OPNEXT L Search Results

laser diode 940 nM 200mW

Abstract: LD5033 80km* opnext ps7055 LE7062 laser DFB chip 1310nm 2.5G LB7962 10G APD chip HL6530MG Photodiode, 1550nm, butterfly package
Contextual Info: opnext 2005 / 2006 HITACHI OPTODEVICES Powered by opnext Powered by HITACHI Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, Opnext offers unique leading-edge optodevices in such areas as fiber optic communications, optical storage, and measuring instruments and encoders. Constant refinement of established technologies offer cutting-edge solutions to a wide variety of needs, providing the power to reshape our world and

opnext

Abstract: laser diode DVD 100mw opnext laser diode 660nm 100mw HL6348MG HL1357CP HL1511AF HL1513AF HL6314MG 1310nm fp 10g
Contextual Info: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring

opnext

Abstract: HL1359CP laser diode bare chip 1550 DFB laser bare die HL1357CP HL1511AF HL1513AF laser diode for optical communication Laser Diode 1550 nm dBm dfb 10g
Contextual Info: Opnext leads the way in the growing field of optics, with a combination of experience and vision. In this new era of light, with a focus on quality optical technologies, Opnext offers unique leading edge optodevices in such areas as fiber-optic communications, optical storage, and measuring

LD5033

Abstract: opnext HL6366DG opnext l HL8340MG A 785nm HL6545MG 660nm 100mw HL8341MG HL6313G
Contextual Info: Optodevices Opnext Lights It Up Opnext is paving the way to a future of exciting laser developments and ground breaking applications. Our industry heritage, future-focused thinking and deep commitment to research and development help us anticipate and meet

TR6143

Abstract: advantest TR6143 opnext laser diode HP6655A apc driver for laser diode DESIGN AC VOLTMETER USING TWO DIODE Tektronix TDS 460A manual LDC-3722B infrared laser diode AM503
Contextual Info: ODE-608-001B Z Opnext Laser Diodes Surge Damage Prevention Manual Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility

OpNext trs5020en

Abstract: TRS7050EN opnext SFP opnext 10GBASE-SR
Contextual Info: Opnext SFP+ Portfolio Opnext is proud to present our broad portfolio of SFP+ products. Our product line up covers Ultra Short Reach, Short Reach, Long Reach, and Extended Reach for our 10GbE products as well as Short Wave and Long Wave for our 8G products. With low power consumption, a wide temperature range, and robust EMI

OpNext SFP

Abstract: OpNext STM16
Contextual Info: Technical Data for SFP Transceiver Series Rev. 1.5/June 5th, 2003 SFP Transceiver Series (TRFxxxx) Opnext, Inc. opnext Powered by HITACHI Overview of Products FEATURES • • • • • • • • • • • • • Wide Range of Applications: SDH, SONET, ATM, 155Mbit/s to 2.5Gbit/s,

I-64.1

Abstract: TRV709 300-Pin trv5019 trv7058 OpNext 10gbase sr 300-pin opnext trv7068 GR-253 TRV5029EZ
Contextual Info: Products Products 300-pin Transponder SerDes Transceiver Modules Opnext offers 300-pin Transponders for the following Data Rates / Applications ● ● ● 40 Gbit/s 10 Gbit/s IR/LR 10 Gbit/s SR 40 Gbit/s 40G Features ● ● ● ● ● ● ● Laser Class 1

TRF opnext

Abstract: 80km* opnext opnext SFP opnext TRF opnext SFP TRF OpNext 1000Base Lx TRF-59 TRF776x opnext l OpNext
Contextual Info: Technical Data for SFP Transceiver Series Rev. 1.5.1/June 20th, 2003 Opnext, Inc. SFP Transceiver Series (TRFxxxx) Overview of Products FEATURES • • • • • • • • • • • • • Wide Range of Applications: SDH, SONET, ATM, 155Mbit/s to 2.5Gbit/s,

EZ 644

Abstract: 300-pin opnext OpNext 10gbase sr opnext l I64.1/10GBASE 2p 2.54 A0304 I-64.1 trv501 GR-253-CORE
Contextual Info: Technical Data Rev. 0.2, Sep. 5, 2005 TRV5026EZ-xx-x 10Gbit/s Transceiver with MUX/DMUX All specifications described herein are subject to change without prior notice TRV5026EZ-xx-x: 1310 nm OC192 for 7km / 2km application (SONET SR-1[1]/ SDH I64.1[2]) & 10GbE for 10km application (10GBASE-L[3]) Dual Protocol Transceiver

opnext l

Abstract: LE7602-LAC LE7602-LA350C LE7602-LA180C Hitachi DSA0045
Contextual Info: Technical Data Rev. 1.1, May 2002 LE7602-LAC, LE7602-LAxxxC op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 10 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated laser modulator (ILM)

opnext

Abstract: LE7602-SAC LE7602-S hitachi laser diode opnext l 7Pin Connector opnext laser diode Hitachi DSA0045 opnext ps
Contextual Info: Technical Data Rev. 1.0, May 2001 LE7602-SAC op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 10 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated laser modulator (ILM)

LB7678

Abstract: opnext Hitachi DSA0045
Contextual Info: Preliminary Technical Data Rev. 1.0, July, 2001 LB7678 op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 2.5 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated external modulator

opnext

Abstract: LE5302-HS Hitachi DSA0045 opnext ps hitachi laser diode
Contextual Info: Short Form Preliminary Technical Data Rev. 0.1 December, 2000 op next LE5302-HS Powered by HITACHI Laser Diode Module Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of the products that are under development and for which a reliability test has not been

hl6360mg

Abstract: HL6361MG
Contextual Info: HL6360MG/61MG Low Operating Current Visible Laser Diode ODE-208-010 Z Target specification Rev.0 Apr. 2005 Description The HL6360MG/61MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for

009C

Abstract: HL6358MG HL6359MG
Contextual Info: HL6358MG/59MG ODE-208-009C Z Low Operating Current Visible Laser Diode Preliminary Rev.3 Jun. 09, 2006 Description The HL6358MG/59MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

HL6554MG

Contextual Info: HL6554MG ODE-208-036 Z Preliminary Rev.0 Jul. 13, 2005 AlGaInP Laser Diodes Description The HL6554MG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.

Contextual Info: HL6395MG/96MG High Temperature Low Operating Current Visible Laser Diode ODE2066-01 T Target Specification Rev.1 Nov. 17, 2008 Description The HL6395MG/96MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.

HE8811

Contextual Info: HE8811 ODE-208-051 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam

HE7601SG

Contextual Info: HE7601SG ODE-208-023 Z Rev.0 Oct. 27, 2006 GaAlAs Infrared Emitting Diode Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors.

HE8404SG

Abstract: 38485
Contextual Info: HE8404SG GaAlAs Infrared Emitting Diode ODE-208-997A Z Rev.1 Jan. 2003 Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.

Contextual Info: HL63101MG/102MG ODE2065-01 T Target Specification Rev.1 Apr. 17, 2009 Low Operating Current Visible Laser Diode Description The HL63101MG/102MG are 0.63 m band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

Contextual Info: HL6376DG ODE-208-064B Z Rev.2 Oct. 18, 2006 Low Operating Current Visible Laser Diode Description This HL6376DG is 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

HL6555G

Contextual Info: HL6555G ODE-208-056B Z Rev.2 Oct. 12, 2006 Visible High Power Laser Diode for Measurement Description The HL6555G is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for various types of optical equipment.