OZ 960 S Search Results

Contextual Info: 7 /8 " TO 1 -3 /4 " DIAMETER BUSHING MOUNT BUSHING MOUNT/SLEEVE BEARING INDUSTRIAL MODEL 4605 HYBRID 3, 5 AND 10-TURN PRECISION POTENTIOMETERS 4605 BUSHING MODEL ELECTRICAL Theoretical Electrical Travel Norm al Resistance Range Extended Resistance Rangel1

Tower Mounted Amplifiers

Contextual Info: ISO 9001 Product Information CERTIFIED 4777 EGSM DUPLEXER Features: ❖ Temperature Stability better than Aluminum ❖ Low Loss 1.0 dB, Typical ❖ Lightweight, Injection Molded Housing ❖ 50 watts CW Power Handling ❖ Available from Stock ❖ Low Cost

Contextual Info: 7 /8 " TO 1 -3 /4 " DIAMETER BUSHING MOUNT BUSHING MOUNT/SLEEVE BEARING INDUSTRIAL MODEL 3605 WIREWOUND 3, 5 A N D 10-TURN PRECISION POTENTIOMETERS 3605 BUSHING MODEL ELECTRICAL 1 All specifications listed apply to units with a total resistance within the normal resistance

7M9102

Abstract: schematic diagram 800 watt power amplifier free d TM164 TM1-64 TQP7M9 TQP7M9102
Contextual Info: TQP7M9102 ½W High Linearity Amplifier Applications • •   Repeaters Mobile Infrastructure CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features          Functional Block Diagram 400-4000 MHz

Contextual Info: 7 /8 " TO 1 -3 /4 " DIAMETER BUSHING MOUNT BUSHING MOUNT/SLEEVE BEARING MODEL 3205, 3206 BUSHING MODEL WIREWOUND 3, 5 A N D 10-TURN PRECISION POTENTIOMETERS 3205/3206 ELECTRICAL 1 All specifications listed apply to units with a total resistance within the normal resistance

SD4701

Abstract: VK-200 200 pF air variable capacitor
Contextual Info: SD4701 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . . DESIGNED FOR CLASS AB LINEAR OPERATION COMMON EMITTER INTERNAL INPUT/OUTPUT MATCHING 26 VOLT, 960 MHz PERFORMANCE: POUT = 45 W MIN. GAIN = 8.5 dB MIN. COLLECTOR EFFICIENCY 50% MIN.

oz 9925

Abstract: CSDZ-20SH-1 directional coupler -400
Contextual Info: CSDZ-20SH-1.1G DIRECTIONAL COUPLER REV: 002, 05/31/07 TECHNICAL DESCRIPTION FEATURES • 0.96 - 1.220 GHz • LOW LOSS • LOW VSWR • HIGH POWER • HIGH DIRECTIVITY • SURFACE MOUNT • TAPE & REEL The Multi-Mix CSDZ-SH series provides a 20 dB coupler with low insertion loss, low VSWR, and high

500 watts amplifier schematic diagram

Abstract: OZ 960 OZ 960 S G200
Contextual Info: PTF 10139 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full

500 watts amplifier schematic diagram

Abstract: NGT 03 G200
Contextual Info: PTF 10139 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10139 is a GOLDMOS FET intended for amplifier applications to 860-960 MHz. This 60–watt device operates at 55% efficiency with 12.5 dB typical gain. Nitride surface passivation and full

CK-30N

Abstract: CK39N 38LN Microlab CK-38N
Contextual Info: Directional Coupler, CK-30N series Quarter Wave Air-line Coupler 806 - 960/1710 - 2200 MHz         6, 10, 15, 20 & 30 dB Coupling Values High Directivity/Isolation Low VSWR and Loss Dual Band Cellular and PCS/UMTS 200 Watt Average Power High Reliability, Low PIM

an 7554

Contextual Info: Directional Coupler, CK-30D series Quarter Wave Air-line Coupler 806 - 960/1710 - 2200 MHz         6, 10, 15, 20 & 30 dB Coupling Values High Directivity/Isolation Low VSWR and Loss Dual Band Cellular and PCS/UMTS 200 Watt Average Power High Reliability, Low PIM

