P 26 AD Search Results

adm1192

Abstract: VADR
Contextual Info: Data Sheet Digital Power Monitor with Clear Pin and ALERT Output ADM1192 FEATURES Powered from 3.15 V to 26 V Precision current sense amplifier Precision voltage input 12-bit ADC for current and voltage readback ALERT output allows basic P-channel FET hot swap up to 26 V

AP2532GY

Abstract: rd25
Contextual Info: AP2532GY RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET D2 ▼ Low Gate Charge N-CH BVDSS S1 ▼ Fast Switching Performance RDS ON D1 ▼ Surface Mount Package 130mΩ ID G2 SOT-26 30V S2 2.4A P-CH BVDSS

AP2531GY

Contextual Info: AP2531GY RoHS-compliant Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge Drive ▼ Low On-resistance N-CH BVDSS D2 S1 RDS ON D1 ▼ Surface Mount Package 58mΩ ID G2 SOT-26 16V S2 3.5A P-CH BVDSS G1

Contextual Info: 1 & KRL KRL STYLE C-l/4 P-l/2 C-l/2 (P-1A) C-1A C-1B (P-1C) C-1C C-1D (P-2) C-2 (P-2A) C-2A C-2B (P-2C) C-2C (P-2D) C-2D (P-2E) C-2E (P-2F) C-2F (P-3) C-3 C-4 (P-5) C-5 (P-6) C-6 C-7 C-7A C-10A P & C SERIES Wlrewound Power Resistors MIL-R-26 MIL-R39007 RW-70

IC LM 258

Abstract: 158JG 358AP LM29Q4 2904P top 258 pn LM 158 358d IC LM 351 D2231
Contextual Info: LM 158, LM258, LM358 LM258A, LM358A, LM2904 DUAL OPERATIONAL AMPLIFIERS D2231, JUNE 1976 — REVISED AUGUST 1988 Wide Range of Supply Voltages: Single Supply . . . 3 V to 30 V LM2904 . . . 3 V to 26 V , or Dual Supplies D. JG . OR P P A C K A G E (TOP VIEW)

190ref

Contextual Info: AP2607GY RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement S ▼ Small Package Outline D D ▼ Surface Mount Device -20V RDS ON 52mΩ ID G SOT-26 BVDSS -5A D D Description D Advanced Power MOSFETs utilized advanced processing techniques

Contextual Info: AP6925GY RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL MOSFET WITH SCHOTTKY DIODE D ▼ Low Gate Charge NC K ▼ Surface Mount Package G ▼ RoHS Compliant SOT-26 BVDSS -16V RDS ON 150mΩ ID S - 1.6A A D A S K Description Advanced Power MOSFETs from APEC provide the

AP2603GY

Contextual Info: AP2603GY Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement S ▼ Small Package Outline D D ▼ Surface Mount Device G BVDSS -20V RDS ON 65mΩ ID -5.0A D SOT-26 D Description D Advanced Power MOSFETs utilized advanced processing techniques

Contextual Info: FLR016XP, FLR016XV m ïm :il GaAs F E T and H E M T Chips fU J Ilb U FEATURES • High Output Power: P-|<jB = 20.0dBm Typ. • High Gain: G ^ b = 8.0dB(Typ.)(FLR016XP) G 1dB = 9.0dB(Typ.)(FLR016XV) • High PAE: = 25%(Typ.)(FLR016XP) il add = 26%(Typ.)(FLR016XV)

Contextual Info: GENERAL INSTRUMENT 27C256 PRELIMINARY INFORMATION 256K 32K x 8 CMOS UV Erasable PROM FEATURES PIN CONFIGURATIONS Top View V p p E •1 A 12C 2 28 □ VDD 27 □ A14 A7tZ 3 26 H A13 A6 C 4 25 □ A8 A5C 5 24 □ A9 A4 d The 27C256 is available in an extensive selection of

Contextual Info: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S1R26 Microcontroller D ATA SHE E T D S -LM3S 1R 26 - 1 3 4 4 2 . 2 5 4 9 S P M S 221H C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated

Contextual Info: H i gh p e r f o r m a n c e » 6 4 K x 16 II AS 7 C18 10 26 LL CMOS SRAM A 6 4 K x l 6 In telliw att1'• low power CMOS SRAM Advance information • O p tim iz e d d e s ig n fo r b a tte r y o p e r a te d p o r ta b le s y ste m s • E a sy m e m o r y e x p a n s i o n w i t h CE, O E in p u t s

Contextual Info: 37bô5 22 QQlfl4êO lfc>G « P L S B M GEC PIESSEY SEMICONDUCTORS DC1514/21/26 SILICON SCHOTTKY X-BAND WAVEGUIDE DETECTOR DIODES DESCRIPTION APPLICATIONS This general purpose diode available in the microstrip package is suitable for applications requiring high performance

