P 181 Y Search Results

AM-181

Abstract: AMC-181 AMS-181
Contextual Info: y a n A M P ct o m p a n y Low Noise Amplifier, 8.5 dB Gain 10-400 MHz AM-/AMC-/AMS-181 V2.00 Features • • • • TO-8-1 1.5 dB Typical Midband Noise Figure +31 dBm Typical Midband Intercept Ideal for Broadband IF Applications Fully Hermetic Package AMS-181

Contextual Info: Next Generation NGCON 181-043 Rear Release Genderless Terminus for Next Generation (NGCON) Fiber Optic Connectors 181-043-126 M Product Series Basic Number Dash Number (Table I) E P Y T S T E T O A N L T R G O O I F N R S Y O P DECTORRATI M - Multimode S - Singlemode

Contextual Info: S N 5 4 A S 1 181. S N 7 4 A S 1 181 ARITHMETIC LOGIC UNITS/FUNCTION GENERATORS D 19 15 , M A Y 1985 Package Options Include Compact 300-m il or Standard 600-m il DIPs and Both Plastic and Ceramic Chip Carriers S N 5 4 A S 1 181 . . . J T OR J W P AC KAG E

Contextual Info: jtià < m an A M P c Low Noise Amplifier, 8.5 dB Gain 10 - 400 MHz AM-/AMC-/AMS-181 Features • TO-8-1 1.5 dB T ypical M id band N oise Figure • +31 dB m T ypical M idband In terce p t • Id eal fo r B ro a d b a n d IF A pplications • Fully H erm etic P ack ag e AMS-181

DB-1MS

Contextual Info: SIEMENS BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz Q62702-F1271 1=C It RFs m B F P 181 PO ESP: Electrostatic discharge sensitive device, observe handling precaution!

a5882

Abstract: D191 SN74AS1181 SN74AS882 SN54AS1181
Contextual Info: SN54AS1181, SN74AS1181 ARITHMETIC LOGIC UNITSjFUNCTION GENERATORS D 191 5. M A Y 1985 S N 5 4 A S 1 181 . . . J T OR J W PAC KA G E S N 7 4 A S 1 181 . . D W , NT, OR N W P AC KA G E Package O ptio ns Include C om p act 30 0 -m il or S tandard 6 0 0 -m il DIPs and B oth Plastic

399P

Abstract: 5KA43A SS12 1N5817 AJ170A 5KE440CA SBL1640CT-2 l4030
Contextual Info: NUMERICAL INDEX . 451 BA157GP thru B A 1 59 G P .327 FE6A thru F E 6 D .123 1 5KE6.8 thru 1 5KE440CA .455 BY228 . 181 FEP6AT thru FEP6DT . 125

d1915

Abstract: a5882 D191 SN74AS1181
Contextual Info: SN54AS1181, SN74AS1181 ARITHMETIC LOGIC UNITS/FUNCTION GENERATORS D1915. MAY 1985 Package Options Include Compact 300-m il or Standard 600-m il DIPs and Both Plastic and Ceramic Chip Carriers S N 5 4 A S 1 181 . . . J T OR J W PAC KA G E S N 7 4 A S 1 181 . . . D W , N T, OR N W P AC KA G E

D1915

Abstract: IC-033 SN74AS1181 25A2s1 SN74AS882
Contextual Info: SN54AS1181, SN74AS1181 ARITHMETIC LOGIC UNITS/FUNCTION GENERATORS PRODUCT PREVIEW D 1 91 5 , M A Y 1 9 8 5 — R E V IS E D M A Y 1 9 8 6 S N 5 4 A S 1 181 . . . J T OR J W PAC KA G E S N 7 4 A S 1 181 . . D W , N T, OR N W P AC KA G E Package Options Include Plastic "Sm all

siemens ferrite n22 p14

Abstract: Siemens Ferrite B65541 EC35 Siemens ferrite core ETD54 n62 U93 QUANTA ARALDITE ay 105 EC70 N27 Siemens Ferrite N47 EC52 N27 FERRITES N67
Contextual Info: Contents Page 5 Selector Guide Index of Part Numbers 11 25 SIFERRIT Materials 31 General - Definitions Application and Processing Notes Packing 103 121 163 Quality Considerations Standards and Specifications 177 181 RM Cores 185 PM Cores 287 P Cores P Core Halves P Cores for Proximity Switches

BD182

Abstract: BD183 BD 782 BD181 T800MA BD 183 J BD 183
Contextual Info: BD 181 B D 182 BD 183 PNP S ILIC O N TR A N S IS TO R S , HOMOBASES TR AN S IS TO R S PNP S IL IC IU M , HO M O B A S E S - LF large signal power amplification A m p lific a tio n B F grands sig naux de puissance - High current switching BD 181 BD 182 BD 183

s22b

Abstract: bf181 s21b b 514 transistor bf 181 bf181 transistor ic s21b J BF181 MAX S21B
Contextual Info: *BF181 NPN S IL IC O N T R A N S IS T O R , P LA N A R TRANSISTOR NPN S ILIC IU M , PLANAR sfc Preferred device D isp o sitif recommandé The NPN plan transi to r BF 181 is intended for use in U H F converter and oscillator stages television receivers. Le transistor plan NPN BF 181 est destiné à être u tili­