G200

Abstract: f 0952
Contextual Info: PTF 102028 18 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

motorola rf Power Transistor t 228

Contextual Info: MOTOROLA Order this document by MRF10031/D SEMICONDUCTOR TECHNICAL DATA Microwave Long Pulse Power Transistor MRF10031 Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc

0.047 mf capacitor

Contextual Info: GOLDMOS PTF 10137 Field Effect Transistor 12 Watts, 1.0 GHz Description The PTF 10137 is a 12–watt GOLDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 60% efficiency with 18 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

7M9106

Abstract: TQP7M9106 L4024 dap sot 23-5 06035J2R4ABSTR PFB10
Contextual Info: TQP7M9106 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package GND/NC GND/NC GND/NC 19 20 GND/NC 21 22 GND/NC 5 14 6 13 General Description Pin Configuration

Contextual Info: Wireless - Cellular Products Hybrid Couplers Type N - 200 Watts CW Power • • • • Wireless Frequency Bands PCS and Cellular applications 3 dB 90o Crossover Type Type N & TNC Connector Interfaces Midwest Microwave offers this complete series of high

200B

Abstract: 20AWG 700B M252 SD57120
Contextual Info: SD57120 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 120 W WITH 13 dB gain @ 960 MHz • BeO FREE PACKAGE M252 epoxy sealed • INTERNAL INPUT MATCHING

murata 897 Mhz

Abstract: SKY65045-70LF HK160810NJ-T S670 m5 sot89 SOT89 sk45 making S244 SK45 srf transistor GRM39C0G100J050AD
Contextual Info: data sheet SKY65045-70LF: 390–1500 MHz Low Noise Power Amplifier Driver Block Diagram Applications l l l l l l l U  HF television T ETRA radio G  SM, AMPS, PCS, DCS, 2.5G, 3G ISM band transmitters F ixed WCS 8 02.16 WiMAX 3 GPP long term evolution

DN-44FD

Abstract: Microlab/DN-34FD
Contextual Info: Tappers, DN-x4FD series Multi-Band, Lightweight, Unequal Power Dividers 350 - 960 & 1710 - 2,700 MHz  Split ratios from 1000:1 to 2:1  Tetra, PMR, Cellular, UMTS, WiFi & WiMAX  Low specified PIM  500 W Avg Power Rating  Minimal RF Insertion Loss

Contextual Info: I 7 /8 " TO 1 -3 /4 " DIAMETER BUSHING MOUNT BUSHING MOUNT/SLEEVE BEARING MODEL 3702 WIREWOUND 3, 5 A N D 10-TURN PRECISION POTENTIOMETERS 3702 BUSHING MODEL ELECTRICAL 1 All specifications listed apply to units with a total resistance within the normal resistance

OZ 9998

Contextual Info: GSM/3G Penta Band Hybrid PCB Antenna Pulse Part Number W3544A / 3544B Pulse introduces the small hybrid surface mount pickand-place W3544X family of GSM/3G antennas. Board connection is via 6 SMD connection points underneath the antenna. Antennas are delivered in tape and reel

Skyworks PA LTE

Abstract: making S244
Contextual Info: PRELIMINARY DATA SHEET SKY65162-70LF: 400-2700 MHz Linear Power Amplifier Applications GND • UHF television  TETRA radios 4  PCS, DCS, 2.5G, 3G handsets  ISM band transmitters  WCS fixed wireless  802.16 WiMAX  3GPP LTE Features 1 2 RF_IN

Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:

NTE5980

Abstract: NTE5906 NTE5907 NTE6005 "Power rectifier Diode"
Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics: