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    P CHANNEL MOSFET 100V Search Results

    P CHANNEL MOSFET 100V Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9530 Preliminary POWER MOSFET -14A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF9530 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.


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    UF9530 -100V UF9530 -100V, UF9530L-TA3-T UF9530G-TA3-T UF9530L-TM3-T UF9530G-TM3-T UF9530L-TN3-T PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF5210 POWER MOSFET -40A, -100V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UF5210 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.


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    UF5210 -100V UF5210 O-220 UF5210L-TA3-T UF5210G-TA3-T QW-R502-845 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9520S Preliminary POWER MOSFET -6.8A, -100V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UF9520S is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.


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    UF9520S -100V UF9520S O-220F1 UF9520SL-TF1-T UF9520SG-TF1-T QW-R502-892 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.


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    UT23P09 -100V UT23P09 UT23P09L-TA3-T UT23P09G-TA3-T O-220 QW-R502-844 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT50P10 Power MOSFET -50A, -100V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT50P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also


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    UTT50P10 -100V UTT50P10 -100V UTT50P10L-TA3-T UTT50P10G-TA3-T O-220 QW-R502-607 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT12P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can


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    UTT12P10 UTT12P10 UTT12P10L-TM3-T UTT12P10G-TM3-T UTT12P10L-TN3-T UTT12P10G-TN3-T UTT12P10L-TN3-R UTT12P10G-TN3-R QW-R502-722 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT12P10 Power MOSFET 100V, 12A P-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC UTT12P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can


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    UTT12P10 UTT12P10 O-252 UTT12P10L-TN3-R UTT12P10G-TN3-R QW-R502-722 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P10 Power MOSFET 25A, 100V P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand


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    UTT25P10 UTT25P10 UTT25P10L-TA3-T UTT25P10G-TA3-T UTT25P10L-TN3-T UTT25P10G-TN3-T UTT25P10L-Tat QW-R502-597 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P10 Power MOSFET 25A, 100V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand


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    UTT25P10 UTT25P10 UTT25P10L-TA3-T UTT25P10G-TA3-T UTT25P10L-TN3-T UTT25P10G-TN3-T UTT25P10L-TN3-R UTT25P10G-TN3-R QW-R502-597 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT18P10 Power MOSFET 100V, 19A P-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC UTT18P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed, cost-effectiveness and a minimum on-state resistance. It can


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    UTT18P10 UTT18P10 O-252 UTT18P10L-TN3-R UTT18P10G-TN3-R QW-R502-619 PDF

    ECH8620

    Contextual Info: ECH8620 Ordering number : ENA0659 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs ECH8620 General-Purpose Switching Device Applications Features • • The ECH8620 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and


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    ECH8620 ENA0659 ECH8620 A0659-6/6 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UFR9120 Preliminary Power MOSFET P CHANNEL POWER MOSFET „ DESCRIPTION The UTC UFR9120 is a P-channel power MOSFET using UTC’s advanced processing technology to provide customers a minimum on-state resistance and high switching speed


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    UFR9120 UFR9120 UFR9120L-TN3-R UFR9120G-TN3-R UFR9120L-TN3-T UFR9120G-TN3-T O-252 QW-R502-570 PDF

    Contextual Info: IRF9510 Semiconductor Data Sheet April 1999 -3.0A, -100V, 1.200 Ohm, P-Channel Power MOSFET This P-Channel enhancem ent mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested and guaranteed to withstand a specified level of


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    IRF9510 -100V, O-220AB -100V PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT25P10 Power MOSFET -25A, -100V, 0.150 Ω, P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand


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    UTT25P10 -100V, UTT25P10 -100V UTT25P10L-TA3-T UTT25P10G-TA3-T QW-502-597 PDF

    Contextual Info: IRFP9140 Semiconductor April 1999 Data Sheet -19A, -100V, 0.200 Ohm, P-Channel Power MOSFET This is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. It is a P-Channel


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    IRFP9140 -100V, O-247 -100V 200i2 PDF

    IRFD9110

    Abstract: TA17541
    Contextual Info: IRFD9110 Data Sheet January 2002 0.7A, 100V, 1.200 Ohm, P-Channel Power MOSFET Features • 0.7A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


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    IRFD9110 IRFD9110 TA17541 PDF

    Contextual Info: FQD5P20 / FQU5P20 P-Channel QFET MOSFET -200 V, -3.7 A, 1.4 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


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    FQD5P20 FQU5P20 PDF

    Contextual Info: FQT3P20 P-Channel QFET MOSFET -200 V, -0.67 A, 2.7 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


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    FQT3P20 OT-223 PDF

    Contextual Info: FQP3P20 P-Channel QFET MOSFET -200 V, -2.8 A, 2.7 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


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    FQP3P20 O-220 FQP3P20 PDF

    Contextual Info: FQP3P50 P-Channel QFET MOSFET -500 V, -2.7 A, 4.9 Ω Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


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    FQP3P50 O-220 FQP3P50 PDF

    Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 IRF9150 -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


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    IRF9150 -100V, -100V PDF

    Contextual Info: FW360 Ordering number : ENN7556A N-Channel and P-Channel Silicon MOSFETs FW360 General-Purpose Switching Device Applications Features • • • • The FW360 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling high-density mounting.


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    FW360 ENN7556A FW360 100ms) FW360/D PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9640 Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET  DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device has an advantage of including fast switching, low on-resistance, ruggedized device design


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    UF9640 UF9640 QW-R502-484 PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UF9640 Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET „ DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device has an advantage of including fast switching, low on-resistance, ruggedized device design


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    UF9640 UF9640 QW-R502-484 PDF