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    LB7678

    Abstract: opnext Hitachi DSA0045
    Contextual Info: Preliminary Technical Data Rev. 1.0, July, 2001 LB7678 op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 2.5 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated external modulator


    Original     		LB7678 14-pin LB7678 LB767 FOD-DS-00075 opnext Hitachi DSA0045 PDF

    300-pin opnext

    Abstract: LVDS MONITOR ir transmitter and receiver trv5020 opnext l TRV5020CN-S OpNext trv ir transmitter receiver OC192 TRV5020CN-xx
    Contextual Info: Technical Data Rev. 0.1, March 28, 2001 TRV5010/5020/5030CN-xx op next Powered by HITACHI OC-192 Transceiver with MUX/DMUX All specifications described herein are subject to change without prior notice TRV5010CN-xx: 1310 nm OC192 Transceiver for 2 km application (-/ I64.1)


    Original     		TRV5010/5020/5030CN-xx OC-192 TRV5010CN-xx: OC192 TRV5020CN-xx: TRV5030CN-xx: OC-192 300-pin 300-pin opnext LVDS MONITOR ir transmitter and receiver trv5020 opnext l TRV5020CN-S OpNext trv ir transmitter receiver TRV5020CN-xx PDF

    HE8404SG

    Contextual Info: HE8404SG ODE-208-049 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.


    Original     		HE8404SG ODE-208-049 HE8404SG HE8404SG: PDF

    HL6548FG

    Contextual Info: HL6548FG ODE-208-015D Z Rev.4 Aug. 29, 2006 Visible High Power Laser Diode Description The HL6548FG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for measurement, and various other types of optical equipment.


    Original     		HL6548FG ODE-208-015D HL6548FG PDF

    HE8812SG

    Contextual Info: HE8812SG ODE-208-052 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.


    Original     		HE8812SG ODE-208-052 HE8812SG HE8812: PDF

    HL6714G

    Abstract: ODE-208-044
    Contextual Info: HL6714G ODE-208-044 Z Rev.0 Oct. 17, 2006 AlGaInP Laser Diode Description The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser beam printers, levelers and various other types of optical equipment. Hermetic


    Original     		HL6714G ODE-208-044 HL6714G HL6714G: ODE-208-044 PDF

    HL6356MG

    Abstract: HL6357MG
    Contextual Info: HL6356MG/57MG ODE-208-008D Z Rev.4 May 30, 2006 Low Operating Current Visible Laser Diode Description The HL6356MG/57MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original     		HL6356MG/57MG ODE-208-008D HL6356MG/57MG HL6356MG/57MG: HL6356MG HL6357MG HL6356MG HL6357MG PDF

    HL6750MG

    Contextual Info: HL6750MG ODE-208-021A Z Rev.1 Dec. 21, 2006 Visible High Power Laser Diode Description The HL6750MG is a 0.68 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for various other types of optical equipment.


    Original     		HL6750MG ODE-208-021A HL6750MG HL6750MG: PDF

    HL6321G

    Abstract: HL6322G
    Contextual Info: HL6321G/22G ODE-208-028A Z Rev.1 Oct. 24, 2006 AlGaInP Laser Diodes Description The HL6321G/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.


    Original     		HL6321G/22G ODE-208-028A HL6321G/22G HL6321G/22G: HL6321G HL6322G HL6321G HL6322G PDF

    HL6358MG

    Abstract: HL6359MG
    Contextual Info: HL6358MG/59MG ODE-208-009E Z Rev.5 May 08, 2007 Low Operating Current Visible Laser Diode Description The HL6358MG/59MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original     		HL6358MG/59MG ODE-208-009E HL6358MG/59MG HL6358MG/59MG: HL6358MG HL6359MG HL6358MG HL6359MG PDF

    HL8343MG

    Abstract: p848
    Contextual Info: HL8343MG ODE-208-070A Z Rev.1 May 24, 2007 GaAlAs Laser Diode Description The HL8343MG is 0.85 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.


