OW 81 88 Search Results
OW 81 88 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: fax id: 1101 PRELIMINARY _ CY7C1352 '^ y p p j 7 C C ; 256Kx18 Pipelined SRAM with NoBL Architecture • Low s ta n d b y p ow er Features • Pin c o m p a tib le and fu n c tio n a lly equ ivalent to ZBT™ d e vic es M C M 6 3Z 81 8 and M T 55L 25 6L 18 P |
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cy7c1352256kx18 | |
CY7C1352
Abstract: MCM63Z818 MCM63Z819
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cy7c1352mcm63z818mt55l256l18p143-mhz+4 | |
43ac
Abstract: e11011
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cy7c135243ace11011 | |
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Contextual Info: A fa m an A M P co m pa n y Connectorized SPDT GaAs Switch DC - 2 GHz Features SW-229 C-34 • In te g ra te d TTL D river • U ltra Low DC P o w e r C o n su m p tio n • MIL-STD-883 S creen in g A vailable Guaranteed Specifications* From 55»c to +85°c |
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mil-std-883sw-22905ghzf26-1451 | |
6005S12
Abstract: 6012S12 6015S12 qca35 arm 6410
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iec950ul1950mil-hdbk-217f6005s24k2+11 | |
8C702
Abstract: 74AS885 p2231
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sn74as885sn54as885d2661300-mil+3 | |
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Contextual Info: MITSUBISHI M EM ORY CARD D Y N A M I C R A M CARDS 1x512/ x32M DRAM Card 2x512/Oc326/i DRAM Card M F12M 1-L57A TXX" M F14M 1-L57ATXX Connector Type Two-piece 88-pin S D E S C R IP T IO N These DRAM • Extend CARDs are developed based on refresh mode is available. ( 1 2 8 m s / 1024 |
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1x512/2x512/oc326/i1-l57atxx88-pin | |
SOQ D 358
Abstract: 14n12
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ma4td1170soq d 35814n12 | |
1-800-SAMTEC-9Contextual Info: 2m m POWER PLANE QTT,QST SERIES SPECIFICATIONS For complete specifications see www.samtec.com?QTT or www.samtec.com?QST o P U tI It U Insulator Material: Black Liquid Crystal Polymer Term inal M aterial QTT : 10 thru 50 Phosphor Bronze C ontact M aterial (QST): |
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f-206qtt-120-01-l-5qst-110-02-l-t170mhz+2 | |
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Contextual Info: ] QBHOQQD r- J; Z dAl 010" 52‘ ow X3IH1 Z 9 0 7 ( ¿ S ‘ I> ONINBdO 13N Vd G3QN3WINOD3U U - = 19111 _ J o o o o _ 2 dU OW (20*1) o I — ! J L -2121 SldVd r (92*) •dio 9 n am z ao j — *1 dw v M snonNtiNoo I-— l (aiHOlH ONV L *SDI 3 aod) |
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80486DX2
Abstract: E0C88
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mf1272-01e0c88ice88ur80486dx2 | |
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Contextual Info: F-206 samTec .025so SHROUDED HEADER M ates with: NO. PINS PER ROW TSSH SSW, SSQ, SSM s I r ie s OTHER OPTION ROW OPTION PLATING OPTION Im p o rta n t N ote: This Series will only mate with SSW. SSQ & SSM Series x -A SPECIFICATIONS For complete specifications |
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f-206025so | |
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Contextual Info: MK—253—031 —335—220S METAL AirBorn M L -251 -0 3 1 —335—220S (PLASTIC) Board (Narrow Footprint) to Cable .050" 9 thru 100 Contacts Rugged Board Mount MK, ML MM—223—031—21 3-41 00 (METAL) Rugged Cable MN—221 -0 3 1 -2 1 3 - 4 1 0 0 (PLASTIC) |
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ctm032 | |
silico 1075Contextual Info: an A M P com pany Silicon Bipolar MMIC Cascadable Amplifier MA4TD0485, MA4TD0486 V3.00 Features • • • • • • Cascadable 50£2 Gain Block 3 dB Bandwidth: DC to 2.5 GHz 8.5 dB Typical Gain @ 1 .0 GHz Unconditionally Stable k > l Low Cost Plastic Package |
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ma4td0485ma4td0486silico 1075 | |
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Contextual Info: MITSUBISHI MEMORY CARD DYNAMIC RAM CARDS 1x2Mx32bit D R A M Card 2x2Mx32bit D R A M Card MF18M1-J57ATXX MF116M- J 5 7 A T X X Connector Type T w o-piece 88-p in / 7 DESCRIPTION These DRAM CARDs a re developed based on J E I D A D R A M C A R D G U I D E L I N E V e r . 2.1. |
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1x2mx32bit2x2mx32bitmf18m1-j57atxxmf116m-+2 | |
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Contextual Info: an A M P com pany Silicon Bipolar MMIC Cascadable Amplifier MA4TD0910 V2.00 Features • • • • • • Gold-Ceramic Microstrip Package Outline1: Cascadable 50£2 Gain Block 3dB Bandwidth: DC to 5.0 GHz 7.5 dB Typical Gain @ 1 . 0 GHz Input & Output SWR: <1.9 from 0.1 to 3-0 GHz |
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ma4td0910indu215 | |
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Contextual Info: Finisar Productt Specificaation Multiprotoccol 80Km m, 10Gb/ss DWDM M XFP Op ptical Trransceiver FTLX X3815M33xx PRODU UCT FEATU URES • Gb/s to 11.35 5Gb/s Supports 8.5G • Hot-pluggabl H le XFP footp print • RoHS-6 R Com mpliant lead-free • 100GHz ITU Grid, C-Ban |
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10gb/sx3815m3100ghzdw100s-2dx+1 | |
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Contextual Info: 3.3 V CMOS 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS AND BUS-HOLD IDT74ALVCH162244 DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) |
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16-bitidt74alvch162244250psmil-std-883+3 | |
MIL-PRF-83513
Abstract: HT028 HT33 NUM 1040
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ht-33mil-std-681mil-prf-83513ht028+2 | |
AM29818
Abstract: CY29FCT818CTPC CY29FCT818CTQC CY29FCT818T
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am29818fct818tcy29fct818ctpccy29fct818ctqc+1 | |
6299
Abstract: BXA10 CISPR22 EN61000-4-2 EN61000-4-5 N61000-4-3
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bxa10cispr22en55022ixa10+7 | |
L44AW
Abstract: L44PW L44N L44PDW L44R L4NF-C L44PCW-RA L44T L44PCW
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hl4rp-50db/100db/100m978ch+10 | |
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Contextual Info: PRELIMINARY CYPRESS SEMICONDUCTOR Functional Description • High speed T he CY7C1009 is a high-perform ance C M O S static R A M organized as 131,072 w ords by 8 bits. E asy m em ory expansion is provided by an active L O W chip enable C E i , an active H IG H chip e n ab le (C E 2), |
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cy7c1009 | |
SC409
Abstract: SC425 s3012 sc419 S3310 SC422 clock chips
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sc425sc409s3012sc419+3 | |