OPERATION13 Search Results
OPERATION13 Datasheets Context Search
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Contextual Info: Doc No. TA4-EA-06144 Revision. 3 Product Standards AN33017UA VIN = 5 to 39 V, 1-channel DC-DC Step down Regulator integrated N-channel Power MOSFET FEATURES Current Feedback Function compensates output voltage drop due to external USB cable loss Internal reference voltage is within 1% accuracy. |
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TA4-EA-06144 AN33017UA | |
IDT709269
Abstract: IDT709279 014L 100-PIN
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OCR Scan |
CY7C09269/79/89 CY7C09369/79/89 16K/32K/64K x16/18 CY7C09269/369) CY7C09279/379) CY7C09289/389) 35-micron 8/10/12ns IDT709269 IDT709279 014L 100-PIN | |
LXXXXXXXX
Abstract: TNC 24 mk 2 026R CY7C09569V tb136 A14L CY7C09579V
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OCR Scan |
CY7C09569V CY7C09579V 16K/32K FLEx36â CY7C09569V) CY7C09579V) 25-micron 100-MHz LXXXXXXXX TNC 24 mk 2 026R CY7C09569V tb136 A14L CY7C09579V | |
A15LC
Abstract: A14L A14LC A12LC CY7C09099V 751V
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OCR Scan |
CY7C09079V/89V/99V CY7C09179V/89V/99V 32K/64K/128K CY7C09079V/179V) CY7C09089V/189V) CY7C09099V/199V) 83-MHz 35-micron 1V9/12 A15LC A14L A14LC A12LC CY7C09099V 751V | |
wc52
Abstract: PL031
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OCR Scan |
188EM) Am186/188EM Am186/188EMLV wc52 PL031 | |
CY7C09099VContextual Info: fax id: 5210 PRELIMINARY CY7C09079V/89V/99V CY7C09179V/89V/99V 3.3V 32K/64K/128K x 8/9 Synch ronous Dual-Port Static RAM Features • True Dual-Ported mem ory cells which allow sim ulta neous access of the same memory location • 6 Flow-Through/Pipelined devices |
OCR Scan |
CY7C09079V/89V/99V CY7C09179V/89V/99V 32K/64K/128K 35-micron CY7C09079V/179V) CY7C09089V/189V) CY7C09099V/199V) CY7C09099V | |
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Contextual Info: . MMMtekaatr', _*-V 4* ." •Y >*'V WffffrtHHHIIIIttllMtv^ . ■i ¿Mtf .v^-vj CY7C09269/79/89 CY7C09369/79/89 P R E L IM IN A R Y 16K/32K/64K x16/18 Synchronous Dual Port Static RAM • Low operating power Features • True Dual-Ported memory cells which allow simulta |
OCR Scan |
CY7C09269/79/89 CY7C09369/79/89 16K/32K/64K x16/18 CY7C09269/369) CY7C09279/379) CY7C09289/389) 100-MHz 35-micron | |
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Contextual Info: CY7C09269V/79V/89V CY7C09369V/79V/89V PRELIMINARY 3.3V 16K/32K/64Kx 16/18 Synchronous Dual-Port Static RAM Features • True Dual-Ported memory cells which allow simulta neous access of the same memory location • 6 Flow-Through/Pipelined devices — 16K x 16/18 organization CY7C09269V/369V |
OCR Scan |
CY7C09269V/79V/89V CY7C09369V/79V/89V 16K/32K/64Kx CY7C09269V/369V) CY7C09279V/379V) CY7C09289V/389V) 83-MHz 35-micron 1V9/12 | |
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Contextual Info: CY7C09079/89/99 CY7C09179/89/99 PRELIMINARY 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM • High-speed clock to data access 6.5/7.5/9/12 ns max. Features • Low operating power • True Dual-Ported memory cells which allow simulta neous access of the same memory location |
OCR Scan |
CY7C09079/89/99 CY7C09179/89/99 32K/64K/128K CY7C09079/179) CY7C09089/189) CY7C09099/199) 100-M 35-micron | |
MC68HC16Z1
Abstract: M68HC16 MC68HC16Z2
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M68HC16ZEC20/D M68HC16 CPU16) MC68HC16Z1 MC68HC16Z1UM/AD) MC68HC16Z2 MC68HC16Z2UM/ADe | |
M68HC16
Abstract: MC68HC16Z1
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M68HC16ZEC25/D MC68HC16Z1 M68HC16 MC68HC16Z1 MC68HC16Z1UM/AD) | |
2600 corningContextual Info: CY7C09269V/79V/89V CY7C09369V/79V/89V “ tv * I PRELIMINARY 3.3V 16K/32K/64K x 16/18 Synchronous Dual-Port Static RAM • High-speed clock to data access 7.5^1V9/12 ns max. • 3.3V Low operating power Features • True Dual-Ported memory cells which allow sim ulta |
OCR Scan |
CY7C09269V/79V/89V CY7C09369V/79V/89V 16K/32K/64K CY7C09269V/369V) CY7C09279V/379V) CY7C09289V/389V) 83-MHz 35-micron 2600 corning | |
lms 100 airflow diagram
Abstract: CN8370 ebe switches str*68 CN8471A CN8472A CN8474A CN8478 M66EN 28478G
