OSHI Search Results

T41G

Contextual Info: OSHIBA < LASER/FBR OPTIC 01 t • 10172S2 DOlbDIS 7 ■ TOSb O T-41-G7 OSHIBA LASER DIODE TOLD 370 Features • Wavelength 1,55/im • Simple Coaxial Package • Suitable for Local Subscriber Networks • Single-mode Fiber Pigtail 10/125/tm) • Hermetically Sealed

TC514170BJ-80

Abstract: tc514170 TC514170BJ80
Contextual Info: OSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynam ic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit techniques

Contextual Info: OSHIBA TC514800AJ/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJ/AZ/AFT is the new generation dynam ic RAM organized 524,288 word by 8 bit. The TC514800A J/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit

murata vco module

Abstract: LQP03TNR12J02 LQP03TNR10J02 digital tv tuner LQP03TN82NJ02 120NH
Contextual Info: September 13，2007 Company: Murata Manufacturing Co., Ltd. Exchange Listing: 6981 TSE1, OSE1 Location of head office: 1-10-1,Higashikotari, Nagaokakyo-shi, Kyoto President/ Statutory Representative Director: Tsuneo Murata Contact: Yukio Oshima, Corporate Communications Department

TC5116160

Abstract: A461
Contextual Info: T O S H IB A TC5116160AI/AFT-60/70/80 1,048,576 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC5116160AJ/AFT is the new generation dynam ic RAM organized 1,048,576 w ord by 16 bit. The TC5116160AJ/AFT utilizes T oshiba's CM OS silicon gate process technology as well as advanced circuit

TB62708N

Abstract: TB62708
Contextual Info: OSHIB A Bi-CMOS OSHIBA Constant Cur ace Dri ver Currrent Interf Interface Driv TB62708N 16 Bit Constant Current LED Source Driver with Shift Register and Latch Functions Product Description: The TB62708N is specifically designed for LED display applications. The Bi-CMOS device has

Contextual Info: OSHIBA TC51V4400ASJL/AFTL80 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC51V 4400ASJL/AFTL is the new generation dynam ic RAM organized 1,048,576 w ord by 4 bit. The TC51V 4400A SJL/AFTL utilizes T oshiba's CM OS silicon gate process technology as w ell as advanced

Contextual Info: OSHIB A Bi-CMOS OSHIBA Constant Cur ace Dri ver Currrent Interf Interface Driv TB62701AN 16 Bit Constant Current LED Driver with Shift Register and Latch Functions Product Description: The TB62701AN is specifically designed for LED display applications. The Bi-CMOS device has

ac dc led constant current driver

Contextual Info: OSHIB A Bi-CMOS OSHIBA Constant Cur ace Dri ver Currrent Interf Interface Driv TB62701AN 16 Bit Constant Current LED Driver with Shift Register and Latch Functions Product Description: The TB62701AN is specifically designed for LED display applications. The Bi-CMOS device has

TC88411F

Abstract: TC88411
Contextual Info: INTEGRATED OSHIBA CIRCUIT TECHNICAL DATA OSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory

TC5816

Abstract: TC5816AFT
Contextual Info: INTEGRATED 'OSHIBA CIRCUIT TECHNICAL DATA OSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5816 ARSILICON GATE CMOS 16 MBIT 2 M X 8 BITS CMOS NAND FLASH E2PROM DESCRIPTION The TC5816 device is a single 5-volt 16 Mbit NAND Electrically Erasable and Programmable Read Only

TSOP-54P

Contextual Info: INTEGRATED 'OSHIBA OSHIBA M O S DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC554161 FTI-85L TC554161 FTI-10L DATA SILICON GATE CM O S 262,144-WORD BY 16-BIT STATIC RAM DESCRIPTION I’he TC 554l6lFn is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16

SH400N25B

Abstract: SH400L25B SH400R25B 40115
Contextual Info: 9097250 T OSHI BA <DI S C R E T E / O P T O > 39C 0 2 3 0 8 D.T^aST-IS HIGH-SPEED THYRISTOR OSHIBA {D ISCR ET E/OPTO} 1300V 400A SH400R25B ]> F | T O ^ S a DOOSBOñ 2 U n it in mm M A X IM U M RATINGS RA TIN G SY M B O L C H A R A C T E R IS T IC SH400L25B