YPN006-025H

Abstract: YSK006-016AH YSK006 Ysk015-025AH K623 YSK006-015AH YPN015-016H ysk015 ysk006-032 027AH
Contextual Info: N SERIES MINI MODULE Module P Width is 1 unit 10 HypertacÒ removable signal contacts TERMINAL STYLE Ref. D File no. E102195 Ò Ò File no. LR83002-4 Straight solder dip YPN006-047H pin YSK006-032AH (socket) Æ.024 (.60) .181 (4.60) Æ.035 (.90) Æ.051

LCD EPSON sed1181

Abstract: SED1181 SED1278F PF471 40 PIN LCD MONITOR CONNECTION DIAGRAM 16 x 2 lcd display
Contextual Info: EPSON PF471 -04 S E D 1 181 F la/D la Dot Matrix Extension LCD Driver • 64-bit High Voltage Outqut • Displat Duty Static to 1/32 • CM OS High-Voltage Process • OVER VIEW T h e S E D 1 181 F l a is a s e g m e n t colum n d river c a p a b le of driving a high-contract, lo w -cap acity dot m atrix

VOB250

Contextual Info: SP. 181 A.C./D.C. M A IN S H.F. P EN TO D E R A T IN G . Heater Voltage . Heater C u rre n t Amps. M aximum Anode Voltage M aximum Screen Voltage *M utual Conductance (m A /V ) *Taken at Ea=200 18.0 0.2 250 250 8.5 Es=200 ; Eg 1.5. T Y P IC A L O P E R A T IO N .

M947

Abstract: m190 M740 m820 2f y M147 CM-400 M158 M192 M3501
Contextual Info: .406 MAX . .815 MAX . .181 MAX . .374 MAX . P art Number Des ign V oltage A mps C M559 C M127 C M285 C M740 C M820 C M159 C M259 C M444 C M447 1.38 2.47 C M555 C M147 F ilament T ype MS C P L ife Hours .56 .25 .33 .45 50 30 S -2 C -2R 5.00 5.00 6.00 6.30 .09

000w212

Abstract: K10W raychem 222k174 RT1325 RT-1325 RK-6713 raychem ED 7 6713 polyolefin elastomer .2As
Contextual Info: t t / c a Specification Electronics Raychem Control Drawing 222K121 thru 185 s u p p l ì ed. a Part as b) Part afte r recovery. unrestricted 10 .181 D i o ^ P o t t i n g Port J ‘ 12) D ia P o t t i n g DIA Por t Dia Hole DIMENSIONS in mi Li¡metres in inches,for reference)

25CK

Contextual Info: PART NUMBER O C P -P C D 114 / X UNCONTROL­LED DOCUMENT REV. I E.C.N. NUMBER AND REVISION COMMENTS TOP VIEW ANDDE MARK 1. 2. 3. 4. ANODE CATHODE EMITTER COLLECTOR 4,60 LO,181] h- 6,50 [0 ,2 5 6 ] n 0,40 LO,016] 4 0,26 [0,010] 2 RLS, 13,00° ,62 [0,300]

Contextual Info: SHEET OF 6.00 14.40 -[.5 67 ]- [.2 3 6]- 17.71 [.697] 2x 01.80 [.071] 8.50 [.335] 3.30 [.130] SQ. n 15.00 [.591] 2.50 [.098] SQ. 4x 01.30 [.051] RECOMMENDED P.C.B. LA Y D U T 1.00 [.039] a ? £ - Ò P u sh r en [-181] r [039] _ J _ T I .UU

Contextual Info: engineered to light up your design www.vcclite.com 1.800.522.5546 T-1 1/2 Wedge Base .197 MAX . .571 MAX . .217 MAX . .181 MAX . P art Number Des ign V oltage A mps C M6502 C M1103 4.0 6.0 .250 .030 C M1104 C M3105 C M6516 C M6521 6.0 6.0 6.0 6.0 C M6522 C M6515

SSL-LX4064USBD

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER SSL-LX4064USBD CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E.S .D . HANDLING PROCEDURES WHEN WORKING WITH THIS PART. 04,60 [ 0 0 ,181] REV. 04.00 [0 0 .1 5 7 ] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 T PARAMET[R MIN

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL31C181JHFNNNE CAP, 180㎊, 630V, ±5%, C0G, 1206  Description :  Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series CL 31 C 181 J H F N N N E ① ② ③

SSL-LX4064HD

Contextual Info: UNCONTROLLED DOCUMENT REV. A 04,60 [ 00 ,181] PART NUMBER REV. SSL-LX4064HD A E.C.N. NUMBER AND REVISION COMMENTS DATE E.C.N. #10BRDR. & REDRAWN IN 3D. 4 .1 8 .0 1 04.00 [ 00 .157 ] ELEC TRO -O P TIC AL CHARACTERISTICS Ta = 2 5 T PARAMETER MIN PEAK WAVELENGTH

Contextual Info: SPECIFICATION • Supplier : Samsung electro-mechanics  Samsung P/N : CL10C181JB8NFNC CAP, 180㎊, 50V, ±5%, C0G, 0603  Description :  Product : Multi-layer Ceramic Capacitor A. Samsung Part Number ① Series CL 10 C 181 J B 8 N F N C ① ② ③