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CN8478/74A/72A/71A 28478-DSH-002-D 32-Channel 208-Pin 64-Channel 128-Channel 256-Channel lms 100 airflow diagram CN8370 ebe switches str*68 CN8471A CN8472A CN8474A CN8478 M66EN 28478G | |
LHADContextual Info: fax id: 5217 '•'■'■'■'■'■'■‘JJSt>iW.-. a S S K , : 'S^ì,„*$ & :*■ _ jg ? CY7C09269/79/89 CY7C09369/79/89 PRELIMINARY . "T 16K/32K/64K x16/18 Synchronous Dual Port Static RAM • Low operating power Features — Active= 200 mA typical |
OCR Scan |
CY7C09269/79/89 CY7C09369/79/89 16K/32K/64K x16/18 CY7C09269/369) CY7C09279/379) CY7C09289/389) 35-micron 8/10/12ns LHAD | |
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Contextual Info: fax id: 5211 CYPRESS CY7C09269V/79V/89V CY7C09369V/79V/89V PRELIMINARY 3.3V 16K/32K/64Kx 16/18 Synchronous Dual Port Static RAM Features • H ig h -s p e ed clo ck to d ata ac c e s s 10 /12ns m ax. • 3.3 V Low o p e ratin g p o w er • True D u al-P o rted m e m o ry cells w h ich allo w s im u lta |
OCR Scan |
CY7C09269V/79V/89V CY7C09369V/79V/89V 16K/32K/64Kx /12ns | |
CY7C09099VContextual Info: fax id: 5210 CYPRESS CY7C09079V/89V/99V CY7C09179V/89V/99V PRELIMINARY 3.3V 32K/64K/128K x 8/9 Synchronous Dual Port Static RAM Features • True Dual-Ported mem ory cells which allow sim ulta neous access of the same mem ory location • 6 Flow-Through/Pipelined devices |
OCR Scan |
CY7C09079V/89V/99V CY7C09179V/89V/99V 32K/64K/128K 35-micron CY7C09079V/179V) CY7C09089V/189V) CY7C09099V/199V) CY7C09099V | |
CY7C09389VContextual Info: CY7C09269V/79V/89V CY7C09369V/79V/89V PRELIMINARY * / CYPRESS 3.3V 16K/32K/64Kx 16/18 Synchronous Dual-Port Static RAM High-speed clock to data access 6.5l1’ 2]/7 .5^ /9/1 2 ns max. 3.3V low operating power Features • True Dual-Ported mem ory cells which allow sim ulta |
OCR Scan |
CY7C09269V/79V/89V CY7C09369V/79V/89V 16K/32K/64Kx CY7C09269V/369V) CY7C09279V/379V) CY7C09289V/389V) CY7C09389V | |
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Contextual Info: CYPRESS CY7C09269V/79V/89V CY7C09369V/79V/89V PRELIMINARY 3.3V 16K/32K/64Kx 16/18 Synchronous Dual-Port Static RAM • High-speed clock to data access 7.5^1V9/12 ns max. • 3.3V Low operating power Features • True Dual-Ported mem ory cells which allow sim ulta |
OCR Scan |
CY7C09269V/79V/89V CY7C09369V/79V/89V 16K/32K/64Kx 1V9/12 CY7C09269V/369V) CY7C09279V/379V) CY7C09289V/389V) | |
IC CS 3758 GP
Abstract: M68HC11 M68HC16 MC68HC16Z1 SPAKXC16Z1CFC16 SPAKXC16Z1CFC20 XC16Z1CFC16 XC16Z1CFC20 Nippon capacitors
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Original |
MC68HC16Z1TS/D MC68HC16Z1 16-Bit MC68HC16Z1 M68HC11 M68300/68HC16 M68HC16 IC CS 3758 GP M68HC11 SPAKXC16Z1CFC16 SPAKXC16Z1CFC20 XC16Z1CFC16 XC16Z1CFC20 Nippon capacitors | |
CY7C09099VContextual Info: P R E L IM IN A R Y CY7C09079V/89V/99V CY7C09179V/89V/99V 3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM Features • True Dual-Ported memory cells which allow simulta neous access of the same memory location • 6 Flow-Through/Pipelined devices |
OCR Scan |
CY7C09079V/89V/99V CY7C09179V/89V/99V 32K/64K/128K CY7C09079V/179V) CY7C09089V/189V) CY7C09099V/199V) 83-MHz 35-micron 1V9/12 CY7C09099V | |
0702C
Abstract: CY7C09099V
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OCR Scan |
CY7C09079V/89V/99V CY7C09179V/89V/99V 32K/64K/128K CY7C09079V/179V) CY7C09089V/189V) CY7C09099V/199V) 35-micron 0702C CY7C09099V | |
IC CS 3758 GP
Abstract: MC68HC16Z1 FF700 MC68HC16Z* CSBARBT M68HC11 M68HC16 SPAKXC16Z1CFC16 XC16Z1CFC16 XC16Z1CFC20 XC16Z1CFD25
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MC68HC16Z1TS/D MC68HC16Z1 16-Bit MC68HC16Z1 M68HC11 M68300/68HC16 M68HC16 IC CS 3758 GP FF700 MC68HC16Z* CSBARBT M68HC11 SPAKXC16Z1CFC16 XC16Z1CFC16 XC16Z1CFC20 XC16Z1CFD25 | |
MAC HCN
Abstract: 016l IDT709269 IDT709279 SL414 xeee
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OCR Scan |
CY7C09269A/79/89 CY7C09369A/79/89 16K/32K/64K x16/18 CY7C09269A/369A) CY7C09279/379) CY7C09289/389) 100-MHz 35-micron MAC HCN 016l IDT709269 IDT709279 SL414 xeee | |
CY7C09099V
Abstract: A10FL
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OCR Scan |
CY7C09079V/89V/99V CY7C09179V/89V/99V 32K/64K/128K 35-mlcron 100-pin CY7C09189V-1 CY7C09189V-12AC CY7C09189V-12AI CY7C09099V A10FL | |