OQ 012 Search Results

EM32100

Abstract: c945 SPECIFICATION C945 SEG22 SEG23
Contextual Info: EM32100 EM32100 ULNM=ULNM= !"#$% !"#$% bjPONMM `jlp !"i`a !"#$%&' *+,-.!/-.01"23014 i`a bjPONMM !""#$%&"'()*+, • ULNM i`a • !!"# • NO !OQ ! "Eoq`FI • !"#$%&'I !"RV RV • !W NKRsE F • !WPì^E F • i`a !WNLP INLO • !"!# $I i`a • !"#$% • POTSUeò

Contextual Info: samiBc F -198-1 + .S %*u3*-0 >J- HW-14-G8-S-S-400-100 M ate si ’’-':h . SSV\:. .:.-oQ. bSW. ESQ, Cl H ',E,: bLW. BSW, RCS 1,1 IDSS, IDSD NO. PINS PER ROW B LEAD STYLE Features: * Highly versatile board stacking interconnect * Choice of standard or custom tail lengths

ATC93LC46

Abstract: 0P-100P N351SX R508A T4 l060 db3 c836 GP1006 C5760 ZAP15 SiS645DX
Contextual Info: o N351SX 02 03 04 05 06 07 08 09 10 11 12 13 14 15 16 17 18 19 20 21 22 Oq 24 25 26 27 N351SX REV : 01 COVER PAGE GPIO DEFINITION & POWER CONSUMPTION BLOCK DIAGRAM C P U 1 HOST CPU2(POWER) CLOCK GENERATOR & DDR BUFFER SIS645DX(HOST & AGP/VB) SIS645DX(MEMORY FOR DDR & HYPERZIP)

Contextual Info: HN senes CABLE U G. T Y P E C O D E No. REF. GROUP OQ, >* _l CQ 5 ui /} W < LU Q o u (0 < 5 O H X o uj S T R A IG H T PLU GS 1 1 /fla ts R 176 006 Cable clamp shouldered centre contact R 176 012 Cable clamp shouldered centre contact R 1 7 6 0 1 2 150

Contextual Info: MOTOROLA SC XSTRS/R F m E D I OQöTbMS b3b?aSM 3 I MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA BUZ80A P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-Mode Silicon Gate This T M O S Power FET is designed for high voltage, high speed, low loss power switching applications, such

600Y

Abstract: 9777
Contextual Info: J. Target Specification of 1 M B 1 2 0 0 S A - 12 0 1. Outline Drawing Unit : mm v a I » 1 2 o oQ-o e à 3 * 1 £ eQ •ïf S3 O -o . £« *-> ? ïj) r »O -C 03 2 r C IO •|1 e2 £ 5 « 5. |^.ç : -cC -I "0> O -3s 'w u 2ro £u *■ *_£ S Sf ° 4> X £

600Y

Contextual Info: J. Target Specification of 1 M B 1 2 0 0 S A - 12 0 1. Outline Drawing Unit : mm v a I » 1 2 o oQ-o e à 3 * 1 £ eQ •ïf S3 O -o . £« *-> ? ïj) r »O -C 03 2 r C IO •|1 e2 £ 5 « 5. |^.ç : -cC -I "0> O -3s 'w u 2ro £u *■ *_£ S Sf ° 4> X £

Contextual Info: SKM 150GB173D Absolute Maximum Ratings Symbol Conditions IGBT ?IX& EI EI[$ ?¥X& U-^9 ,U<+16 ?'<./ SEMITRANSTM 3 IGBT Modules SKM 150GB173D Features # $%& ' *+ ,-./+012 3.(+4.//256 # 7 380(2/9 :.;.12(2.*< &' # =.> '(5*3+0(32 30<2 # ?24@ /.> +0'/ 3*442(+ >'+8 /.>

Contextual Info: SK 1 THYRISTOR BRIDGE,SCR,BRIDGE Axial Lead Diode 3$GH 3$$H IJ$HG L M ; N7,O87.7 &,*.% 6 ' 9):+8:.). )/%',+8):P 3 0222 0X22 0E22 3 0222 0X22 0E22 GV 0W02 GV 0W0X GV 0W0E 0122 0122 GV 0W01 Symbol Conditions IJ;3 (8:Q 0R2S B L 02 77S 4' L RY N022P TU IJGH 4&[ L XY TUS 02 7(

EM32116

Abstract: c945 w 53 EM32117 SEG23
Contextual Info: NS NS inary P r el i m EM32117 EM32117 !"#$%&' *+,# !"#$%&'()*+,# bjPONNT `jlp !"i`a !"#$%&'()*+,-.!/-.01"23014 i`a bjPONNT !""#$%&"'()*+,bjPONNT !"#$%&'() !"#$%&'()*+),-)./)01223"4 567bjPONNT !"# i`a !"#$%&'()*+,-.//0123!bjPONNT !"#$%&'()*+ !"#$%&'$&() *+,(-.$&()/0

