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    I-64.1

    Abstract: TRV709 300-Pin trv5019 trv7058 OpNext 10gbase sr 300-pin opnext trv7068 GR-253 TRV5029EZ
    Contextual Info: Products Products 300-pin Transponder SerDes Transceiver Modules Opnext offers 300-pin Transponders for the following Data Rates / Applications ● ● ● 40 Gbit/s 10 Gbit/s IR/LR 10 Gbit/s SR 40 Gbit/s 40G Features ● ● ● ● ● ● ● Laser Class 1


    Original     		300-pin VSR2000-3R2) TRV7B10BN com/jp/products/details/300pin OC-768 STM-256 TRV5016xS I-64.1 TRV709 trv5019 trv7058 OpNext 10gbase sr 300-pin opnext trv7068 GR-253 TRV5029EZ PDF

    opnext

    Abstract: LE7602-SAC LE7602-S hitachi laser diode opnext l 7Pin Connector opnext laser diode Hitachi DSA0045 opnext ps
    Contextual Info: Technical Data Rev. 1.0, May 2001 LE7602-SAC op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 10 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated laser modulator (ILM)


    Original     		LE7602-SAC LE7602-SAC LE7602-SAC, FOD-DS-00076 opnext LE7602-S hitachi laser diode opnext l 7Pin Connector opnext laser diode Hitachi DSA0045 opnext ps PDF

    LB7678

    Abstract: opnext Hitachi DSA0045
    Contextual Info: Preliminary Technical Data Rev. 1.0, July, 2001 LB7678 op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 2.5 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated external modulator


    Original     		LB7678 14-pin LB7678 LB767 FOD-DS-00075 opnext Hitachi DSA0045 PDF

    opnext

    Abstract: LE5302-HS Hitachi DSA0045 opnext ps hitachi laser diode
    Contextual Info: Short Form Preliminary Technical Data Rev. 0.1 December, 2000 op next LE5302-HS Powered by HITACHI Laser Diode Module Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of the products that are under development and for which a reliability test has not been


    Original     		LE5302-HS FOD-DS-00072 opnext LE5302-HS Hitachi DSA0045 opnext ps hitachi laser diode PDF

    opnext

    Abstract: LB7677L Hitachi DSA0045 opnext ps Opnext t
    Contextual Info: Preliminary Technical Data Rev. 0.1, July 31, 2001 LB7677L op next Powered by HITACHI Laser Diode Module Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of the products that are under development and for which a reliability test has not been


    Original     		LB7677L FOD-DS-00077 opnext LB7677L Hitachi DSA0045 opnext ps Opnext t PDF

    HE8404SG

    Contextual Info: HE8404SG ODE-208-049 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.


    Original     		HE8404SG ODE-208-049 HE8404SG HE8404SG: PDF

    HL6556MG

    Contextual Info: HL6556MG ODE-208-041 Z Preliminary Rev.0 Feb. 06, 2007 AlGaInP Laser Diodes Description The HL6556MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.


    Original     		HL6556MG ODE-208-041 HL6556MG HL6556: PDF

    HL6557MG

    Contextual Info: HL6557MG ODE-208-053 Z Preliminary Rev.0 Feb. 22, 2007 AlGaInP Laser Diodes Description The HL6557MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.


    Original     		HL6557MG ODE-208-053 HL6557MG HL6557: PDF

    HL6548FG

    Contextual Info: HL6548FG ODE-208-015D Z Rev.4 Aug. 29, 2006 Visible High Power Laser Diode Description The HL6548FG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for measurement, and various other types of optical equipment.


    Original     		HL6548FG ODE-208-015D HL6548FG PDF

    HE8812SG

    Contextual Info: HE8812SG ODE-208-052 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.


    Original     		HE8812SG ODE-208-052 HE8812SG HE8812: PDF

    GaAs 850 nm Infrared Emitting Diode

    Abstract: HE8404SG opnext
    Contextual Info: HE8404SG GaAlAs Infrared Emitting Diode ODE-208-997B Z Rev.2 Mar. 2005 Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.