25FXF12

Abstract: toshiba 3000v 25FXF12 25QF11 STL 1550 25LF11 toshiba 3-12cia 40175 25NF11 AC32 TOSHIBA RECTIFIER
Contextual Info: 9097250 OSHIBA <DIS C R E T E / O P T O 1200V _ 3.9 P. T_- ~ ô^\ ~ n IL9. ° E CONTROLLED AVALANCHE RECTIFIER Ih DE I ^ G T T E S D DDOEEMT r OSHIBA {DISCRETE/OPT0} 25QF11 r _ Unit in BBt 25A M A XIM U M R A TIN G S C H A R A C T E R IS T IC SY M BO L

ESR500

Contextual Info: OSHINO LAMPS Lighted Products since 1931 Product ESR 50020 discrete diodes 5 mm color red product-catalog discrete diodes 5 mm color red part no ESR 50020 peak wavelength λp [nm] 660 Iv [mcd] @ 20 mA min 1200 Iv [mcd] @ 20 mA typ 2000 radiation angle 2 φ ½

Contextual Info: OSHINO LAMPS Lighted Products since 1931 Product SUA 30020 discrete diodes 3 mm color amber product-catalog discrete diodes 3 mm color amber part no SUA 30020 peak wavelength λp [nm] 605 Iv [mcd] @ 20 mA min 1500 Iv [mcd] @ 20 mA typ 2500 radiation angle 2 φ ½

Contextual Info: LCD M odule T e c h n ica l S p e c ific a tio n r ^Edition Sep 1 ,2 0 0 6 Final R evision T- Type No. 51756 D 121 J-FW -A-AEN * OPTREX CORPORATION Apprroved :S h jg e o S u z u k j QUALITY ASSURANCE DIVISION Checked : j oshiyuki O kam oto MOBILE,CONSUMER&INDUSTRY DESIGN DIV.

Contextual Info: OSHINO LAMPS Lighted Products since 1931 Product SUR 50010 discrete diodes 5 mm color red product-catalog discrete diodes 5 mm color red part no SUR 50010 peak wavelength λp [nm] 641 Iv [mcd] @ 20 mA min 4400 Iv [mcd] @ 20 mA typ 7400 radiation angle 2 φ ½

TA7805AP

Abstract: TA7812AP L7809CV L78M05ACS L78L05CD TA7815AP TA7809AP L78L33A L78L33 L4941BV
Contextual Info: VOLTAGE REGULATORS CROSS REFERENCE: OSHIBA VS ST Description 5V LOW DROP T j o C Io ut (A) Tol (%) -40 to 150 1.5 2 Package T OSHIBA TO-220 ST L4940V5 8.5V LOW DROP -40 to 150 1.5 2 TO-220 L4940V85 10V LOW DROP -40 to 150 1.5 2 TO-220 L4940V10 12V LOW DROP

rfid circuit diagram

Abstract: LXMS31 murata LXMS31 matching UHF RFID tag circuit diagram of RFID RFID tag UHF rfid antenna chip antenna rfid UHF antenna terminology murata 1010
Contextual Info: May，29th，2008 Company: Murata Manufacturing Co., Ltd. Exchange Listing: 6981 TSE1, OSE1 Location of head office: 1-10-1,Higashikotari, Nagaokakyo-shi, Kyoto President/ Statutory Representative Director: Tsuneo Murata Contact: Yukio Oshima, Corporate Communications Department

Contextual Info: OSHIBA TC514100ASJL/AFIL60/70/80 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION The TC514100A SJL/A FTL is the new generation dynam ic RA M organized 4,194,304 w ord by 1 bit. The TC514100A SJL/A FTL utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit

Contextual Info: 1,048,576 WORD X 4 BIT DYNAMIC RAM DESCRIPTION The TC514400ASJL/AFTL/ATRL is the new generation dynam ic RA M organized 1,048,576 word by 4 bit. The TC514400ASJL/AFTL/ATRL utilizes T oshiba’s CM OS silicon gate process technology as w ell as

EP-GW

Contextual Info: 54£ 5 OSHIBA UC/UP OSHIBA • OOlRb'ïb bT2 ■ T0S3 TM P47C662/862 UN D ERD EVELO PM EN T CM OS 4-BIT M ICRO CO N TRO LLER TMP47C662N, TMP47C862N The 47C662/862 have extend ed I/O ports, A/D co n verte r, p ro g ram m ab le pulse g e n e ra to r, and hig h

TB62706BN

Contextual Info: OSHIB A Bi-CMOS OSHIBA Constant Cur ace Dri ver Currrent Interf Interface Driv TB62706BN/BF TB62706BN 16 Bit Constant Current LED Driver with Shift Register and Latch Functions Product Description: The TB62706BN/BF is specifically designed for LED display applications. The Bi-CMOS device has