Contextual Info: SKN 2,5 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode 3$>@ 3$$@ 3 A22 Y22 0O22 3 A22 Y22 0O22 >DE ONQ]2A >DE ONQ]2Y >DE ONQ]0O 0122 0122 >DE ONQ]01 SKN 2,5 Features # $%&%' % & *+,-%( ./ +) 0122 3 # 4%'5%+67 5%+,* 7,(% 86+9 -*,( # 6:(.*,+)' ;:)<% (6<% +9'%,<%< (+.< =>? @A

TPO610T

Abstract: OQ 012 DN189 LTC1514-5 MMBT3906LT1 ltc1515
Contextual Info: ! !"#$%&'L !"L !" !=189 Sam Nork !"#$%&' *+$, -./0 !"#iq`NRNR= !"#$%&'( !"#$%&'()*+,-iq`NRNQ !"#$%&'()*+,-./012 !"#$ %#&'()*+,-.'( !"#$%&'(L !"#$ !"# $%&'()*+,- .&' !"#$%&'()*=Rs= !"# !"#$%&'()(&*$+ ! =Ss !"#$%&'()*+!,-./ =PKSs !"#$%&'()*+,-=Rs= !"#$%&'()*+,-./L

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C64202L 64M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 4M-WORD BY 16-BIT WORD MODE / 2M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C64202L is a 67,108,864 bits synchronous mask-programmable ROM with multiplexed address bus.

tas t23

Abstract: QA1 power amplifier
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C64202L 64M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 4M-WORD BY 16-BIT WORD MODE / 2M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C64202L is a 67,108,864 bits synchronous mask-programmable ROM with multiplexed address bus.

MARKING CODE QA1

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32202L 32M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT WORD MODE / 1M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The µPD23C32202L is a 33,554,432 bits synchronous mask-programmable ROM with multiplexed address bus.

LT1895-46-0125

Contextual Info: 5TH FL,NO.542-5,CHUNG CHENG ROAD, HSIN-TIEN CITY,TAIWAN. LEDTECH ELECTRONICS CORP. TEL:886-2-222186891 FAX:886-2-22181222,22182894 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LT1895-46-0125 5.0mm ROUND PHOTOTRANSISTOR Approved by Checked by Prepared by

LT0395-46-0125

Abstract: LT039
Contextual Info: 5TH FL,NO.542-5,CHUNG CHENG ROAD, HSIN-TIEN CITY,TAIWAN. LEDTECH ELECTRONICS CORP. TEL:886-2-222186891 FAX:886-2-22181222,22182894 Http://www.ledtech.com.tw SPECIFICATION PART NO. : LT0395-46-0125 3.0mm ROUND PHOTOTRANSISTOR Approved by Checked by Prepared by

MARK T11 AD

Abstract: uPD23C64202L NEC 1246
Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT jtiPD23C64202L 64M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 4M-WORD BY 16-BIT WORD MODE / 2M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The ,uPD23C64202L is a 67,108,864 bits synchronous mask-programm able ROM

MC-454AC724

Abstract: MC-454AC724F-A10 MC-454AC724F-A67 MC-454AD644-A10 MC-454AD644-A12 MC-454AD644-A67 PD4516 PD4516821
Contextual Info: PRELIMINARY DATA SHEET_ NEC MOS INTEGRATED CIRCUIT MC-454AC724 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC724 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M

Contextual Info: DATA S H EE T_ MOS INTEGRATED CIRCUIT /¿PD23C32202L 32M-BIT SYNCHRONOUS MASK-PROGRAMMABLE ROM 2M-WORD BY 16-BIT WORD MODE / 1M-WORD BY 32-BIT (DOUBLE WORD MODE) Description The /j,PD23C32202L is a 33,554,432 bits synchronous mask-programm able ROM with multiplexed address bus.

MS1151

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-4516AD644 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516AD644 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 64 M SDRAM : /JPD4564821 are assembled.

essex 21-537

Abstract: essex pl3c essex 21-597 MIL-SID-100
Contextual Info: CABLES DASH ACCDMMDDATED NO -003 RG-174,-188,-315 -004 RG-179,-187 RG-195,-180 -OOB 421-111 ESSEX 8218 BELDEN -009 21-597 ESSEX -010 RG-122 RG-5B,-141,-303 -01 1 21-537 ESSEX RG-55,-142,-223 -012 RD-400 RG-59,-52 -013 8279 BELDEN -014 8212 BELDEN DATA CONTAINED IN THIS DOCUMENT IS

Contextual Info: !"#$% _~íjçÇ !" 123333333333333333333333333333333 _ !"# $%&' *+ N ~íjçÇ !" a`Ja` !"#$%&' !"#$%&'()*$+, !"-./ !" #$%&'()*+,-%&./0123 !"#$%&'()!*+,-./01234 !"#$%&'()*+,#-".*/"##01 !"#$ %&'() * + #* !"#$%&'( )*+,-./012345 !"#$%&'(!"$%)*'(!"$+%,) !"#$%&'#()*+, #-./01"#$

Contextual Info: PRELIMINARY DATA SH EET NEC MOS INTEGRATED CIRCUIT MC-4516AC724 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516AC724 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64 M S D R A M : «PD4564821 are assembled.