P CHANNEL IRL Search Results

mosfet ir 840

Abstract: IRLML6402 irlml6402 equivalent IRLML6402 micro3 IC BA 9 AN-994 g 995
Contextual Info: PD- 93755 IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize

IRLMS1503

Abstract: IRLMS1902 IRLMS5703 IRLMS6702 p-channel 250V 30A power mosfet IRLMS6802PBF
Contextual Info: PD- 94897 IRLMS6802PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D D 1 6 D 2 5 D G 3 4 S VDSS = -20V RDS on = 0.050Ω Top View Description These P-Channel MOSFETs from International Rectifier

Contextual Info: SIEMENS ILD620/620GB QUAD CHANNEL ILQ620/620GB DUAL CHANNEL AC INPUT PHOTOTRANSISTOR OPTOCOUPLER FEA TU R ES • Identical Channel to Channel Footprint ILD620 C rosses to TL P 620-2 ILQ620 C rosses to T LP 620-4 • Current Transfer Ratio CTR at lp= ± 5 mA

EIA 481-E

Abstract: IRLMS2002
Contextual Info: PD- 93758B IRLMS2002 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel 2.5V Rated A D D 1 6 D 2 5 D G 3 4 S VDSS = 20V RDS on = 0.030Ω T o p V ie w Description These N-Channel MOSFETs from International Rectifier

IRLMS6702

Contextual Info: PD - 91414C IRLMS6702 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS on P-Channel MOSFET D D G Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

Contextual Info: Product specification IRLML5203PbF HEXFET Power MOSFET l l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free Halogen-Free VDSS RDS on max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V

Contextual Info: Product specification IRLML6302PbF l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free *  VDSS = -20V  ' 6  RDS(on) = 0.60Ω

*l5602s

Abstract: IRL5602S
Contextual Info: PD- 91888 IRL5602S HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated D VDSS = -20V RDS on = 0.042W G ID = -24A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced

Contextual Info: Product specification IRLML6402PbF l l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free Halogen-Free G 1 VDSS = -20V 3 D S RDS(on) = 0.065Ω

irlml2502

Abstract: IRLML2502 G IRLML5103 IRLML5103 -30V
Contextual Info: PD - 91260E IRLML5103 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -30V G RDS(on) = 0.60Ω S Description Fifth Generation HEXFETs from International Rectifier

IRlZ14

Abstract: IRLZ10
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET IRLZ14/10 FEATURES • Low er R ds< on • Excellent voltage stability • Fast sw itching spe eds • Ru gg ed polysilicon gate cell structure • Lo w er input ca p acita n ce • Extended sa fe operating area • Improved high tem perature reliability

BSS138 NXP

Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
Contextual Info: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety

Contextual Info: MOTOROLA Order this document by MHW7292/D SEMICONDUCTOR TECHNICAL DATA The RF Line 110-Channel 750 MHz CATV Line Extender Amplifier • Specified for 110-C hannel Performance • Broadband Power Gain — @ f = 4 0 - 7 5 0 M H z G p = 29 dB (Typ) • Broadband Noise Figure

Contextual Info: LTC1155 TECHNOLOGY Dual High Side M ic ro p o w e r MOSFET Driver F€RTUR€S DCSCRIPTIOn • Fully Enhances N-Channel Power MOSFETs ■ 8uA Standby Current ■ 85uA ON Current ■ Short-Circuit Protection ■ Wide Power Supply Range: 4.5V to 18V ■ Controlled Switching ON and OFF Times

MRF6S19060N

Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S19060NBR1 MRF6S19060NR1 AD250
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S19060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

J9-32

Abstract: J973 465B A114 AN1955 JESD22 MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 mrf6s21140hs
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 4, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

diode smd yw

Abstract: SMD MARKING CODE 9b 2b
Contextual Info: In te r n a tio n a l IO R pd R e c tifie r 1 R p r e l im in a r y L M 9 . i 54 o S 1 9 0 2 HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET Description Fifth Generation H E X F E T s from International Rectifier

Contextual Info: PD- 95591 IRL620SPbF • Lead-Free www.irf.com 1 07/21/04 IRL620SPbF 2 www.irf.com IRL620SPbF www.irf.com 3 IRL620SPbF 4 www.irf.com IRL620SPbF www.irf.com 5 IRL620SPbF 6 www.irf.com IRL620SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

IRLI640GPBF

Contextual Info: PD- 95654 IRLI640GPbF • Lead-Free www.irf.com 1 7/26/04 IRLI640GPbF 2 www.irf.com IRLI640GPbF www.irf.com 3 IRLI640GPbF 4 www.irf.com IRLI640GPbF www.irf.com 5 IRLI640GPbF 6 www.irf.com IRLI640GPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

marking code 541 Diode

Abstract: data by 476 diode EIA-541 IRFR120 IRFU120 U120 DT marking code DIODE MARKING 541 diode marking code 7 marking code rg
Contextual Info: PD - 95601A IRLR110PbF IRLU110PbF • Lead-Free www.irf.com 1 1/10/05 IRLR/U110PbF 2 www.irf.com IRLR/U110PbF www.irf.com 3 IRLR/U110PbF 4 www.irf.com IRLR/U110PbF www.irf.com 5 IRLR/U110PbF 6 www.irf.com IRLR/U110PbF Peak Diode Recovery dv/dt Test Circuit

7105

Abstract: IRFD120 marking code rg
Contextual Info: PD-95978 IRLD014PbF • Lead-Free www.irf.com 1 12/20/04 IRLD014PbF 2 www.irf.com IRLD014PbF www.irf.com 3 IRLD014PbF 4 www.irf.com IRLD014PbF www.irf.com 5 IRLD014PbF 6 www.irf.com IRLD014PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations

Contextual Info: PD- 95591 IRL620SPbF • Lead-Free Document Number: 91302 07/21/04 www.vishay.com 1 IRL620SPbF Document Number: 91302 www.vishay.com 2 IRL620SPbF Document Number: 91302 www.vishay.com 3 IRL620SPbF Document Number: 91302 www.vishay.com 4 IRL620SPbF Document Number: 91302

Contextual Info: PD- 95653 IRLI630GPbF • Lead-Free Document Number: 91313 7/26/04 www.vishay.com 1 IRLI630GPbF Document Number: 91313 www.vishay.com 2 IRLI630GPbF Document Number: 91313 www.vishay.com 3 IRLI630GPbF Document Number: 91313 www.vishay.com 4 IRLI630GPbF Document Number: 91313

2SK568

Abstract: P channel irl 2SC568 w111
Contextual Info: 2 S K5 6 8 ‘MG8G4GM 1 MG8G6EM1 SEMICONDUCTOR TECHNICAL DATA OO- -O W lxl co vO 1O m w co CN io -W111 m i 1& X o So U -j— W 00 I l i o as I i r i o + H4- in go £ M vO o &0 -wl r l 6' go 00 CD £ IrL ò+ G T 1 A2 A TOSHIBA CORPORATION - 384 - só -Wl r i