OPTOCOUPLER PC 125 Search Results

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75RLB120 FLAT-BASE TYPE INSULATED PACKAGE FEATURE PM75RLB120 a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

E80276

Abstract: PM150RLA120 optocoupler PC 187
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM25RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM25RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM75RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM50RLB120 FLAT-BASE TYPE INSULATED PACKAGE PM50RLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

optocoupler PC 187

Abstract: E80276 PM100RLA120 mitsubishi 7805 7805 wn
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM100RLA120 FLAT-BASE TYPE INSULATED PACKAGE PM100RLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM25RLB120 FLAT-BASE TYPE INSULATED PACKAGE PM25RLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM200RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM200RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM50RLB060 FLAT-BASE TYPE INSULATED PACKAGE PM50RLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM75RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75RLB060 FLAT-BASE TYPE INSULATED PACKAGE PM75RLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM150RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM50RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM50RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM25CLA120 FLAT-BASE TYPE INSULATED PACKAGE PM25CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM300RLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300RLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM75CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM300CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM300CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM50CLB120 FLAT-BASE TYPE INSULATED PACKAGE PM50CLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

MITSUBISHI INTELLIGENT POWER MODULES

Abstract: E80276 PM50CLA120 capacitor 0.1u optocoupler fast
Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM50CLA120 FLAT-BASE TYPE INSULATED PACKAGE PM50CLA120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM75CLB060 FLAT-BASE TYPE INSULATED PACKAGE PM75CLB060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM600CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM600CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.8V @Tj=125°C

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM25CLB120 FLAT-BASE TYPE INSULATED PACKAGE PM25CLB120 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.9V @Tj=125°C b) I adopt the over-temperature conservation by Tj detection of

Contextual Info: MITSUBISHI <INTELLIGENT POWER MODULES> PM150CLA060 FLAT-BASE TYPE INSULATED PACKAGE PM150CLA060 FEATURE a Adopting new 5th generation IGBT CSTBT) chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.5V @Tj=125°C