Contextual Info: MTM761110LBF MTM761110LBF Silicon P-channel MOSFET Unit: mm for Switching „ Features y Low drain-source ON resistance:RDS on typ = 26 mΩ (VGS = -4.5 V) y Low drive voltage: 1.8 V drive y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)

MAX6316

Abstract: MAX6320
Contextual Info: ykiyjxivki 19-0496; Rev 1; 4/98 5-Pin ¡j P S u p e r v i s o r y Ci r c u i t s w i t h Watchdog and Manual Reset _ F e a t u r e s ♦ Small 5-Pin SOT23 Package ♦ Available in 26 Reset Threshold Voltages: 2.5V to 5V in 100mV Increments

RMS-262

Abstract: t375 QFG-16224 QFG-16200 16207
Contextual Info: PART NO. "P"=3.5 MAX [.138] "H" *QFG-1 18±0.25 [.709] 18.5-20 11.4 [.449] [.728-.787] 13±0.25 [.512] *QFG-2 24±0.25 [.945] 25-26 10.4 [.409] [.984-1.024] 18±0.25 [.709] HOLE SIZE "T" INSIDE OUTSIDE DIAMETER DIAMETER "ID" "OD" MATERIAL 24.5±0.25 [.965]

MF Electronics

Abstract: SG-615 SG615P PIN-FOR-PIN REPLACEMENT
Contextual Info: SURFACE MOUNT P package CRYSTAL OSCILLATORS HCMOS 3.3V P3390, P3392 J-Lead Surface Mount Commercial: -20º to 70ºC TRISTATE, 1 MHz to 66.6667 MHz SPECIFICATIONS P3390/P3392 Frequency Range 1 MHz – 26 MHz Description 26.001 MHz – 66.6667 MHz The P3390/P3392 are replacements for the

Contextual Info: FLM7785-8D FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 6.0dB (Typ.) High PAE: riadd = 26% (Typ.) Low IM3 = -45dBc@Po = 28dBm Broad Band: 7.7 ~ 8.5GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: r m COPYRIGHT BT TCP CONNECTOR ALL RIGHTS RESERVED. MECHANICAL: 105 .020 I .14 5±.01 0 .425 0.O62 2X — 0.1 26(2X ) - ELECTRICAL: 706ET MAGNETIC CIRCUIT AA Q a. 01 575 TO P OF a: PCI ANODE TYP EMM EMI2 .010 - Suggested Panel Cutout T2 LUaLUal rnsmsi

IC ATA 2388

Abstract: ATA 2388
Contextual Info: SN54125, SN54126, SN54LS125A. SN54LS126A, SN74125, SN74126, SN74LS125A, SN74LS126A QUADRUPLE BUS BUFFERS WITH 3 STATE OUTPUTS DECEMBER 19B3 - REVISED MARCH 1988 S N 54125, SN5 41 26 , SN 54LS125A, S N 5 4 L S 1 2 6 A . . J OR W P AC KA G E • Quad Bus Buffers

Contextual Info: Doc No. TT4-EA-10433 Revision. 2 Product Standards MOS FET MTM761110LBF MTM761110LBF Silicon P-channel MOSFET Unit : mm For Switching 2.0 0.2 6 5 4 1 2 3 0.13 „ Features 1.7 2.1 y Low Drain-source On-state Resistance : RDS on typ. = 26 mΩ (VGS = -4.5 V)

TMS320D

Abstract: dpdi EC K2U 74299 TMS320C30 EF vs EC LS74
Contextual Info: TLC32044C, TLC32044I VOICE BAND ANALOG INTERFACE CIRCUITS D3098, MARCH 1988-REV ISED DECEMBER 1990 Advanced LinCMOS Silicon-Gate Process Technology N PA C KA G E T O P V IE W NU C 1 ^ 2 8 D n u RESET C 2 27 U n u EODR C 3 26 J I N FSR C 4 24 D A U X IN +

Contextual Info: m A X I A L COLOR CODE C A P A C IT O R HOW TO O R D E R ACC — F 104 M 500 26 P i i i 114-1 A B C D E F G B A: ^n° n*SIJ P R O D U C T TYPE ñS'J TYPE CODE ACC S É # 14 TEMPERATURE CHARACTERISTICS tt [=1 AXIAL COL O R CODE C A P A C I T O R S - 5 5 + 1 25°C

cqfp120

Abstract: 16-BIT ASYNCHRONOUS COUNTER digital Counter FROST64 CQFP-120
Contextual Info: A AURELIA µ SPT Rev. N. 2 Data: 26/02/02 Title: Frost64 – Technical Specifications M i c r o e l e t t r o n i c a S. p. A. Technical Specification FROST64 A AURELIA µ M i c r o e l e t t r o n i c a S. p. A. Via Giuntini 13 – 56023 – frazione Navacchio Cascina PI - ITALIA