OPA8512 Search Results
OPA8512 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
OPA8512HPContextual Info: OPA8512HP Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
Original |
OPA8512HP --------------------130um OPA8512HP | |
|
Contextual Info: OPA8512 Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
Original |
OPA8512 --------------------130um | |
|
Contextual Info: OPA8512CND Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
Original |
OPA8512CND --------------------110um | |
OPA8512Contextual Info: OPA8512 Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
Original |
OPA8512 --------------------130um OPA8512 | |
OPA8512CNDContextual Info: OPA8512CND Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
Original |
OPA8512CND --------------------110um OPA8512CND | |
|
Contextual Info: OPA8512HP Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
Original |
OPA8512HP --------------------130um | |
|
Contextual Info: OPA8512WDD Infrared LED Chip GaAlAs/GaAlAs High Speed 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
Original |
OPA8512WDD --------------------120um | |
OPA8512WDDContextual Info: OPA8512WDD Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage |
Original |
OPA8512WDD --------------------120um OPA8512WDD |