    Original     		HE8404SG ODE-208-997B HE8404SG HE8404SG: GaAs 850 nm Infrared Emitting Diode opnext PDF

    HL6714G

    Abstract: ODE-208-044
    Contextual Info: HL6714G ODE-208-044 Z Rev.0 Oct. 17, 2006 AlGaInP Laser Diode Description The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser beam printers, levelers and various other types of optical equipment. Hermetic


    Original     		HL6714G ODE-208-044 HL6714G HL6714G: ODE-208-044 PDF

    HL6356MG

    Abstract: HL6357MG
    Contextual Info: HL6356MG/57MG ODE-208-008D Z Rev.4 May 30, 2006 Low Operating Current Visible Laser Diode Description The HL6356MG/57MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original     		HL6356MG/57MG ODE-208-008D HL6356MG/57MG HL6356MG/57MG: HL6356MG HL6357MG HL6356MG HL6357MG PDF

    HL6750MG

    Contextual Info: HL6750MG ODE-208-021A Z Rev.1 Dec. 21, 2006 Visible High Power Laser Diode Description The HL6750MG is a 0.68 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for various other types of optical equipment.


    Original     		HL6750MG ODE-208-021A HL6750MG HL6750MG: PDF

    HL6358MG

    Abstract: HL6359MG
    Contextual Info: HL6358MG/59MG ODE-208-009E Z Rev.5 May 08, 2007 Low Operating Current Visible Laser Diode Description The HL6358MG/59MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original     		HL6358MG/59MG ODE-208-009E HL6358MG/59MG HL6358MG/59MG: HL6358MG HL6359MG HL6358MG HL6359MG PDF

    HL8343MG

    Abstract: p848
    Contextual Info: HL8343MG ODE-208-070A Z Rev.1 May 24, 2007 GaAlAs Laser Diode Description The HL8343MG is 0.85 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.


    Original     		HL8343MG ODE-208-070A HL8343MG HL8343MG: p848 PDF

    HL6376DG

    Contextual Info: HL6376DG ODE-208-064B Z Rev.2 Oct. 18, 2006 Low Operating Current Visible Laser Diode Description This HL6376DG is 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original     		HL6376DG ODE-208-064B HL6376DG HL6376DG: PDF

    HL6525MG

    Contextual Info: HL6525MG Visible High Power Laser Diode for Recordable-DVD ODE-208-1602G Z Rev.7 Mar. 2005 Description The HL6525MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories, such as Recordable-DVD, and


    Original     		HL6525MG ODE-208-1602G HL6525MG 100ns, HL6525MG: PDF

    HL6512MG

    Contextual Info: HL6512MG ODE-208-042A Z Rev.1 Oct. 20, 2006 Visible High Power Laser Diode Description The HL6512MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. Its beam divergence (parallel to the junction) has a small variation to the optical output power. It is suitable as light sources for


    Original     		HL6512MG ODE-208-042A HL6512MG HL6512MG: 100ns, PDF

    HL6714G

    Contextual Info: HL6714G AlGaInP Laser Diode ODE-208-192C Z Rev.3 Jan. 2003 Description The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser beam printers, levelers and various other types of optical


    Original     		HL6714G ODE-208-192C HL6714G HL6714G: PDF

    HL6555G

    Abstract: 664nm
    Contextual Info: HL6555G ODE-208-056B Z Rev.2 Oct. 12, 2006 Visible High Power Laser Diode for Measurement Description The HL6555G is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for various types of optical equipment.


    Original     		HL6555G ODE-208-056B HL6555G HL6555G: 664nm PDF

    HL6553FG

    Contextual Info: HL6553FG ODE-208-016C Z Rev.3 Aug. 29, 2006 Visible High Power Laser Diode Description The HL6553FG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for measurement, and various other types of optical equipment.


    Original     		HL6553FG ODE-208-016C HL6553FG PDF

    HL6378DG

    Contextual Info: HL6378DG ODE-208-022A Z Rev.1 Dec. 21, 2006 Low Operating Current Visible High Power Laser Diode Description This HL6378DG is 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser display, laser module and optical equipment for measurement.


    Original     		HL6378DG ODE-208-022A HL6378DG HL6378DG: PDF

    HL8335MG

    Contextual Info: HL8335MG ODE-208-058B Z Rev.2 Jun. 13, 2006 GaAIAs Laser Diode Description The HL8335MG is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. It is suitable as a light source for various types of optical equipment. Features


    Original     		HL8335MG ODE-208-058B HL8335MG HL8335MG: PDF