OV 724B Search Results

CD4724BM

Abstract: CD4724BMJ-MIL
Contextual Info: Na t i o n a l Semiconductor M IL IT A R Y DATA SHEET O r i g i n a l C r e a t i o n Date: Last U p d a t e Date: Last M a j o r R e v i s i o n Date: MNCD4 724B M —X R E V OAL 10/12/95 0 1 / 17/96 10/12/95 8-BIT ADDRESSABLE LATCH Industry Part Number NS Part Numbers

360-200

Abstract: CD4724BM CD4724BMJ-MIL
Contextual Info: Na t i o n a l Semiconductor M IL IT A R Y DATA SHEET O r i g i n a l C r e a t i o n Date: Last U p d a t e Date: Last M a j o r R e v i s i o n Date: MNCD4 724B M —X R E V OAL 10/12/95 0 1 / 17/96 10/12/95 8-BIT ADDRESSABLE LATCH Industry Part Number NS Part Numbers

Contextual Info: N ationa l Semiconductor M IL IT A R Y DATA SHEET Original Creation Date: 10/12/95 Last Update Date: 01/17/96 Last Major Revision Date: 10/12/95 MNCD4 724BM-X REV OAL 8-BIT ADDRESSABLE LATCH Industry Part Number NS Part Numbers CD4724BM CD4724BMJ-MIL Prime Die

32c46

Contextual Info: Technical Information PrimeSTACK 6PS0900R12KE4-DG-C27V Vorläufige Daten preliminary data Key data 3x 432A rms at 400V rms, forced air fan not implemented General information Stack for various inverter applications. IGBT's, heat sinks, capacitors, drivers and

Contextual Info: Technical Information 6PS12017E4FG35151 PrimeSTACK Vorläufige Daten preliminary data Key data 3x 591A rms at 690V rms, forced air fan not implemented General information Stack for various inverter applications. IGBTs, heat sink, capacitors, drivers and

Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2 !C"#3 A2 EC"#38   %  % B2*+36,4F36-6123428654F4

3567B

Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2 !C"#3 A2 EC"#38   %  % B2 *36+4F36,6123428654F4

b751 transistor

Abstract: 26-PIN ZIP20-P-400 b751
Contextual Info: O K I Semiconductor MSM5 14102B/BL 4,194,304-Word x 1-Bit DYNAMIC RAM : STATIC COLUMN MODE TYPE DESCRIPTION T he M SM 51 41 02 B/BL is a n e w generation d yn am ic R A M organized as 4,194,304-word x 1-bit. T he technology used to fabricate the M SM 5 1 4 1 0 2 B/BL is O K I's C M O S silico n gate process technology.

Contextual Info: O K I Semiconductor MSIVI514900/SI-_ 524,288-Word x 9-Bit D Y N A M IC RA M : FAST PAGE M O D E TYPE DESCRIPTION The MSM514900/SL is a new generation dynamic RAM organized as 524,288-word x 9-bit. The technology used to fabricate the MSM514900/ SL is OKI's CMOS silicon gate process technology.

ms1250

Abstract: SUNNY MSM6650 eprom 6653 ln 258 oki voice synthesizer msm6375 Sunny Oscillators MSM6653 MSM6656-XXX 10FFE
Contextual Info: O K I Semiconductor MSM6652-XXX/MSM6653-XXX/ MSM6654-XXX/MSM6655-XXX/ MSM6656-XXX_ Internal MASK ROM Speech Synthesis LSI G E N E R A L D E S C R IP T IO N The MSM6650 family is a successor to the MSM6375 family that are speech synthesis LSIs w ith

CT 1975 - sam

Abstract: CT 1975 sam MSM6373-329 MSM6374-007 TB 2929 Ho PM641
Contextual Info: O K I Semiconductor MSM6375/4/3/2-XXX 1 M-bit/512K-bit/256K-bit/128K-bit M ASK ROM S P E E C H SY N T H ESIZ ER G E N E R A L D ESCRIPTIO N The MSM6375 series is an ADPCM speech synthesis LSI utilizing a CMOS speech pro­ cessor circuit in conjunction with a built-in

MSM5116805A

Contextual Info: O K I Semiconductor MSM5 1 1 6 8 0 5 A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5116805A is a2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116805A achieves high integration, high-speed operation, and low-power

GDD7235

Abstract: ov 724b 0D07B
Contextual Info: LG Semicon. Co. LTD Description Features The GMM7402000ES/SG is a 2M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 20 pieces of lM x 4 bit DRAMs in 20/26 pin SOJ package on both side the p rin te d c irc u it board w ith d e co u p lin g

MSM7581

Abstract: PAD10 PAD31 NC-641 M7581
Contextual Info: O K I Semiconductor MSM7581_ ITU-T G.721 4ch ADPCM TRANSCODER G E N E R A L D ESC R IP T IO N The MSM7581 is an A D PC M tran sc o d er w h ich is u se d b y th e n ew dig ital cordless system . It converts 64 k b p s voice PCM serial d a ta to 32 k b p s ITU-T G.721 A D PC M serial d ata, a n d vice

TC5816AFT

Contextual Info: TOSHIBA TC 5816A D C 16Mbit 2M X 8 BIT CMOS NAND EEPROM PRELIMINARY Description The TC5816 is a 5 volt 16M bit NAND Electrically Erasable and Programma­ ble Read Only Memory (NAND EEPROM) with a spare 64k x 8 bits. This device is organized as 264 bytes x 16 pages x 512 blocks. The device has a

cd 4069 pin data

Abstract: 82C43 CI 4069 cjne MSM80C31F MSM80C31 MSM80C51F *82c43 80C31F
Contextual Info: O K I SEMICONDUCTOR GROUP IDE D | t.754S4D Q003b78 7 | C 5 1 1 C .1 I s e m i c o n c a y c t o r M S M 8 0 C 3 1 F /M S M 8 0 C 5 1 F -t - w - h - p i - n '- * - * ! CMOS SINGLE-COMPONENT 8 -BIT MICROCONTROLLER GENERAL DESCRIPTION The OKI M SM 80C31F/M SM 80C51F m icrocontroller is a low power, high performance 8-bit single

Analog Devices model 233J

Abstract: alfa uv API 45 AD0042C AC1007 analog devices TSDC1610 AD504 fetal monitor device circuit diagrams AD533J Helitrim AD 233J
Contextual Info: ANALOG DEVICES PRODUCT GUIDE Copyright 1975 by Analog Devices, Inc. FOREWORD This book is a guide to the broadest range of electronic compo­ nents and devices needed by designers of instrumentation and control systems which accept, analyze, process, convert, trans­

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

43a Hall Effect Magnetic Sensors

Abstract: X98824-ss IR sensor for line follower robot crankshaft position sensor Piezoelectric vortex flow meter X98834-SS SS19 hall "Proximity Sensor" suitable for line follower block diagram of dialysis machine micro switch keyboard
Contextual Info: HALL EFFECT SENSING AND APPLICATION MICRO SWITCH Sensing and Control 7DEOH RI &RQWHQWV Chapter 1 • Hall Effect Sensing Introduction . 1

GFB7400D

Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Contextual Info: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest