P 181 OPTO Search Results

Contextual Info: 147 Central Avenue Hackensack, New Jersey 07601 Tel: 201-489-8989 • Fax: 201-489-6911 CMD93-21 & 22 Series SMT Leds D E S C R I P T I O N S A N D .177±.004 4.5±0.1 .181±.004 (4.6±0.1) CATHODE ANODE .106±.004 (2.7±0.1) .118±.004 (3.0±0.1) .016 (0.40)

Optocouplers App Note

Abstract: diod zo
Contextual Info: T I L 1 18-1, T I L 1 18-2, TIL118-3 OPTOCOUPLERS D 1 6 0 7 , NOVEMBER 1 9 7 3 -R E V IS E D JULY 1 9 8 9 Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor High Direct-Current Transfer Ratio High-Voltage Electrical Isolation . . . 3.5 3 kV

1SS240

Abstract: ss240 vr-1M ST-40 09345 ST40 diode
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 L7 ¿ F | SOTTESO □ D D ci34S O | T O S H I B A . D I S C R E T E /OPTO 1SS240 67C 09345 -r-os-o J S Silicon E p ita xial-P la n a r Type- - Diode ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm FEATURES: . Low Forward Voltage

AN6675

Abstract: MAN6910 AN6695 MAN6710 OPTOELECTRONICS MAN-6910 ID010 MAN-6740
Contextual Info: OPTOELECTRONICS DISPLAYS 0.56" Displays F o rw a rd V o lta g e W ave­ P a rt S o u rc e N um ber D e s c rip tio n C o lo r le n g th S e g m e n t Face V F V \p (n m ) C o lo r C o lo r ty p m a x Orange Orange 2.2 Orange 2.2 L um in o us In te n s ity

2SC2563

Contextual Info: 9097250 T OS HI BA DE J ~Sh TOSHIBA {DISCRETE/OPTOï TOTTESD 56C CD I SCRETE/OPTO 0DD7aSl 07 251 H Ü 2SA1093 SI LICON PNP EPITAXIAL TYPE PCT PROCESS) Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. l a 9 (MX 3 .8 + Q .8 FEATURES; . . . . . Complementary to 2SC2563.

Contextual Info: T O X 9 10 5 L a rg e A r e a S ilic o n Q u a d ra n t P h o to d io d e «IO# Texas Optoelectronics, Inc. FEATURES DESCRIPTION The TOX 9105 is a high-speed quadrantgeometry, high-resistivity P-type silicon photodiode. This device is designed specifically

BL370

Contextual Info: ¡mi" G ifffl m m a l l i Texas Optoelectronics, Inc. T IE S 3 5 u m A rs e n id e In ffrared -Em ittin g D io d e s DESIG NED TO E M IT NEAR IN FR A R ED R A D IA N T ENERGY WHEN FO RW ARD BIASED • High Speed, High Efficiency • Hemispherically Shaped 18-Mi1-Diameter Chip

Contextual Info: HITACHI/ OPTOELECTRONICS 54E D • 44^205 0 0 1 2 03 7 3,20 ■ H I T M HL7836G/MG GaAIAs LD Description T The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light

PC 181 OPTO

Abstract: 2SA1093 2SC2563
Contextual Info: ~5b TOSHIBA {DISCRETE/OPTO> De TDTTESD 0D075S1 H 5 òC 0 7 2 5 1 9097250 TOSHIBA {DISCRETE/OPTO SILICO N PNP E P IT A X IA L TY PE (PCT PROCESS) 2 S A 1 0 9 3 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Ì59 M /Y X FEATURES; . . . . . 0 3 .8 + Q 8

L-354GD-H302

Abstract: L-354HD red 5mm LED with holder H302 L-354ED-H302 L-354HD-H302 L-354LRD-H302 L-354RD-H302 L-354SRD-H302 L-354URD-H302
Contextual Info: American Opto Plus LED L-354XD-H302 series . 3mm Dia LOW PROFILE LED LAMP WITH H302 HOLDER PACKAGE DIMENSIONS MAIN FEATURES 3mm DIA LOW PROFILE LED LAMP STANDARD 1" LEAD I.C. COMPATIBLE LOW POWER CONSUMPTION Notes: 1.All Dimension are in millimeter. 2.Tolerance is ¡Ó0.25mm 0.010"

L 9104

Abstract: 501184-1 905-138 Amphenol Connectors 5 PIN
Contextual Info: TOI TOX 9104 Silicon PIN Photodiode Texas Optoelectronics, Inc. D ESCRIPTIO N FEATURES This is a silicon PIN photodiode designed for detection of infrared radiation in short length fiber optic and other applications. It is packaged in a modified TO-52 hermetic can which fits

D 5464

Abstract: 5423-PO
Contextual Info: SIEMENS CMPNTS-, OPTO SIEMENS 44E D fl23b32b QGQSMM4 □ H S I E X LH 5423-PO SINGLE HETRO JUNCTION LH 5463-KO DOUBLE HETRO JUNCTION LH 5424-QO DOUBLE HETRO JUNCTION LH 5464-LO SINGLE HETRO JUNCTION HYPER RED GaAIAs T13/4 5mm LED LAMP _

