P 307 Search Results

Contextual Info: ~G1 SOLID STATE DE I 3075001 0017^00 01E 17980 3875081 G E SOLID STATE D n Signal Transistors_ MPS6531, MPS6532, MPS6534 Silicon Transistors TO-92 T h e G E / R C A M P S 6531, M P S 6 5 3 2 are N P N a n d M P S 6 5 3 4 is a P N P planar epitaxial p a ssiva ted silico n transistors d e ­

Contextual Info: DIALIGHT CATALOG P/N PEAK EMISSION WAVELENGTH nm LED C H I P 59 7- 3111- 307 AIGaAs 59 7- 3221- 307 A 1 1nGaP 59 7- 3301- 307 Ga P RED AMBER GREEN VIEWING ANGLE (°) 2 *0 C A P A C 1TANCE ( p F ) ; @Vf =0; f =1 MHz 1/2 LUMI NOUS FORWARD VOLTAGE R E V E R S E

Contextual Info: REVISION A DO NOT SCALE FROM THIS PRINT "A" SMA-P-P-X-ST-TH1 DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] GENDER -P: PLUG 8.00 .315 HEX REF TERMINATION -TH1: THROUGH HOLE TYPE -P: PCB PLATING SPECIFICATION -H: GOLD (SEE TABLE 1) 0.92 .036 (REF) "A" 7.80 .307 (REF)

MN103002

Contextual Info: The correction table in The Revised Edition of MN103002A LSI User's Manual From 3rd Edition 1st Printing to 5th Edition Errors Page - P.2 P.2 P.3 P.3 P.4 P.4 - - P.8 P.9 P.12 P.17 P.19 P.22 P.24 Corrections Page - (MN103002AYB (CSP) has been added to the products described in

Contextual Info: G e n e r a l - P u r p o s e C o m p e n s a t e d O p e r a t io n a l A m p lif ie r s SG107/207/307 SG741/741C The S G 1 0 7 /2 0 7 /3 0 7 o ffe r excellent in p u t SG1217/3217 These devices are iden tical to the SG 741 / S G 7 4 1 /741C are pin com patible w ith the

VC547

Abstract: VC118 VC133 VC533 VC539 VC556 VC568 VC582 VC599
Contextual Info: 3074474 3074474 E A S T R O N .CORF | □□□□113 1 o 'p ù T 'if Eastron HIGH CAP Voltage Variable Capacitor . . . .D o tlg n o d for low an d modlvm frequency a p p lic a tio n requiring largo value of c a p a cltan c o and high Q. Tho VC 133 p ro v ld o t tho HIGHEST CAPACITANCE av allab lo In tho tubm lniaturo g la ts packago. Tho

C185T

Abstract: CD74AC191
Contextual Info: Technical Data G E SOLID STATE 17E D 3075001 00545^0 & • CD54/74AC191 C D 54/74A C T 191 PO P I ASYN . P A R A L L E L n i Presettable Synchronous 4-Bit Binary Up/Down Counter P2 P 3 51 il io! al LO A D EN A B LE U P /D O W N - ^ TclOTAL COUNT Type Features:

Sprague 32D

Abstract: SPRAGUE 622d 5033R C312C 708D1 704C1
Contextual Info: COMPETITOR CROSS REFERENCE I " P IN U P S P H ILIP S P H ILIP S C O M P E T IT O R C O M P E T IT O R C O M P O N EN T S PAGE C O M P E T IT O R C O M P E T IT O R C O M P O N EN T S

upc 1185 h

Abstract: mobis Delay linear sweep generator using 555 timer Anritsu ML524B operation manual for vip tracking gsm and gps technology 26UA42 MU909014A1 nokia 2700 classic circuit diagram MF2400C MA8120E
Contextual Info: Outline of Anritsu Corporation p.2 Quality, Reliability Assurance System, and Effort for Environmental Considerations p.3 How to Use This Catalog p.4 Sales, Shipping, and Service Information p.5 Sales Network p.6 Index p.7 Model Number Index p.9 New Products Descriptions

A571 TRANSISTOR

Abstract: BATTERY LEVEL INDICATOR CT918 transistor 1247 IC NE 555 UMA1018 UMA1000LT ic 1 ne 555 All Microphone SA612
Contextual Info: P hilips Sem iconductors Selection guide Alphanumerical index ALPHANUMERIC INDEX PAGE P 80C552/(P)83C552 single-chip 8-bit microcontroller 49 (P)80CL31/(P)80CL51 low-voltage single-chip 8-bit microcontroller 54 (P)80CL410/(P)83CL410 low-voltage/low-power single chip 8-bit microcontroller with l2C-bus

2N5320 RCA

Abstract: 2N5320 I3007 2N5321 RCA I3001 RCA 2N5321 sl 100b trs 2n5320 RCA 2N5322 2N5321
Contextual Info: 3875081 G E SOLID STATL — - File Num ber - — 01 DE.1 3075001 0017124 0 • u | — — — - D T-73- High-Speed Power Transistors 325 2N5320, 2N5321, 2N5322, 2N5323 Complementary N-P-N & P-N-P Silicon Power Transistors General-Purpose Types for Small-Signal,

Contextual Info: REVISION A "A" SMA-P-P-X-ST-TH1 DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] GENDER -P: PLUG PRODUCT MANUFACTURED Pb THIS WITH LEAD-FREE PROCESSING 8.00 .315 HEX REF PLATING SPECIFICATION -H: GOLD (SEE NOTES 7 & 8) (SMA-P-P-H-ST-TH1-PIN) (SMA-P-P-F-ST-TH1-BDY)

str 40200

Contextual Info: G E SOLID STATE 01 D E j 3A7S0Ö1 GGlMblS «4 | CA3096, CA3096A, CA3096C “T ' H 3 Z S N-P-N/P-N-P Transistor Array Five-Independent Transistors: Three n-p-n and Two p-n-p Applications:

MTS-506

Abstract: MTS506
Contextual Info: 3 X DRW NO. ▼ ZONE REV SCR NUMBER SHT2 BY DESCRIPTION ADDED P/NS 4 7 0 - 1 0 7 5 - 1 0 1 AND 4 7 0 - 1 0 7 5 - 6 0 1 J JPRX-788MQP.VER01 K JP R X -7ES P W 4.VER01 ADDED P/N L JPRX-7PNHRT.VER01 ADDED P/Ns M JP R X -7 T B G M L .VER01 470-1205-101 470-3075-101

VC306

Abstract: VC307 VC309 VC310 VC315 VC321 VC322 VC333 VC347 capacitor EA
Contextual Info: 3074474 DD0D11M 3 | 3074^74 EASTRON CORP D T 01-19 Eastron NORMALIZED C A P A C IT A N C E VS. VOLTAGE T Y P I C A L O o f 50 Voltage Variable Gapaeilor te > S t) E a s t t o n 's H ig h Q V o lta g e V a ria b le C a p a c ito rs co m b ine h ig h v o lta g e w ith hig h tuning ra tio to p ro v id e su p e rio r

C5148

Abstract: bb138
Contextual Info: Standard Single P, Q, and R-Band Antennas Type Number: HMDxxpa-bzz Electrical Specifications xx = Number of bays 8, 12, 16, 24, or 32 p = Polarization (H or V) a = Azimuth pattern type (O, C, W, or N; see page 307) zz = Beam tilt in tenths of a degree b = P, Q, or R

Contextual Info: Standard Single P, Q, and R-Band Antennas Type Number: H M D x x p a -b zz XX = p = Electrical Specifications Number of bays 8,12,16, 24, or 32 Polarization (H or V) a = Azimuth pattern type (0, C, W, or N; see page 307) zz = Beam tilt in tenths of a degree

Contextual Info: SANYO SEMICONDUCTOR FC107 CORP E2E D 7 cn 7 D 7 b Q0G7372 1 T-Sl-ll # P N P Epitaxial Planar S ilicon C o m p o site Transistor 2066 Switching Applications 3075 with Bias Resistances R1=47ki2, R2=47kO Features • On-chip bias resistors (Ri = 47kfl,R2= 47k£2)

ASY77

Abstract: OC75 GERMANIUM SMALL SIGNAL TRANSISTORS ASY26 ACY34 oc75 oc76 oc77 Germanium power Germanium Power Transistors OC74
Contextual Info: GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES Voo Type Hy y VIK, V Max hrc IcBO Va y Max @ y es y M Max Cal M in Max , mA C ob P Max fa b \1H /. Min Pack Outline Pöwer Dissipation @ 25° Mh ACY33 ACY34 ACY35 ACY36 ACY38 P P P P P 32 30 30 32 15

OC74

Abstract: OC76 GERMANIUM SMALL SIGNAL TRANSISTORS OC71 OC75 oc75 oc76 ASY76 ASY77 ASY80 OC72
Contextual Info: GERMANIUM SMALL SIGNAL TRANSISTORS PRO ELECTRON TYPES Voo Type Hy y VIK, V Max hrc IcBO Va y Max @ y es y M Max M in Max Cal, mA C ob P Max fa b \1H /. Min Pack Outline Pöwer Dissipation @ 25° Mh ACY33 ACY34 ACY35 ACY36 ACY38 P P P P P 32 30 30 32 15 10

Contextual Info: 12 II 10 9 8 7 6 i- 1 1 70491 1 50 C I R C U I T 2.7 9 REF. r ~ JT ~Z ] T V ÿi Hf PI I PH P I PI HP IPI PH PI I PH PI I P H P I I I A 3 2 SHOWN -307 (7 .80) I- 1 l/TM iw t m iw t m iw t m iw t m ÏWIÎM L L ' P " R EF .

Contextual Info: 10 I 6 I 5 P A C K A G IN G 8.89 ±0.05 P A R T No. 9 5 6 2 2 -3 8 8 1 9 5 6 2 2 -3 9 8 1 SPEC. P K -9 5 1 2 2 S H T 1. P K -9 5 1 2 2 -0 0 6 0^^<x2> .307 RECOMMENDED 1.60 ±0.05 x2 .4 5 0 ±.004 RECOMMENDED P.C.B LAY O U T VIEW FROM COMPONENT SIDE TECHNICAL SPECIFICATIONS:

Contextual Info: MIL 30 MIL 307 RED LED LAMP SUPER B R IG H T M IL 31 M IL 32 M IL 38 D iffu se d red lens red LE O Lam p Clear red lens red LE D Lam p T ransp are nt lens red L E D Lam p M IL 3& M IL 317 D iffu se d D iffu se d M IL 327 M IL 387 Clear red lens red L E D Lam p

a696

Abstract: 3000 watt inverter circuit diagram GE-SPCO C712 k111a LA2100 Snubber circuit Design
Contextual Info: GE-SPCO S ta tic P o w er C om ponent O p era tio n M a lvern .P A USA /? i Vi 3074504 DGGG1S2 5 34E D G E CO/ STATIC PUR CMPNT IGESP PG5.024A 9/1/88 SOFT RECOVERY POWER DIODE 2400V / 3000Hz A696 The A696 soft recovery diode is designed for high frequency applications