P CHANNEL POWER MOS FET POWER SWITCHING Search Results

8A SOT-89

Abstract: XP162A02D5PR
Contextual Info: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state

XP162A02D5PR

Abstract: XP162A11C0PR XP162A12A6PR sot89 fet XP162A11
Contextual Info: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state

XP132A0265SR

Contextual Info: XP132A0265SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.065Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package • Applications ■ General Description ■ Features The XP132A0265SR is a P-Channel Power MOS FET with low on-state

XP132A01A0SR

Contextual Info: XP132A01A0SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.105Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package • Applications ■ General Description ■ Features The XP132A01A0SR is a P-Channel Power MOS FET with low on-state

XP162A01B5PR

Contextual Info: XP162A01B5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.25Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A01B5PR is a P-Channel Power MOS FET with low on-state

XP152A01D8MR

Contextual Info: XP152A01D8MR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.48Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP152A01D8MR is a P-Channel Power MOS FET with low on-state

XP132A0340SR

Abstract: 383 SOP-8
Contextual Info: XP132A0340SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.04Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package • Applications ■ General Description ■ Features The XP132A0340SR is a P-Channel Power MOS FET with low on-state

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2715GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The μPA2715GR is P-Channel MOS FET designed for power management applications of notebook computers and Li-ion battery protection circuit.

XP134A11A1SR

Contextual Info: XP134A11A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A11A1SR is a P-Channel Power MOS FET with low on-state

XP134A01A9SR

Contextual Info: XP134A01A9SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.19Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A01A9SR is a P-Channel Power MOS FET with low on-state

XP134A02A1SR

Abstract: XP134A11A1SR XP134A1275SR XP135A1145SR
Contextual Info: XP134A02A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A02A1SR is a P-Channel Power MOS FET with low on-state

sot89-3

Contextual Info: MOS FET P-CHANNEL POWER MOS FET FOR SWITCHING The S-90P series is a P-channel power MOS FET that realizes low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection

G1133

Abstract: C10535E C10943X MEI-1202 6 PIN case mos fet p-channel uPA1523BH
Contextual Info: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1523B P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The µPA1523B is P-channel Power MOS FET Array that built PACKAGE DIMENSIONS in millimeters in 4 circuits designed for solenoid, motor and lamp driver.

PA1523BH

Abstract: TEA-1037 C10535E C10943X MEI-1202 TEA-1035
Contextual Info: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR mPA1523B P-CHANNEL POWER MOS FET ARRAY SWITCHING INDUSTRIAL USE DESCRIPTION The mPA1523B is P-channel Power MOS FET Array that built PACKAGE DIMENSIONS in millimeters in 4 circuits designed for solenoid, motor and lamp driver.

XP135A1145SR

Contextual Info: Power MOS FET ◆N-Channel/P-Channel Power MOS FET •Applications ◆DMOS Structure ●Notebook PCs ◆Low On-State Resistance : 0.045Ω max (Nch) ●Cellular and portable phones ●On-board power supplies 0.110Ω (max) (Pch) ◆Ultra High-Speed Switching

uPA2715

Abstract: UPA2715GR M15022
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2715GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µPA2715GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook

Contextual Info: _ DATA SHEET_ MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.

dc m13

Abstract: PT22
Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2718GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2718GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2719GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2719GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2717GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2717GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook

Contextual Info: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR µ PA2715GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING Unit: mm The µ PA2715GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook

2SJ202

Abstract: 2SK1580
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ202 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DRAWING Unit: mm DESCRIPTION The 2SJ202 is a P-channel vertical type MOS FET which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require

C11892E

Abstract: D12971E D1297 2SJ494 TEA-1035
Contextual Info: DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ494 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS DESCRIPTION in millimeter This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. 4.5±0.2

PA1770

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1770 SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The µPA1770 is a P-channel MOS Field Effect Transistor designed for power management applications of portable machines.