Contextual Info: SIEMENS CMPNTS-, OPTO MME D Ö23b32b [1005120 7 * S I E X SIEM ENS SFH 401 SERIES GaAs INFRARED EMITTER T-41-U Package Dimensions in Inches mm .187(476) .181(4.6) 0.10 ( 2 .54) .216(55) ¿ I f (535) FEATURES Maximum Ratings • Package: 18 A 3 DIN 41 876 (TO 18),

AES2510

Abstract: Q751 S2510 P 181 OPTO
Contextual Info: TOSHIBA {DISCRETE/OPTO> 9097250 TOSHIBA DISCRETE/OPTO £vÆ >ÎpV-’îrjî^- m m m ^ v ^ y c r m 39C 005 16 O 7^ 3 /- /S U H P - C '< X n o jssa^'f ?ffl ( CML) o U H P -0 B a n d Low N o i s e o H ig h Speed . f T = 7 GHz , Ö pe = a 5 d B ( f = 2 0 H z )

cm2141

Abstract: OP130W OP845W
Contextual Info: OPTEK TECHNOLOG Y INC OLE D g t.7TÛSÔ0 OODOlâfl Optoelectronics' Division T V T RW Electronic Components Group \ —Co sI r n v i Product Bulletin 5146 January 1986 NPN Silicon Phototransistors Types 0P841W, 0P842W, 0P843W. OP844W, 0P845W Features Absolute Maximum Ratings HA - 25°C unless otherwise noted)

opto pc357

Abstract: PC357 OPTO2701 PC357 OPTO IS357 E244343 PS2701 PC 181 OPTO P 181 OPTO
Contextual Info: Global Supplier of Optoelectronic Solutions OPTO2701 ALL Product Lead Free, RoHs Compliant Schematic: UL # E244343 Features: 1. Opaque type, mini-flat package. 2. Current transfer ratio CTR:MIN.50% at IF=5mA, Vce=5V 3. Isolation voltage between input and output

Contextual Info: •70/ T O X 9009 G a lliu m A lu m in u m A r s e n id e L ig h t E m ittin g D io d e Texas Optoelectronics, Inc. DESCRIPTION FEATURES High radiance GaAIAs IR LED optimized for coupling to a variety of fibers. The unique LED chip design combines high power coupling with

Contextual Info: TIED56 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED56 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the

OF LED 55B

Abstract: LED55B LED55C LED56 LED56F 55BF ge 55b NMTC LED55BF LED55CF
Contextual Info: Optoelectronic Specifications Infrared Emitter LED55B, LED55C,LED56, LED55BF, LED55CF, LED56F Gallium Arsenide Infrared-Em itting Diode The GE Solid State LED55B-LED55C-LED56 Series are gallium arsenide, light em itting diodes which emit non-coherent, infrared energy with a peak wave length of

cm2141

Abstract: OP130W OP845W 0P844W 0P844
Contextual Info: OPTEK TECHNOLOGY INC DLE D | t.7TflSaO ODOOlflfl Optoelectronics' D ivision T - M l -Id T R W Electronic C om ponents Group 3I r n v w Product Bulletin 5146 January 1985 N P N Silicon Phototransistors Types 0P841W , 0P842W, 0P843W. 0P844W, OP84SW Features

SD5620-001

Abstract: SD5630
Contextual Info: SD5620/5630 Optoschmitt Detector FEATURES . TO-46 metal can package • 6° nominal acceptance angle • TTL/LSTTL/CMOS compatible • High noise immunity output • Buffer (SD5620) or inverting (SD5630) logic available • Two sensitivity ranges . Mechanically and spectrally matched to

C1685 transistor

Abstract: C1685 R transistor H11A1Z transistor c1684 TRANSISTOR C1685 transistor c2090 C1685 C1682 transistor
Contextual Info: QUALITY TECHNOLOGIES VDE APPROVED TRANSISTOR OUTPUT OPTOCOUPLER H11A1 H11A1Z T The H11A1 is a phototransistor-type optically coupled isolator. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with an NPN silicon phototransistor in a standard plastic

PC 181 OPTO

Abstract: MG50N2YS1 16175 MU51
Contextual Info: TD TOSHIBA {DISCRETE/OPTO]- D e J IìGci72S0 DDlbl74 0 | 9097250 TOSHIBA <DISCRETE/OPTO TOSHIBA 90D 16174 SEMICONDUCTOR D TOSHIBA GTR MODULE MG50N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm

Contextual Info: 3875081 G E SO LID 0 1E STATE D 19656 Optoelectronic Specifications_ H A RR IS S E M I C O N D S E C T O R T 37E D B 4 3 02 27 1 0027116 1 -4 I- I HAS Infrared Emitter LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F " Gallium Arsenide Infrared-Emitting Diode