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    LB7678

    Abstract: opnext Hitachi DSA0045
    Contextual Info: Preliminary Technical Data Rev. 1.0, July, 2001 LB7678 op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 2.5 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated external modulator


    Original     		LB7678 14-pin LB7678 LB767 FOD-DS-00075 opnext Hitachi DSA0045 PDF

    HE8812SG

    Contextual Info: HE8812SG ODE-208-052 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.


    Original     		HE8812SG ODE-208-052 HE8812SG HE8812: PDF

    HL6376DG

    Contextual Info: HL6376DG ODE-208-064B Z Rev.2 Oct. 18, 2006 Low Operating Current Visible Laser Diode Description This HL6376DG is 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original     		HL6376DG ODE-208-064B HL6376DG HL6376DG: PDF

    HL8335MG

    Contextual Info: HL8335MG ODE-208-058B Z Rev.2 Jun. 13, 2006 GaAIAs Laser Diode Description The HL8335MG is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. It is suitable as a light source for various types of optical equipment. Features


    Original     		HL8335MG ODE-208-058B HL8335MG HL8335MG: PDF

    HL6554

    Abstract: HL6554MG
    Contextual Info: HL6554MG ODE-208-036C Z Rev.3 May 09, 2007 AlGaInP Laser Diodes Description The HL6554MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.


    Original     		HL6554MG ODE-208-036C HL6554MG HL6554: HL6554 PDF

    HL6316G

    Contextual Info: HL6316G ODE-208-026 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6316G is a 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. It is suitable as light sources for laser pointers and optical equipment. Features •


    Original     		HL6316G ODE-208-026 HL6316G HL6316G: PDF

    HL6327MG

    Abstract: HL6328MG
    Contextual Info: HL6327MG/28MG ODE-208-031 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6327MG/28MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original     		HL6327MG/28MG ODE-208-031 HL6327MG/28MG HL6327MG/28MG: HL6327MG HL6328MG HL6327MG HL6328MG PDF

    HL6364DG

    Abstract: HL6365DG 65DG
    Contextual Info: HL6364DG/65DG ODE-208-060B Z Rev.2 Oct. 17, 2006 Low Operating Current Visible Laser Diode Description The HL6364DG/65DG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.


    Original     		HL6364DG/65DG ODE-208-060B HL6364DG/65DG HL6364DG/65DG: HL6364DG HL6365DG HL6364DG HL6365DG 65DG PDF

    HL6320G

    Abstract: HL6319G
    Contextual Info: HL6319G/20G ODE-208-027 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6319G/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers and optical equipment for measurement.


    Original     		HL6319G/20G ODE-208-027 HL6319G/20G HL6319G/20G: HL6319G HL6320G HL6320G HL6319G PDF

    opnext

    Abstract: HL8341MG
    Contextual Info: HL8341MG ODE-208-068A Z Rev.1 May 24, 2007 GaAlAs Laser Diode Description The HL8341MG is 0.85 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.


    Original     		HL8341MG ODE-208-068A HL8341MG HL8341MG: opnext PDF

    HL6362MG

    Abstract: HL6363MG
    Contextual Info: HL6362MG/63MG ODE-208-011E Z Rev.5 Apr. 14, 2006 Low Operating Current Visible Laser Diode Description The HL6362MG/63MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser display, laser scanners and optical equipment for measurement.


    Original     		HL6362MG/63MG ODE-208-011E HL6362MG/63MG HL6362MG/63MG: HL6362MG HL6363MG HL6362MG HL6363MG PDF

    HL6340MG

    Abstract: HL6341MG
    Contextual Info: HL6340MG/41MG ODE-208-035 Z Rev.0 Jul. 01, 2005 Circular Beam Low Operating Current Description The HL6340MG/41MG are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are suitable as a light source


    Original     		HL6340MG/41MG ODE-208-035 HL6340MG/41MG HL6340MG/41MG: HL6340MG HL6340MG HL6341MG PDF

    300-pin opnext

    Abstract: LVDS MONITOR ir transmitter and receiver trv5020 opnext l TRV5020CN-S OpNext trv ir transmitter receiver OC192 TRV5020CN-xx
    Contextual Info: Technical Data Rev. 0.1, March 28, 2001 TRV5010/5020/5030CN-xx op next Powered by HITACHI OC-192 Transceiver with MUX/DMUX All specifications described herein are subject to change without prior notice TRV5010CN-xx: 1310 nm OC192 Transceiver for 2 km application (-/ I64.1)


    Original     		TRV5010/5020/5030CN-xx OC-192 TRV5010CN-xx: OC192 TRV5020CN-xx: TRV5030CN-xx: OC-192 300-pin 300-pin opnext LVDS MONITOR ir transmitter and receiver trv5020 opnext l TRV5020CN-S OpNext trv ir transmitter receiver TRV5020CN-xx PDF