    Original     		HL8343MG ODE-208-070A HL8343MG HL8343MG: p848 PDF

    HL6376DG

    Contextual Info: HL6376DG ODE-208-064B Z Rev.2 Oct. 18, 2006 Low Operating Current Visible Laser Diode Description This HL6376DG is 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original     		HL6376DG ODE-208-064B HL6376DG HL6376DG: PDF

    HL6525MG

    Contextual Info: HL6525MG Visible High Power Laser Diode for Recordable-DVD ODE-208-1602G Z Rev.7 Mar. 2005 Description The HL6525MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as Recordable-DVD, and


    Original     		HL6525MG ODE-208-1602G HL6525MG 100ns, HL6525MG: PDF

    HL6512MG

    Contextual Info: HL6512MG ODE-208-042A Z Rev.1 Oct. 20, 2006 Visible High Power Laser Diode Description The HL6512MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. Its beam divergence (parallel to the junction) has a small variation to the optical output power. It is suitable as light sources for


    Original     		HL6512MG ODE-208-042A HL6512MG HL6512MG: 100ns, PDF

    HL8335MG

    Contextual Info: HL8335MG ODE-208-058B Z Rev.2 Jun. 13, 2006 GaAIAs Laser Diode Description The HL8335MG is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. It is suitable as a light source for various types of optical equipment. Features


    Original     		HL8335MG ODE-208-058B HL8335MG HL8335MG: PDF

    HL6554

    Abstract: HL6554MG
    Contextual Info: HL6554MG ODE-208-036C Z Rev.3 May 09, 2007 AlGaInP Laser Diodes Description The HL6554MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.


    Original     		HL6554MG ODE-208-036C HL6554MG HL6554: HL6554 PDF

    HL6316G

    Contextual Info: HL6316G ODE-208-026 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6316G is a 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as light sources for laser pointers and optical equipment. Features •


    Original     		HL6316G ODE-208-026 HL6316G HL6316G: PDF

    HL6327MG

    Abstract: HL6328MG
    Contextual Info: HL6327MG/28MG ODE-208-031 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6327MG/28MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original     		HL6327MG/28MG ODE-208-031 HL6327MG/28MG HL6327MG/28MG: HL6327MG HL6328MG HL6327MG HL6328MG PDF

    HL6364DG

    Abstract: HL6365DG 65DG
    Contextual Info: HL6364DG/65DG ODE-208-060B Z Rev.2 Oct. 17, 2006 Low Operating Current Visible Laser Diode Description The HL6364DG/65DG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original     		HL6364DG/65DG ODE-208-060B HL6364DG/65DG HL6364DG/65DG: HL6364DG HL6365DG HL6364DG HL6365DG 65DG PDF

    HL6320G

    Abstract: HL6319G
    Contextual Info: HL6319G/20G ODE-208-027 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6319G/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.


    Original     		HL6319G/20G ODE-208-027 HL6319G/20G HL6319G/20G: HL6319G HL6320G HL6320G HL6319G PDF

    opnext

    Abstract: HL8341MG
    Contextual Info: HL8341MG ODE-208-068A Z Rev.1 May 24, 2007 GaAlAs Laser Diode Description The HL8341MG is 0.85 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.


    Original     		HL8341MG ODE-208-068A HL8341MG HL8341MG: opnext PDF

    HL6362MG

    Abstract: HL6363MG
    Contextual Info: HL6362MG/63MG ODE-208-011E Z Rev.5 Apr. 14, 2006 Low Operating Current Visible Laser Diode Description The HL6362MG/63MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser display, laser scanners and optical equipment for measurement.


    Original     		HL6362MG/63MG ODE-208-011E HL6362MG/63MG HL6362MG/63MG: HL6362MG HL6363MG HL6362MG HL6363MG PDF

    HL6347MG

    Abstract: HL6348MG
    Contextual Info: HL6347MG/48MG ODE-208-019 Z Rev.0 Jul. 01, 2005 Circular Beam Low Operating Current Description The HL6347MG/48MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source


    Original     		HL6347MG/48MG ODE-208-019 HL6347MG/48MG HL6347MG HL6347MG/48MG: HL6347MG HL6348MG PDF

    HL6340MG

    Abstract: HL6341MG
    Contextual Info: HL6340MG/41MG ODE-208-035 Z Rev.0 Jul. 01, 2005 Circular Beam Low Operating Current Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source


    Original     		HL6340MG/41MG ODE-208-035 HL6340MG/41MG HL6340MG/41MG: HL6340MG HL6340MG HL6341MG PDF