OPNEXT L Search Results

I-64.1

Abstract: TRV709 300-Pin trv5019 trv7058 OpNext 10gbase sr 300-pin opnext trv7068 GR-253 TRV5029EZ
Contextual Info: Products Products 300-pin Transponder SerDes Transceiver Modules Opnext offers 300-pin Transponders for the following Data Rates / Applications ● ● ● 40 Gbit/s 10 Gbit/s IR/LR 10 Gbit/s SR 40 Gbit/s 40G Features ● ● ● ● ● ● ● Laser Class 1

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Abstract: LE7602-LAC LE7602-LA350C LE7602-LA180C Hitachi DSA0045
Contextual Info: Technical Data Rev. 1.1, May 2002 LE7602-LAC, LE7602-LAxxxC op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 10 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated laser modulator (ILM)

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Abstract: LE7602-SAC LE7602-S hitachi laser diode opnext l 7Pin Connector opnext laser diode Hitachi DSA0045 opnext ps
Contextual Info: Technical Data Rev. 1.0, May 2001 LE7602-SAC op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 10 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated laser modulator (ILM)

LB7678

Abstract: opnext Hitachi DSA0045
Contextual Info: Preliminary Technical Data Rev. 1.0, July, 2001 LB7678 op next Powered by HITACHI Laser Diode Module All specifications described herein are subject to change without notice. FEATURES • 2.5 Gbit/s operation at 1.55 µm wavelength · Monolithically integrated external modulator

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Abstract: LE5302-HS Hitachi DSA0045 opnext ps hitachi laser diode
Contextual Info: Short Form Preliminary Technical Data Rev. 0.1 December, 2000 op next LE5302-HS Powered by HITACHI Laser Diode Module Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of the products that are under development and for which a reliability test has not been

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Abstract: LB7677L Hitachi DSA0045 opnext ps Opnext t
Contextual Info: Preliminary Technical Data Rev. 0.1, July 31, 2001 LB7677L op next Powered by HITACHI Laser Diode Module Preliminary Product Disclaimer This preliminary data sheet is provided to assist you in the evaluation of functional samples of the products that are under development and for which a reliability test has not been

HE8811

Contextual Info: HE8811 ODE-208-051 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam

Contextual Info: HL6376DG ODE-208-064B Z Rev.2 Oct. 18, 2006 Low Operating Current Visible Laser Diode Description This HL6376DG is 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

HE8404SG

Contextual Info: HE8404SG ODE-208-049 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.

Contextual Info: HL6364DG/65DG ODE-208-060B Z Rev.2 Oct. 17, 2006 Low Operating Current Visible Laser Diode Description The HL6364DG/65DG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

HL6325G

Abstract: HL6326G
Contextual Info: HL6325G/26G ODE-208-030 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6325G/26G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

HL6314MG

Abstract: HL6324MG
Contextual Info: HL6314MG/24MG ODE-208-025 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6314MG/24MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser pointers and optical equipment for amusement.

HL6738MG

Contextual Info: HL6738MG ODE-208-047 Z Rev.0 Sept. 25, 2006 Visible High Power Laser Diode Description The HL6738MG is a 0.68 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for various other types of optical equipment.

HL8342MG

Abstract: 852nm
Contextual Info: HL8342MG ODE-208-069A Z Rev.1 May 24, 2007 GaAlAs Laser Diode Description The HL8342MG is 0.85 µm band GaAlAs laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for sensor applications and various other types of optical equipment.

208017

Abstract: ODE-208-017 HL6312G HL6313G
Contextual Info: HL6312G/13G ODE-208-017 Z Rev.0 Jul. 01, 2005 AlGaInP Laser Diodes Description The HL6312G/13G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. They are suitable as light sources in bar code readers, laser levelers and various other types

HE8807FL

Abstract: HE8807SG Semiconductor Nuclear Radiation Detector
Contextual Info: HE8807SG/FL ODE-208-050 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diodes Description The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength of 880 nm. Features • • • • • Package Type • HE8807SG: SG1

HL6556MG

Contextual Info: HL6556MG ODE-208-041 Z Preliminary Rev.0 Feb. 06, 2007 AlGaInP Laser Diodes Description The HL6556MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.

HL6557MG

Contextual Info: HL6557MG ODE-208-053 Z Preliminary Rev.0 Feb. 22, 2007 AlGaInP Laser Diodes Description The HL6557MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as light sources in bar code readers, laser levelers and various other types of optical equipment.

HL6548FG

Contextual Info: HL6548FG ODE-208-015D Z Rev.4 Aug. 29, 2006 Visible High Power Laser Diode Description The HL6548FG is a 0.65 µm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for measurement, and various other types of optical equipment.

HE8812SG

Contextual Info: HE8812SG ODE-208-052 Z Rev.0 Oct. 30, 2006 GaAlAs Infrared Emitting Diode Description The HE8812SG is a GaAlAs double heterojunction structure 870 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.

GaAs 850 nm Infrared Emitting Diode

Abstract: HE8404SG opnext
Contextual Info: HE8404SG GaAlAs Infrared Emitting Diode ODE-208-997B Z Rev.2 Mar. 2005 Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment.

HL6714G

Abstract: ODE-208-044
Contextual Info: HL6714G ODE-208-044 Z Rev.0 Oct. 17, 2006 AlGaInP Laser Diode Description The HL6714G is a 0.67 µm band AlGaInP index-guided laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for laser beam printers, levelers and various other types of optical equipment. Hermetic

HL6356MG

Abstract: HL6357MG
Contextual Info: HL6356MG/57MG ODE-208-008D Z Rev.4 May 30, 2006 Low Operating Current Visible Laser Diode Description The HL6356MG/57MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.

HL6750MG

Contextual Info: HL6750MG ODE-208-021A Z Rev.1 Dec. 21, 2006 Visible High Power Laser Diode Description The HL6750MG is a 0.68 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for various other types of optical equipment.