstract: NTJD2101PT1
Contextual Info: NTJD2101PT1 Product Preview Trench Power MOSFET -8.0 V Dual, P-Channel, Gate Zener, SC-88 This P-Channel dual device was designed with a small footprint package 2 X 2 mm and ON Semiconductor’s leading trench process featuring low RDS(on) for reduced footprint and increased circuit

FDMC4435BZ

Abstract: 63a23 05MAX00 FDMC4435B
Contextual Info: FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 m: Features General Description „ Max rDS on = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

FDMC4435BZ

Abstract: RCA 395 fairchild top marking mo-229 pad layout trench mosfet MO-229 63A23
Contextual Info: FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 m: Features General Description „ Max rDS on = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

Contextual Info: FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 mΩ Features General Description „ Max rDS on = 20 mΩ at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2352 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As P-Channel Logic Level MOSFET, UT2352 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.

UTC654L-AG6-R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTC654 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As P-Channel Logic Level MOSFET, UTC654 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.

157 C

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2352 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As P-Channel Logic Level MOSFET, UT2352 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.

Contextual Info: FDMC4435BZ P-Channel Power Trench MOSFET -30 V, -18 A, 20 m: Features General Description „ Max rDS on = 20 m: at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This

UT2352G-AE3-R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2352 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As P-Channel Logic Level MOSFET, UT2352 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTC654 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION As P-Channel Logic Level MOSFET, UTC654 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2352 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION  As P-Channel Logic Level MOSFET, UT2352 has been optimized for battery power management applications. And it’s produced using UTC’s advanced Power Trench process.

vcx 02 544

Contextual Info: FDC697P P-Channel 1.8V Specified Bottomless PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications.

FLMP SuperSOT-6

Abstract: FDC697P
Contextual Info: FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. It has been optimized for battery power management applications. • –8 A, –20 V