ORIGIN SCHOTTKY Search Results

Contextual Info: STPS40100HR Aerospace 2 x 20 A - 100 V Schottky rectifier Datasheet - production data Features • Forward current: 2 x 20 A • Repetitive peak voltage: 100 V • Low forward voltage drop: 0.9 V • Maximum junction temperature: 175 °C • Negligible switching losses

F1N4

Abstract: F1H6 F1N2 F1P2 F1H4 F1H2
Contextual Info: S U R F A C E MOUNTING D E V IC E S a PK»PP g fM "J 1. V ario u s kinds. R ectifying diodes, schottky b arrier diodes, surge clam p ers, etc. 2. Sm all size. 3. T a p in g c ap a b le o f high density m ounting. W 'S l '. KICfflo A PPLICATIONS ¥ iiJ m m ? )!

Contextual Info: STPS6045HR Aerospace 2 x 30 A - 45 V Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. Housed in a hermetically sealed surface mount package, it is

1N5822U

Contextual Info: 1N5822U Aerospace 40 V power Schottky rectifier Datasheet - production data Description This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B

Contextual Info: 1N5819U Aerospace 45 V power Schottky rectifier Datasheet - production data Description K A This power Schottky rectifier is designed and packaged to comply with the ESCC5000 specification for aerospace products. It is housed in a surface mount hermetically sealed LCC2B

STMicroelectronics smd marking code

Abstract: st smd diode marking code
Contextual Info: STPS20100HR Aerospace 1 x 20 and 2 x 20 A - 100 V Schottky rectifier Datasheet - production data • High reverse avalanche surge capability • Hermetic packages • Target radiation qualification: – 150 krad Si low dose rate – 1 Mrad high dose rate

F1N4

Abstract: zd tn
Contextual Info: S U R F A C E M O U N TIN G D E V IC E S n pp y •<71- — >' Kv 2 . 'MSBSJfc ♦ 3 1 S T % • I . 'W =1 -> a >y-— FEATUR ES 1. V ario u s kinds. R ectifying diodes, schottky b arrier diodes, surge clam p ers, etc.) 2. Sm all size. 3. T ap in g cap a b le o f high density m ounting.

Contextual Info: PRELIMINARY Gallium Arsenide Planar Doped Barrier PDB Zero Bias Detector Diodes (0.5 to 60GHz) * Features • ■ ■ ■ ■ ■ ■ High RF Pulsed Burnout High ESD Threshold Low “ M f ” Noise Excellent Temperature Stability, Better than Silicon Schottky ZBD’s

FS1J3

Abstract: origin diode Schottky Diode 30V 1A SOD123 toshiba battery charger Power DIODES, toshiba Nihon EP10QY03 d1651 B130LAW toshiba smd diode toshiba diode 1A
Contextual Info: New Product Announcement August 2002 Compact, High-efficiency SOD-123: B130LAW! Uses 35-40% Less Board Space Than Other 1 Amp SMD’s E D SOD-123 A B G H C J Dim Min Max A 3.55 3.85 B 2.55 2.85 C 1.40 1.70 D  1.35 E 0.55 Typical G  0.25 H 0.15 Typical

YA878C15

Contextual Info: http://www.fujisemi.com YA878C15R 150V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA878C15 YA878C15

diode 100v 10a

Contextual Info: http://www.fujisemi.com YG872C10R 100V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F Applications

Contextual Info: http://www.fujisemi.com YA872C15R 150V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA872C15 YA872C15

YA872C10R

Abstract: diode 100v 10a
Contextual Info: http://www.fujisemi.com YA872C10R 100V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA872C10 YA872C10

Catalog diode

Abstract: YG875C10
Contextual Info: http://www.fujisemi.com YG875C10R 100V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG875C10 YG875C10

Contextual Info: http://www.fujisemi.com YA878C12R 120V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA878C12 YA878C12

Contextual Info: http://www.fujisemi.com YA872C12R 120V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA872C12 YA872C12

YA872C20R

Abstract: YA872C20 fuji
Contextual Info: http://www.fujisemi.com YA872C20R 200V, 10A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA872C20 YA872C20

ORIGIN ELECTRIC CATALOG

Abstract: YA878C20R Catalog diode diode Catalog diode 200v 30a PUT catalog 200v 30A schottky fuji electric mark
Contextual Info: http://www.fujisemi.com YA878C20R 200V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA878C20 YA878C20

YG875C15R

Contextual Info: http://www.fujisemi.com YG875C15R 150V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG875C15 YG875C15

Contextual Info: http://www.fujisemi.com YA875C15R 150V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA875C15 YA875C15

Contextual Info: http://www.fujisemi.com YG878C12R 120V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG878C12 YG878C12

Catalog diode

Contextual Info: http://www.fujisemi.com YA875C20R 200V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA875C20 YA875C20

YG875C20R

Abstract: YG875C20
Contextual Info: http://www.fujisemi.com YG875C20R 200V, 20A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220F YG875C20 YG875C20

fuji

Contextual Info: http://www.fujisemi.com YA878C10R 100V, 30A FUJI Diode Ultra Low IR Schottky Barrier Diode Features • Ultra Low IR • Low VF • Tj MAX = 175˚C • High reliability at higher temperatures Outline Drawings [mm] Connection diagram TO-220AB YA878C10 YA878C10